Patent US5091336A successfully refreshed from Google Patents.
US5091336A
Expired / Lapsed
US
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Method of making a high breakdown active device structure with low series resistance
Assignee: Fairchild Semiconductor Corp
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Filing: 1990-10-03
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Granted: 1992-02-25
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Expires: 2010-10-03
Abstract
Abstract Series resistance in the low impurity portion of a high breakdown PN junction of a three or four layer device is reduced by providing an increased inpurity region at the junction of the same conductivity type as the low impurity portion and having an impurity profile such that the increased impurity region is depleted under reverse biasing before critical field is reached therein. The three layer devices include insulated gate field effect transistors and bipolar devices and the four layer device is a semiconductor controlled rectifier (SCR).
Inventors
- 👤 James D. Beasom
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 06:53
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D8/00; H10D8/411; H10D18/00; H10D18/251; H10D30/65; H10D30/662; H10D62/00; H10D62/10; H10D62/13; H10D62/137; H10D62/149; H10D62/151; H10D62/156; H10D62/157; H10D62/17; H10D62/192; H10D62/199; Y; Y10; Y10S; Y10S148/00; Y10S148/085; Y10S148/126; Y10S148/167
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
79 words
A method of forming a three layer device, comprising: introducing a first conductivity type impurities into a substrate of said first conductivity type to form a first region; introducing a second conductivity type impurities into said first region to form a second region in and totally separated from said substrate by said first region; and introducing first conductivity type impurities into said second region to form a third region totally separated from said first region by said second region.
Claim 2
Independent Claim
79 words
A method of forming a three layer device, comprising: introducing a first conductivity type impurities into a substrate of said first conductivity type to form a first region; introducing a second conductivity type impurities into said first region to form a second region in and totally separated from said substrate by said first region; and introducing first conductivity type impurities into said second region to form a third region totally separated from said first region by said second region.
Claim 3
Dependent Claim
27 words
A method according to claim 1, wherein said introducing step to form said second region is performed to form said second region centered within said first region.
Claim 4
Dependent Claim
30 words
A method according to claim 2, including forming a mask having at least one aperture and said introducing steps to form said first and second regions are through said aperture.
Claim 5
Dependent Claim
17 words
A method according to claim 1, wherein said first, second and third regions are formed as rings.
Claim 6
Dependent Claim
26 words
A method according to claim 1, including introducing a first conductivity type impurities into said substrate to form a fourth region spaced from said second region.
Claim 7
Dependent Claim
26 words
A method according to claim 5, wherein said introducing step to form said fourth region forms said fourth region spaced from said first and second regions.
Claim 8
Dependent Claim
20 words
A method according to claim 5, wherein said introducing step to form said third and fourth regions are performed simultaneously.
Claim 9
Dependent Claim
37 words
A method according to claim 1, including forming an insulative layer over portions of said second layer at the surface of said substrate between said first and third regions and forming a gate over said insulative layer.
Claim 10
Independent Claim
81 words
A method of forming a four layer device, comprising: introducing first conductivity type impurities in a substrate of said first conductivity type to form spaced first and second regions; introducing second conductivity type impurities into said first and second regions to form third and fourth regions separated from said substrate by said first and second regions respectively; and introducing first conductivity type impurities into said third region to form a fifth region separated from said first region by said third region.
Claim 11
Independent Claim
81 words
A method of forming a four layer device, comprising: introducing first conductivity type impurities in a substrate of said first conductivity type to form spaced first and second regions; introducing second conductivity type impurities into said first and second regions to form third and fourth regions separated from said substrate by said first and second regions respectively; and introducing first conductivity type impurities into said third region to form a fifth region separated from said first region by said third region.
Claim 12
Dependent Claim
33 words
A method according to claim 9, wherein said introducing step to form said third and fourth regions is performed to form said third and fourth regions centered with said first and second regions.
Claim 13
Dependent Claim
36 words
A method according to claim 10, including forming a mask with at least two apertures and said introducing steps to form said first and second regions and said third and fourth regions are through respective apertures.
Claim 14
Independent Claim
69 words
A method of forming a two layer device, comprising: introducing a first conductivity type impurities into a substrate of said first conductivity type to form a first region having an impurity concentration profile which will deplete under reverse biasing before critical field is reached in said first region; and introducing a second conductivity type impurities to form a second region totally separated from said substrate by said first region.
Claim 15
Independent Claim
69 words
A method of forming a two layer device, comprising: introducing a first conductivity type impurities into a substrate of said first conductivity type to form a first region having an impurity concentration profile which will deplete under reverse biasing before critical field is reached in said first region; and introducing a second conductivity type impurities to form a second region totally separated from said substrate by said first region.
Claim 16
Dependent Claim
27 words
A method according to claim 12, wherein said introducing step to form said second region is performed to form said second region centered within said first region.
Claim 17
Dependent Claim
30 words
A method according to claim 13, including forming a mask having a least one aperture and said introducing steps to form said first and second regions are through said aperture.
Claim 18
Independent Claim
89 words
A method of forming a three layer device, comprising: introducing a first conductivity type impurities into a substrate of said first conductivity type to form a first region having an impurity concentration profile which will deplete under reverse biasing before critical field is reached in said first region; introducing a second conductivity type impurities to form a second region totally separated from said substrate by said first region; and introducing first conductivity type impurities to form a third region totally separated from said first region by said second region.
Claim 19
Independent Claim
89 words
A method of forming a three layer device, comprising: introducing a first conductivity type impurities into a substrate of said first conductivity type to form a first region having an impurity concentration profile which will deplete under reverse biasing before critical field is reached in said first region; introducing a second conductivity type impurities to form a second region totally separated from said substrate by said first region; and introducing first conductivity type impurities to form a third region totally separated from said first region by said second region.
Claim 20
Independent Claim
89 words
A method of forming a four layer device, comprising: introducing first conductivity type impurities in a substrate of said first conductivity type to form spaced first and second regions having concentration profile which will deplete under reverse biasing before critical field is reached in said first region; introducing second conductivity type impurities to form third and fourth regions separated from said substrate by said first and second regions respectively; and introducing first conductivity type impurities to form a fifth region separated from said first region by said third region.
Claim 21
Independent Claim
89 words
A method of forming a four layer device, comprising: introducing first conductivity type impurities in a substrate of said first conductivity type to form spaced first and second regions having concentration profile which will deplete under reverse biasing before critical field is reached in said first region; introducing second conductivity type impurities to form third and fourth regions separated from said substrate by said first and second regions respectively; and introducing first conductivity type impurities to form a fifth region separated from said first region by said third region.
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