EP0221523A2
Expired / Lapsed
EP
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Semiconductor device
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1986-11-01
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Granted: —
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Expires: 2006-11-01
Abstract
Abstract A semiconductor device comprising a pin-type or nip-type amorphous-containing semiconductor layers; characterized in that (1) at least one interlayer made of semiconductor or insulator having higher electrical resistivity than a semiconductor which adjoins the interlayer is/are interposed between semiconductor layers or between a semiconductor and an electrode, (2) an amount of dopant in a p-type or n-type layer is least at a junction interface of p/i or n/i and increases gradually toward a junction interface of p/electrode or n/electrode, or (3) a p-type semiconductor layer being the same conductive type as the p-type semiconductor and having higher impurity density and/or an n-type semiconductor layer being the same conductive type as the n-type semiconductor layer and having higher impurity density is/are interposed between the p-type semiconductor layer and the electrode at the side of the p-type semiconductor layer and/or between the n-type semiconductor layer and the electrode at the side of the n-type semiconductor layer. According to the semiconductor device of the present invention (in the case of (1) or (2)), large Voc and electric current at a specific voltage can be obtained, further in the case of (3), photoelectric convertion effeciency can be improved.
Inventors
- 👤 Hideo Yamagishi
- 👤 Masataka Kondo
- 👤 Kunio Nishimura
- 👤 Akihiko Hiroe
- 👤 Keizou Asaoka
- 👤 Kazunori Tsuge
- 👤 Yoshihisa Tawada
- 👤 Minori Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 21:25
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
51 words
A semiconductor device comprising a pin-type or nip-type amorphous-containing semiconductor layers and at least two electrodes characterized in that at least one interlayer made of semiconductor or insulator having higher electrical resistivity than a semiconductor which adjoins the interlayer is/are interposed between semiconductor layers or between a semiconductor and an electrode.
Claim 2
Dependent Claim
51 words
A semiconductor device comprising a pin-type or nip-type amorphous-containing semiconductor layers and at least two electrodes characterized in that at least one interlayer made of semiconductor or insulator having higher electrical resistivity than a semiconductor which adjoins the interlayer is/are interposed between semiconductor layers or between a semiconductor and an electrode.
Claim 3
Dependent Claim
27 words
The device of Claim 1, wherein the interlayer is formed between a p-type semiconductor and an i-type semiconductor, and/or between an n-type semiconductors and an i-type semiconductor.
Claim 4
Dependent Claim
20 words
The device of Claim 1, wherein the interlayer is formed between a semiconductor of one conductivity type and an electrode.
Claim 5
Dependent Claim
54 words
The device of Claim 1, wherein the interlayer is a layer selected from the group consisting of Si 1-x C x :X:Y, Si 1-x N x :X:Y and Si 1-x O x :X:Y (wherein x satisfies the relationship of 0<x<1; X is H, Cℓ, F or Br; Y is H, Cℓ, F or Br).
Claim 6
Dependent Claim
21 words
The device of Claim 1, wherein the interlayer is Si 1-x C x :H (wherein x satisfies the relationship of 0<x<1).
Claim 7
Dependent Claim
21 words
The device of Claim 1, wherein at least one of the interlayers is formed to adjoin a p-type amorphous-containing semiconductor layer.
Claim 8
Dependent Claim
17 words
The device of Claim 1, wherein the interlayer is formed between p-type and i-type amorphous-containing semiconductor layers.
Claim 9
Independent Claim
21 words
The device of any one of Claims 1 to 7, wherein a thickness of the interlayer is 10 to 500 Å.
Claim 10
Dependent Claim
49 words
A semiconductor device comprising a pin-type or nip-type amorphous-containing semiconductor layer and at least two electrodes, characterized in that an amount of dopant in a p-type or n-type layer is minimized at a junction interface of p/i or n/i and increases gradually toward an interface of p/electrode or n/electrode.
Claim 11
Dependent Claim
49 words
A semiconductor device comprising a pin-type or nip-type amorphous-containing semiconductor layer and at least two electrodes, characterized in that an amount of dopant in a p-type or n-type layer is minimized at a junction interface of p/i or n/i and increases gradually toward an interface of p/electrode or n/electrode.
Claim 12
Dependent Claim
21 words
The device of Claim 9, wherein at least one of the p-type layer and n-type layer is a layer of a-SiC:H.
Claim 13
Dependent Claim
21 words
The device of Claim 9, wherein at least one of the p-type layer and n-type layer is a layer of a-Si:H.
Claim 14
Dependent Claim
41 words
The device of Claim 9, wherein an amount of dopant gradually increases toward the interface of p/electrode or n/electrode, in a portion of the p-type or n-type layer at least 20 Å thick from the junction interface of p/i or n/i.
Claim 15
Dependent Claim
41 words
The device of Claim 9, wherein an amount of dopant gradually increases toward the interface of p/electrode or n/electrode, in a portion of the p-type or n-type layer at least 100 Å thick from the junction interface of p/i or n/i.
Claim 16
Independent Claim
33 words
The device of any one of Claims 9, 10 and 11, wherein the dopant in the p-type layer is an element selected from the groups consisting of B, Aℓ, Ga, In and Tℓ.
Claim 17
Independent Claim
33 words
The device of any one Claims 9, 10 and 11, wherein the dopant in the n-type layer is an element selected from the group consisting of N, P, As, Sb, Te and Po.
Claim 18
Dependent Claim
50 words
A semiconductor device comprising a nip-type or pin-type amorphous-containing semiconductor layer and at least two electrodes; characterized in that at least one semiconductor layer (I) being the same conductivity type as the adjacent semiconductor (II) and having higher impurity density is/are interposed between the semiconductor layer (II) and an electrode.
Claim 19
Dependent Claim
50 words
A semiconductor device comprising a nip-type or pin-type amorphous-containing semiconductor layer and at least two electrodes; characterized in that at least one semiconductor layer (I) being the same conductivity type as the adjacent semiconductor (II) and having higher impurity density is/are interposed between the semiconductor layer (II) and an electrode.
Claim 20
Dependent Claim
13 words
the device of Claim 16, wherein the conductivity type is p-type and/or n-type.
Claim 21
Dependent Claim
17 words
The device of Claim 17, wherein thickness of the semiconductor layer (I) is 10 to 300 Å.
Claim 22
Dependent Claim
16 words
The device of Claim 15, wherein the p-type and/or n-type semiconductor layer (I) comprise/comprises an a-SiC:H.
Claim 23
Independent Claim
21 words
The device of any one of Claims 17 and 19, wherein the p-type and/or n-type semiconductor (I) layer comprise/comprises an a-Si.
Claim 24
Independent Claim
36 words
The device of any one of Claims 17 to 19, wherein an impurity density of the p-type and n-type semiconductor layer(s) (I) of high impurity density is two or more times that of semiconductor layer(s) (II).
Claim 25
Independent Claim
33 words
The device of any one of Claims 17 to 19, wherein an impurity density of the semiconductor layer(s) (I) of high impurity density is four or more times that of semiconductor layer(s) (II).
References Cited (Backward Citations)
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