Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
161 words
A method for making ohmic contacts between a semiconductor and a high Tc Cu-oxide material having superconducting capability, in which current can pass between the semiconductor and the Cu-oxide material without going through a degraded interface; said method comprising the steps: a) depositing a buffer layer which is essentially inert to Cu-oxide material on a first portion of a semiconductor substrate which comprises silicon, and depositing a high Tc Cu-oxide material having superconducting capability on said buffer layer, and depositing a first contact layer of gold on said Cu-oxide material, and depositing a second contact layer on a second portion of said semiconductor substrate, said second contact layer being of aluminum; and then b) depositing an interconnecting layer of at least one of gold, silver, aluminum, titanium, chromium, or a refractory metal silicide on said second contact layer and on at least a portion of said first contact layer, to electrically connect said second contact layer and said first contact layer.
Claim 2
Independent Claim
161 words
A method for making ohmic contacts between a semiconductor and a high Tc Cu-oxide material having superconducting capability, in which current can pass between the semiconductor and the Cu-oxide material without going through a degraded interface; said method comprising the steps: a) depositing a buffer layer which is essentially inert to Cu-oxide material on a first portion of a semiconductor substrate which comprises silicon, and depositing a high Tc Cu-oxide material having superconducting capability on said buffer layer, and depositing a first contact layer of gold on said Cu-oxide material, and depositing a second contact layer on a second portion of said semiconductor substrate, said second contact layer being of aluminum; and then b) depositing an interconnecting layer of at least one of gold, silver, aluminum, titanium, chromium, or a refractory metal silicide on said second contact layer and on at least a portion of said first contact layer, to electrically connect said second contact layer and said first contact layer.
Claim 3
Dependent Claim
13 words
The method of claim 1, wherein said buffer layer is of zirconium oxide.
Claim 4
Dependent Claim
25 words
The method of claim 1, wherein said second contact layer and said interconnecting layer are the same material and deposited in a single deposition step.
Claim 5
Dependent Claim
23 words
The method of claim 1, wherein the deposition occurs at up to 600° C., and the Cu-oxide comprises a rare earth Ba-Cu oxide.
Claim 6
Dependent Claim
22 words
The method of claim 1, where the Cu-oxide is YBa 2 Cu 3 O 7 , and the interconnection layer is aluminum.
Claim 7
Independent Claim
166 words
A method for making ohmic contacts between a semiconductor and a high Tc Cu-oxide material having superconducting capability, in which current can pass between the semiconductor and the Cu-oxide material without going through a degraded interface; said method comprising the steps: a) depositing a buffer layer which is essentially inert to Cu-oxide material on a first portion of a substrate, and depositing a high Tc Cu-oxide material having superconducting capability on said buffer layer, and depositing a first contact layer of gold on said Cu-oxide material, and depositing a semiconductor which comprises silicon on a second portion of said substrate, and depositing a second contact layer on said semiconductor, said second contact layer being of aluminum; and then b) depositing an interconnecting layer of at least one of gold, silver, aluminum, titanium, chromium, or a refractory metal silicide on said second contact layer and on at least a portion of said first contact layer, to electrically connect said second contact layer and said first contact layer.
Claim 8
Independent Claim
166 words
A method for making ohmic contacts between a semiconductor and a high Tc Cu-oxide material having superconducting capability, in which current can pass between the semiconductor and the Cu-oxide material without going through a degraded interface; said method comprising the steps: a) depositing a buffer layer which is essentially inert to Cu-oxide material on a first portion of a substrate, and depositing a high Tc Cu-oxide material having superconducting capability on said buffer layer, and depositing a first contact layer of gold on said Cu-oxide material, and depositing a semiconductor which comprises silicon on a second portion of said substrate, and depositing a second contact layer on said semiconductor, said second contact layer being of aluminum; and then b) depositing an interconnecting layer of at least one of gold, silver, aluminum, titanium, chromium, or a refractory metal silicide on said second contact layer and on at least a portion of said first contact layer, to electrically connect said second contact layer and said first contact layer.
Claim 9
Dependent Claim
13 words
The method of claim 6, wherein said buffer layer is of zirconium oxide.
Claim 10
Dependent Claim
25 words
The method of claim 6, wherein said second contact layer and said interconnecting layer are the same material and deposited in a single deposition step.
Claim 11
Dependent Claim
23 words
The method of claim 6, wherein the deposition occurs at up to 600° C., and the Cu-oxide comprises a rare earth Ba-Cu oxide.
Claim 12
Dependent Claim
22 words
The method of claim 6, where the Cu-oxide is YBa 2 Cu 3 O 7 , and the interconnection layer is aluminum.