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US5092957A
Expired / Lapsed
US
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Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching
Assignee: United States, ENERGY THE, Secretary of, Department of
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Filing: 1989-11-24
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Granted: 1992-03-03
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Expires: 2009-11-24
Abstract
Abstract The minority carrier lifetime is significantly much shorter in semiconductor materials with very high impurity concentrations than it is in semiconductor materials with lower impurity concentration levels. This phenomenon of reduced minority carrier lifetime in semiconductor materials having high impurity concentration is utilized to advantage for permitting highly selective semiconductor material etching to be achieved using a carrier-driven photochemical etching reaction. Various means may be employed for increasing the local impurity concentration level in specific near-surface regions of a semiconductor prior to subjecting the semiconductor material to a carrier-driven photochemical etching reaction. The regions having the localized increased impurity concentration form a self-aligned mask inhibiting photochemical etching at such localized regions while the adjacent regions not having increased impurity concentrations are selectively photochemically etched. Liquid- or gas-phase etching may be performed.
Inventors
- 👤 Carol I. H. Ashby
- 👤 David R. Myers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 12:53
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/20; H10P50/24; H10P50/242; H10P50/246; H10P50/646; H10P52/00; H10P95/00; H10P95/70
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
154 words
A process for selectively photochemically etching a semiconductor material, comprising: introducing at least one impurity into at least one selected region of a semiconductor material to be etched to increase a local impurity concentration in said at least one selected region relative to an impurity concentration in regions of said semiconductor material adjacent thereto, for reducing minority carrier lifetimes within said at least one selected region relative to said adjacent regions for thereby providing a photochemical etch-inhibiting mask at said at least one selected region; and etching said semiconductor material by subjecting the surface of said semiconductor material to a carrier-driven photochemical etching reaction for selectively etching said regions of said semiconductor material adjacent said at least one selected region having said increased impurity concentration; wherein said step of introducing at least one impurity is performed so as not to produce damage to said at least one selected region before any etching is performed.
Claim 2
Dependent Claim
154 words
A process for selectively photochemically etching a semiconductor material, comprising: introducing at least one impurity into at least one selected region of a semiconductor material to be etched to increase a local impurity concentration in said at least one selected region relative to an impurity concentration in regions of said semiconductor material adjacent thereto, for reducing minority carrier lifetimes within said at least one selected region relative to said adjacent regions for thereby providing a photochemical etch-inhibiting mask at said at least one selected region; and etching said semiconductor material by subjecting the surface of said semiconductor material to a carrier-driven photochemical etching reaction for selectively etching said regions of said semiconductor material adjacent said at least one selected region having said increased impurity concentration; wherein said step of introducing at least one impurity is performed so as not to produce damage to said at least one selected region before any etching is performed.
Claim 3
Dependent Claim
16 words
The process according to claim 1, wherein said carrier-driven photochemical etching reaction employs a liquid-phase etchant.
Claim 4
Dependent Claim
16 words
The process according to claim 1, wherein said carrier-driven photochemical etching reaction employs a gas-phase etchant.
Claim 5
Dependent Claim
34 words
The process according to claim 1, wherein the step of introducing said at least one impurity into said at least one selected region of said semiconductor material is performed by a thermal in-diffusion process.
Claim 6
Dependent Claim
47 words
The process according to claim 1, wherein the step of introducing said at least one impurity into said at least one selected region of said semiconductor material is performed by ion implantation of an impurity species followed by annealing to activate the impurity and remove implantation-induced effects.
Claim 7
Dependent Claim
46 words
The process according to claim 1, wherein the step of introducing said at least one impurity into said at least one selected region of said semiconductor material is performed by local selective growth of a heavily doped region at each said selected region of said semiconductor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-03-03 | 1995-09-02 | 1996-03-03 | $2000.00 | Window Closed / Lapsed |
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