US4959346A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Composite with Y-BA-CU-O superconductive film
Assignee: General Electric Co
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Filing: 1989-05-22
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Granted: 1990-09-25
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Expires: 2009-05-22
Abstract
Abstract A composite is produced comprised of Y--Ba--Cu--O superconductive film having a zero resistance transition temperature of at least about 38 K, a zirconium dioxide film and a substrate wherein the zirconium dioxide film is intermediate the superconductive film and the substrate.
Inventors
- 👤 Antonio Mogro-Campero
- 👤 Larry G. Turner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:39
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/087; H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0632; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10S428/922; Y10S428/9265; Y10S428/93; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/702; Y10S505/703; Y10S505/704
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
156 words
A composite consisting essentially of a crystalline superconductive film, a microscopically pore-free zirconium dioxide film and a substrate, said superconductive film having a composition represented by the formula YBa x Cu y O z where x ranges from about 1.7 to about 2.3, where y ranges from about 2.7 to about 3.3 and where z ranges from about 6.5 to about 7.0, said superconductive film having a zero resistance transition temperature of at least about 38 K and a thickness at least sufficient to be continuous ranging from about 0.3 micron to about 1 micron, said substrate being selected from the group consisting of monocrystalline elemental silicon, polycrystalline elemental silicon, oxidized monocrystalline elemental silicon, oxidized polycrystalline element silicon, amorphous silicon dioxide, monocrystalline aluminum oxide and polycrystalline aluminum oxide, said zirconium dioxide film being intermediate said superconductive film and said substrate, said zirconium dioxide film having a thickness ranging from about 2000 Angstroms to about 4000 Angstroms.
Claim 2
Dependent Claim
156 words
A composite consisting essentially of a crystalline superconductive film, a microscopically pore-free zirconium dioxide film and a substrate, said superconductive film having a composition represented by the formula YBa x Cu y O z where x ranges from about 1.7 to about 2.3, where y ranges from about 2.7 to about 3.3 and where z ranges from about 6.5 to about 7.0, said superconductive film having a zero resistance transition temperature of at least about 38 K and a thickness at least sufficient to be continuous ranging from about 0.3 micron to about 1 micron, said substrate being selected from the group consisting of monocrystalline elemental silicon, polycrystalline elemental silicon, oxidized monocrystalline elemental silicon, oxidized polycrystalline element silicon, amorphous silicon dioxide, monocrystalline aluminum oxide and polycrystalline aluminum oxide, said zirconium dioxide film being intermediate said superconductive film and said substrate, said zirconium dioxide film having a thickness ranging from about 2000 Angstroms to about 4000 Angstroms.
Claim 3
Dependent Claim
13 words
The composite according to claim 1 wherein said substrate is monocrystalline elemental silicon.
Claim 4
Dependent Claim
21 words
The composite according to claim 1 wherein said superconductive film contains fluorine ranging from about 1 to about 7 atomic %.
Claim 5
Dependent Claim
22 words
The composite according to claim 1 wherein said superconductive film has a thickness ranging from about 0.4 micron to about 0.5 micron.
Claim 6
Dependent Claim
21 words
The composite according to claim 1, wherein said substrate has a thickness ranging from about 300 microns to about 500 microns.
Claim 7
Dependent Claim
13 words
The composite according to claim 1, wherein said substrate is polycrystalline elemental silicon.
Claim 8
Dependent Claim
14 words
The composite according to claim 1, wherein said substrate is oxidized monocrystalline elemental silicon.
Claim 9
Dependent Claim
14 words
The composite according to claim 1, wherein said substrate is oxidized polycrystalline elemental silicon.
Claim 10
Dependent Claim
13 words
The composite according to claim 1, wherein said substrate is amorphous silicon dioxide.
Claim 11
Dependent Claim
13 words
The composite according to claim 1, wherein said substrate is monocrystalline aluminum oxide.
Claim 12
Dependent Claim
13 words
The composite according to claim 1, wherein said substrate is polycrystalline aluminum oxide.
Claim 13
Dependent Claim
157 words
A composite consisting essentially of a crystalline superconductive film, a microscopically pore-free zirconium dioxide film and a substrate, said superconductive film having a composition represented by the formula YBa x Cu y O z , where x ranges from about 1.9 to about 2.1, where y ranges from about 2.9 to about 3.1, and where z ranges from about 6.9 to about 7.0, said superconductive film having a zero resistance transition temperature of at least about 38 K and a thickness at least sufficient to be continuous ranging from about 0.4 micron to about 0.5 micron, said substrate being selected from the group consisting of monocrystalline elemental silicon, polycrystalline elemental silicon, oxidized monocrystalline element silicon, oxidized polycrystalline elemental silicon, amorphous silicon dioxide, monocrystalline aluminum oxide and polycrystalline aluminum oxide, said zirconium dioxide film being intermediate said superconductive film and said substrate, said zirconium dioxide film having a thickness ranging from about 2000 Angstroms to about 4000 Angstroms.
Claim 14
Dependent Claim
157 words
A composite consisting essentially of a crystalline superconductive film, a microscopically pore-free zirconium dioxide film and a substrate, said superconductive film having a composition represented by the formula YBa x Cu y O z , where x ranges from about 1.9 to about 2.1, where y ranges from about 2.9 to about 3.1, and where z ranges from about 6.9 to about 7.0, said superconductive film having a zero resistance transition temperature of at least about 38 K and a thickness at least sufficient to be continuous ranging from about 0.4 micron to about 0.5 micron, said substrate being selected from the group consisting of monocrystalline elemental silicon, polycrystalline elemental silicon, oxidized monocrystalline element silicon, oxidized polycrystalline elemental silicon, amorphous silicon dioxide, monocrystalline aluminum oxide and polycrystalline aluminum oxide, said zirconium dioxide film being intermediate said superconductive film and said substrate, said zirconium dioxide film having a thickness ranging from about 2000 Angstroms to about 4000 Angstroms.
Claim 15
Dependent Claim
13 words
The composite according to claim 12, wherein said substrate is monocrystalline elemental silicon.
Claim 16
Dependent Claim
21 words
The composite according to claim 12, wherein said superconductive film contains fluorine ranging from about 1 to about 7 atomic %.
Claim 17
Dependent Claim
21 words
The composite according to claim 12, wherein said substrate has a thickness ranging from about 300 microns to about 500 microns.
Claim 18
Dependent Claim
13 words
The composite according to claim 12, wherein said substrate is polycrystalline elemental silicon.
Claim 19
Dependent Claim
14 words
The composite according to claim 12, wherein said substrate is oxidized monocrystalline element silicon.
Claim 20
Dependent Claim
14 words
The composite according to claim 12, wherein said substrate is oxidized polycrystalline elemental silicon.
Claim 21
Dependent Claim
13 words
The composite according to claim 12, wherein said substrate is amorphous silicon dioxide.
Claim 22
Dependent Claim
13 words
The composite according to claim 12, wherein said substrate is monocrystalline aluminum oxide.
Claim 23
Dependent Claim
13 words
The composite according to claim 12, wherein said substrate is polycrystalline aluminum oxide.
References Cited (Backward Citations)
US4882312A
Cited
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