US5091764A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a transparent electrode and amorphous semiconductor layers
Assignee: Kanegafuchi Chemical Industry Co Ltd
•
Filing: 1989-09-28
•
Granted: 1992-02-25
•
Expires: 2009-09-28
Abstract
Abstract A semiconductor device having a transparent electrode comprising SnO 2 , at least one semiconductor layer and a back electrode on a glass substrate wherein the dopant density of the transparent electrode is not more than 0.5 weight %, so that light absorption in the transparent electrode is lowered.
Inventors
- 👤 Keizo Asaoka
- 👤 Kazunori Tsuge
- 👤 Yoshihisa Tawada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 20:39
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10F71/00; H10F71/10; H10F71/103; H10F77/00; H10F77/20; H10F77/244; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
52 words
A semiconductor device comprising a glass substrate having formed thereon, in order, (a) a transparent electrode comprising a SnO 2 ; (b) amorphous semiconductor layers having at least one pin-junction or nip-junction; and (c) a back electrode, wherein the transparent electrode has a dopant density of not more than 0.5 weight %.
Claim 2
Dependent Claim
52 words
A semiconductor device comprising a glass substrate having formed thereon, in order, (a) a transparent electrode comprising a SnO 2 ; (b) amorphous semiconductor layers having at least one pin-junction or nip-junction; and (c) a back electrode, wherein the transparent electrode has a dopant density of not more than 0.5 weight %.
Claim 3
Dependent Claim
48 words
The semiconductor device of claim 1, wherein an amorphous semiconductor layer having an electric conductivity equal to and a dopant density higher than that of the semiconductor layer of said amorphous semiconductor layers which faces said transparent electrode is sandwiched between the transparent electrode and the semiconductor layers.
Claim 4
Dependent Claim
20 words
The semiconductor device of claim 1 or 2, wherein the semiconductor layer which faces the transparent electrode comprises a-SiC: H.
Claim 5
Dependent Claim
27 words
The semiconductor device of claim 1 or 2, wherein the transparent electrode is doped with a member selected from the group consisting of Al, Sb and F.
Claim 6
Dependent Claim
29 words
The semiconductor device of claim 1 or 2, wherein the glass substrate has a textured surface and the size of the relief is between 1,000 Å and 10,000 Å.
Claim 7
Dependent Claim
21 words
The semiconductor device of claim 1 or 2, wherein the transparent electrode has a thickness between 5,000 Å and 20,000 Å.
Claim 8
Dependent Claim
23 words
The semiconductor device of claim 1 or 2, wherein the transparent electrode has a sheet resistance of between 10 Ω/□ and 40 Ω/□.
References Cited (Backward Citations)
US4378460A
Cited
US4500743A
Cited
US4559552A
Cited
US4591892A
Cited
US4788582A
Cited
US4703337A
Cited
US4694116A
Cited
JPS6273782A
Cited
JPS6273783A
Cited
EP0221523A2
Cited
EP0234222A2
Cited
US4900370A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-24 | 1995-08-26 | 1996-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-24 | 1999-08-26 | 2000-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-24 | 2003-08-26 | 2004-02-25 | $7700.00 | Window Closed / Lapsed |