US4710786A
Expired / Lapsed
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Wide band gap semiconductor alloy material
Assignee: United Solar Systems Corp
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Filing: 1986-06-09
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Granted: 1987-12-01
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Expires: 2006-06-09
Abstract
Abstract A wide band amorphous semiconductor alloy including a host matrix of silicon and incorporating therein carbon or nitrogen and a plurality of different and complimentary density of states reducing elements.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Arun Madan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 08:59
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10D; H10D62/00; H10D62/40; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
55 words
An improved amorphous semiconductor alloy, said alloy including a host matrix of silicon and incorporating therein carbon or nitrogen and further incorporating therein a plurality of different and complimentary density of states reducing elements for forming a wide band gap silicon alloy having altered electronic configurations and without substantially increasing the states in the gap.
Claim 2
Dependent Claim
55 words
An improved amorphous semiconductor alloy, said alloy including a host matrix of silicon and incorporating therein carbon or nitrogen and further incorporating therein a plurality of different and complimentary density of states reducing elements for forming a wide band gap silicon alloy having altered electronic configurations and without substantially increasing the states in the gap.
Claim 3
Dependent Claim
17 words
The alloy in claim 1 wherein said alloy forms the active photoresponsive region of a photovoltaic cell.
Claim 4
Dependent Claim
66 words
The alloy as defined in claim 2 wherein said cell is formed by successively deposited layers of opposite (p and n) conductivity type; the n-type layer including an n-dopant element and the p-type layer ncluding a p-dopant; and a substantially intrinsic amorphous alloy layer deposited between the n-type and p-type layers, at least of a portion of said intrinsic layer containing said band gap increasing element.
Claim 5
Dependent Claim
27 words
The alloy as defined in claim 1 wherein a first density of states reducing element is fluorine and a second density of states reducing element is hydrogen.
Claim 6
Dependent Claim
20 words
The alloy as defined in claim 1 wherein said alloy includes an n-dopant element for forming an n-conductivity type layer.
Claim 7
Dependent Claim
22 words
The alloy as defined in claim 1 wherein said alloy includes a p-dopant element so as to form a p-conductivity type layer.
References Cited (Backward Citations)
US4409605A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-30 | 1991-06-01 | 1991-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-30 | 1995-06-01 | 1995-12-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-30 | 1999-06-01 | 1999-12-01 | $7700.00 | Window Closed / Lapsed |