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US5086256A
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External resonance circuit type radio frequency quadrupole accelerator
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1989-11-20
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Granted: 1992-02-04
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Expires: 2009-11-20
Abstract
Abstract An Mev ion implantation apparatus which does not contaminate a sample substrate with heavy metal particles. The apparatus includes an external resonance circuit type RFQ accelerator incluidng undulated quadrupole electrodes and a separate radio frequency resonance circuit for generating a radio frequency high voltage to be supplied to the electrodes. The undulated quadrupole electrodes and at least a part of metallic supports for supporting the electrodes and voltage supplying lines are provided with a surface coating of silicon, silicon doped with an impurity such as boron, phosphorus, or arsenic, or a light element having a mass number of 28 or less, such as carbon.
Inventors
- 👤 Katsumi Tokiguchi
- 👤 Kensuke Amemiya
- 👤 Noriyuki Sakudo
- 👤 Takayoshi Seki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:38
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3171; H05; H05H; H05H7/00; H05H7/02
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
71 words
In an external resonance circuit type RFQ accelerator comprising undulated quadrupole electrodes and a separate radio frequency resonance circuit for generating a radio frequency high voltage to be supplied to said electrodes, the improvement wherein said undulated quadrupole electrodes and at least a part of metallic supports for supporting said electrodes and voltage supplying lines are provided with a surface coating of silicon or silicon doped with boron, phosphorus, or arsenic.
Claim 2
Dependent Claim
71 words
In an external resonance circuit type RFQ accelerator comprising undulated quadrupole electrodes and a separate radio frequency resonance circuit for generating a radio frequency high voltage to be supplied to said electrodes, the improvement wherein said undulated quadrupole electrodes and at least a part of metallic supports for supporting said electrodes and voltage supplying lines are provided with a surface coating of silicon or silicon doped with boron, phosphorus, or arsenic.
Claim 3
Dependent Claim
73 words
In an external resonance circuit type RFQ accelerator comprising undulated quadrupole electrodes and a separate radio frequency resonance circuit for generating a radio frequency high voltage to be supplied to said electrodes, the improvement wherein said undulated quadrupole electrodes and at least a part of metallic supports for supporting said electrodes and voltage supplying lines are provided with a surface coating of a light element having a mass number of 28 or less.
Claim 4
Dependent Claim
73 words
In an external resonance circuit type RFQ accelerator comprising undulated quadrupole electrodes and a separate radio frequency resonance circuit for generating a radio frequency high voltage to be supplied to said electrodes, the improvement wherein said undulated quadrupole electrodes and at least a part of metallic supports for supporting said electrodes and voltage supplying lines are provided with a surface coating of a light element having a mass number of 28 or less.
Claim 5
Dependent Claim
92 words
An external resonance circuit type RFQ accelerator comprising undulated quadrupole electrodes and a radio frequency resonance circuit for generating a radio frequency high voltage to be supplied to said electrodes, said quadrupole electrodes and said radio frequency circuit being contained in separate containers, the container containing said quadrupole electrodes being evacuated, wherein at least part of an internal surface of the evacuated container containing said quadrupole electrodes is provided with a surface coating of silicon, silicon doped with an impurity, or a light element having a mass number of 28 or less.
Claim 6
Dependent Claim
92 words
An external resonance circuit type RFQ accelerator comprising undulated quadrupole electrodes and a radio frequency resonance circuit for generating a radio frequency high voltage to be supplied to said electrodes, said quadrupole electrodes and said radio frequency circuit being contained in separate containers, the container containing said quadrupole electrodes being evacuated, wherein at least part of an internal surface of the evacuated container containing said quadrupole electrodes is provided with a surface coating of silicon, silicon doped with an impurity, or a light element having a mass number of 28 or less.
Claim 7
Dependent Claim
36 words
An ion implantation apparatus comprising an external resonance circuit type RFQ accelerator according to claim 1, 2, or 3 and an implantation chamber for implanting ions accelerated by said RFQ accelerator into a silicon semiconductor substrate.
Claim 8
Dependent Claim
36 words
An external resonance circuit type RFQ accelerator according to claim 1, further comprising a vacuum container for containing said quadrupole electrodes, and plasma coating deposition means connected to said vacuum container for providing said surface coating.
Claim 9
Dependent Claim
27 words
An external resonance circuit type RFQ accelerator according to claim 2 or 3, wherein said light element having a mass number of 28 or less is carbon.
Claim 10
Dependent Claim
48 words
In an external resonance circuit type RFQ accelerator comprising undulated quadrupole electrodes and a separate radio frequency resonance circuit for generating a radio frequency high voltage to be supplied to said electrodes, the improvement wherein said quadrupole electrodes are formed from silicon or silicon doped with an impurity.
Claim 11
Dependent Claim
48 words
In an external resonance circuit type RFQ accelerator comprising undulated quadrupole electrodes and a separate radio frequency resonance circuit for generating a radio frequency high voltage to be supplied to said electrodes, the improvement wherein said quadrupole electrodes are formed from silicon or silicon doped with an impurity.
Claim 12
Dependent Claim
21 words
An external resonance circuit type RFQ accelerator according to claim 3 or 5, wherein said impurity is boron, phosphorus, or arsenic.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-03 | 1995-08-05 | 1996-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-03 | 1999-08-05 | 2000-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-03 | 2003-08-05 | 2004-02-04 | $7700.00 | Window Closed / Lapsed |