US4599136A
Expired / Lapsed
US
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Method for preparation of semiconductor structures and devices which utilize polymeric dielectric materials
Assignee: International Business Machines Corp
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Filing: 1984-10-03
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Granted: 1986-07-08
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Expires: 2004-10-03
Abstract
Abstract A method of fabrication of semiconductor structures which utilize trenches filled with polymeric dielectric materials to isolate segments thereof is disclosed. Contamination of the polymeric dielectric during processing of structural segments is avoided by filling the trenches with disposable polymer through formation of conductive patterns upon the structure, with subsequent removal of the disposable polymer and replacement with the desired polymeric dielectric.
Inventors
- 👤 Constance J. Araps
- 👤 Steven M. Kandetzke
- 👤 Ellen L. Kutner
- 👤 Mark A. Takacs
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 13:01
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
63 words
A method of preparing a semiconductor structure wherein segments of conductive patterns are isolated by trenches filled with polymeric dielectric materials, comprising: (a) filling said trenches of said semiconductor structure with a removable polymeric underlay; (b) performing intermediary processing steps upon said semiconductor structure; (c) removing said polymeric underlay from said trenches; and (d) refilling said trenches with a permanent polymeric dielectric material.
Claim 2
Independent Claim
63 words
A method of preparing a semiconductor structure wherein segments of conductive patterns are isolated by trenches filled with polymeric dielectric materials, comprising: (a) filling said trenches of said semiconductor structure with a removable polymeric underlay; (b) performing intermediary processing steps upon said semiconductor structure; (c) removing said polymeric underlay from said trenches; and (d) refilling said trenches with a permanent polymeric dielectric material.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein said semiconductor structure segments comprise an integrated circuit, having circuit elements thereof contacted with said conductive pattern.
Claim 4
Dependent Claim
25 words
The method of claim 1 wherein said polymeric underlay comprises a material selected from the group consisting of polysulfone, polymethyl methacrylate, poly(α-methylstyrene) and diazoquinone-novolak compositions.
Claim 5
Dependent Claim
64 words
The method of claim 3 wherein the dielectric of step (d) is selected from the group consisting of polyimides and polymerizable oligomers wherein said oligomers are selected from the group consisting of polyamic acid, the corresponding amic ester, the corresponding isoimide, the corresponding imide and mixtures thereof, wherein the end groups of said polymerizable oligomers are end-capped with a vinyl or acetylinic end group.
Claim 6
Independent Claim
156 words
A method of preparing semiconductor structures which utilize trenches filled with polymeric dielectric materials to isolate segments thereof, comprising: (a) coating said semiconductor structures and concurrently filling said trenches thereof with a layer of a removable lift-off polymeric underlay; (b) forming a dry-etch barrier film over said polymeric underlay; (c) forming a mask/imaging layer over said barrier film, with said mask layer having a pattern of openings defining a desired conductive pattern; (d) sequentially dry etching through said openings of said mask, said barrier film, and said polymeric underlay to the surface of said semiconductor structure with concurrent substantially complete removal of said mask; (e) depositing a blanket layer of conductive material over any remaining mask/imaging layer, said barrier film and upon the exposed surfaces of said semiconductor structure; (f) removing said polymeric underlay from said semiconductor structure and said trenches; and (g) filling said trenches and concurrently coating said semiconductor structure with a dielectric composition.
Claim 7
Independent Claim
156 words
A method of preparing semiconductor structures which utilize trenches filled with polymeric dielectric materials to isolate segments thereof, comprising: (a) coating said semiconductor structures and concurrently filling said trenches thereof with a layer of a removable lift-off polymeric underlay; (b) forming a dry-etch barrier film over said polymeric underlay; (c) forming a mask/imaging layer over said barrier film, with said mask layer having a pattern of openings defining a desired conductive pattern; (d) sequentially dry etching through said openings of said mask, said barrier film, and said polymeric underlay to the surface of said semiconductor structure with concurrent substantially complete removal of said mask; (e) depositing a blanket layer of conductive material over any remaining mask/imaging layer, said barrier film and upon the exposed surfaces of said semiconductor structure; (f) removing said polymeric underlay from said semiconductor structure and said trenches; and (g) filling said trenches and concurrently coating said semiconductor structure with a dielectric composition.
Claim 8
Dependent Claim
42 words
The method of claim 5 including the additional step of: (h) planarizing said dielectric composition to a level even with the surface of said semiconductor structure surrounding said trenches and simultaneously exposing said conductive pattern upon other portions of said semiconductor structure.
Claim 9
Dependent Claim
75 words
The method of claim 6 including the additional steps of: (i) blanket coating said semiconductor structure and the conductive pattern thereon with silicon nitride film; (j) blanket coating said silicon nitride film with a layer of a silicon dioxide dielectric to a level above said conductive pattern; and (k) planarizing said silicon dioxide layer and said silicon nitride film by dry etching thereof to a level exposing the top surface portions of said conductive pattern.
Claim 10
Dependent Claim
27 words
The method of claim 6 including the additional step of: (i) baking the composite of step (h) at about 300° C. to eliminate moisture from the dielectric.
Claim 11
Dependent Claim
75 words
The method of claim 8 including the additional steps of: (j) blanket coating said semiconductor structure and the conductive pattern thereon with silicon nitride film; (k) blanket coating said silicon nitride film with a layer of a silicon dioxide dielectric to a level above said conductive pattern; and (l) planarizing said silicon dioxide layer and said silicon nitride film by dry etching thereof to a level exposing the top surface portion of said conductive pattern.
Claim 12
Dependent Claim
25 words
The method of claim 5 wherein said polymeric underlay comprises a material selected from the group consisting of polysulfone, polymethyl methacrylate, poly(α-methylstyrene) and diazoquinone-novolak compositions.
Claim 13
Dependent Claim
21 words
The method of claim 10 wherein said barrier film is selected from the group consisting of organosilicate glasses, hexamethyldisilizane and divinylstyrene.
Claim 14
Dependent Claim
64 words
The method of claim 11 wherein the dielectric of step (g) is selected from the group consisting of polyimides and polymerizable oligomers wherein said oligomers are selected from the group consisting of polyamic acid, the correspoding amic ester, the corresponding isoimide, the corresponding imide and mixtures thereof, wherein the end groups of said polymerizable oligomers are end-capped with a vinyl or acetylinic end group.
Claim 15
Independent Claim
159 words
A method of preparing semiconductor structures which utilize trenches filled with polymeric dielectric materials to isolate segments thereof, comprising: (a) coating said semiconductor structure and concurrently filling said trenches thereof with a layer of a removable lift-off polymeric underlay; (b) forming a mask/imaging layer over said polymeric underlay, with said mask layer having a pattern of openings defining a desired conductive pattern; (c) etching via said mask openings through said polymeric underlay to the surface of said semiconductor structure; (d) depositing a blanket layer of conductive material over said mask layer and on the exposed surfaces of said semiconductor structure; (e) removing said polymeric underlay from said semiconductor structure and said trenches; (f) filling said trenches and concurrently coating said semiconductor structure with a dielectric composition; and (g) planarizing said dielectric composition to a level even with the surface of said semiconductor structure surrounding said trenches and simultaneously exposing said conductive pattern upon other portions of said semiconductor structure.
Claim 16
Independent Claim
159 words
A method of preparing semiconductor structures which utilize trenches filled with polymeric dielectric materials to isolate segments thereof, comprising: (a) coating said semiconductor structure and concurrently filling said trenches thereof with a layer of a removable lift-off polymeric underlay; (b) forming a mask/imaging layer over said polymeric underlay, with said mask layer having a pattern of openings defining a desired conductive pattern; (c) etching via said mask openings through said polymeric underlay to the surface of said semiconductor structure; (d) depositing a blanket layer of conductive material over said mask layer and on the exposed surfaces of said semiconductor structure; (e) removing said polymeric underlay from said semiconductor structure and said trenches; (f) filling said trenches and concurrently coating said semiconductor structure with a dielectric composition; and (g) planarizing said dielectric composition to a level even with the surface of said semiconductor structure surrounding said trenches and simultaneously exposing said conductive pattern upon other portions of said semiconductor structure.
Claim 17
Dependent Claim
23 words
The method of claim 13 wherein said semiconductor structure segments comprise and integrated circuit, having circuit elements thereof contacted with said conductor pattern.
Claim 18
Dependent Claim
75 words
The method of claim 13 including the additional steps of: (h) blanket coating said semiconductor structure and the conductive pattern thereon with silicon nitride film; (i) blanket coating said silicon nitride film with a layer of a silicon dioxide dielectric to a level above said conductive pattern; and (j) planarizing said silicon dioxide layer and said silicon nitride film by dry etching thereof to a level exposing the top surface portion of said conductive pattern.
Claim 19
Dependent Claim
27 words
The method of claim 13 including the additional step of: (h) baking the composite of step (g) at about 300° C. to eliminate moisture from the dielectric.
Claim 20
Dependent Claim
75 words
The method of claim 16 including the additional steps of: (i) blanket coating said semiconductor structure and the conductive pattern thereon with silicon nitride film; (j) blanket coating said silicon nitride film with a layer of a silicon dioxide dielectric to a level above said conductive pattern; and (k) planarizing said silicon dioxide layer and said silicon nitride film by dry etching thereof to a level exposing the top surface portion of said conductive pattern.
Claim 21
Dependent Claim
25 words
The method of claim 13 wherein said polymeric underlay comprises a material selected from the group consisting of polysulfone, polymethyl methacrylate, poly(α-methylstyrene) and diazoquinone-novolak compositions.
Claim 22
Dependent Claim
65 words
The method of claim 18 wherein the dielectric of step (f) is selected from the group consisting of polyimides and polymerizable oligomers, wherein said oligomers are selected from the group consisting of polyamic acid, the corresponding amic ester, the corresponding isoimide, the corresponding imide and mixtures thereof, and wherein the end groups of said polymerizagle oligomers are end-capped with a vinyl or acetylinic end group.
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