Patent US5084130A successfully refreshed from Google Patents.
US5084130A
Expired / Lapsed
US
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Method for depositing material on depressions
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1990-08-14
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Granted: 1992-01-28
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Expires: 2010-08-14
Abstract
Abstract An improved capacitor for a semiconductor memory, and method for depositing material on a substrate is shown. The material to be deposited is energized by irradiation with light in a chamber in which a CVD method is carried out. The energy induced by the irradiation remains in the molecules of the material even after the molecules have lain on the substrate. With the residual energy, the molecules can wander on the substrate even to a hidden surface. Due to this wandering, the deposition can be performed also on the inside of a deep cave.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Takashi Inujima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:26
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; C; C23; C23C; C23C16/00; C23C16/04; C23C16/045; C23C16/44; C23C16/48; C23C16/482; H10P; H10P34/00; H10P34/40; H10P34/42
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
63 words
A method of forming a depression structure of a semiconductor substrate including: forming a depression on a surface of said substrate; depositing at least one film on the surface of said substrate in order to completely fill said depression; and removing an upper portion of said film by isotropic etching in order to form a smoother surface of said film over said depression.
Claim 2
Independent Claim
63 words
A method of forming a depression structure of a semiconductor substrate including: forming a depression on a surface of said substrate; depositing at least one film on the surface of said substrate in order to completely fill said depression; and removing an upper portion of said film by isotropic etching in order to form a smoother surface of said film over said depression.
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein said depositing step is carried out by a CVD method using light irradiation.
Claim 4
Dependent Claim
13 words
The method of claim 1 wherein said film is a silicon oxide film.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein the depth of the depression is larger than the width thereof.
Claim 6
Dependent Claim
11 words
The method of claim 1 wherein said depression is a trench.
Claim 7
Dependent Claim
17 words
The method of claim 1 wherein the width of the depression is not more than 2.5 microns.
Claim 8
Dependent Claim
19 words
The method of claim 1 wherein a plurality of films are formed in order to completely fill the depression.
Claim 9
Independent Claim
69 words
A method of forming a depression structure of a semiconductor substrate including: forming a depression on a surface of said substrate; depositing at least one film on the surface of said substrate by a CVD method using light irradiation in order to completely fill said depression; and removing an upper portion of said film by etching in order to form a smoother surface of said film over said depression.
Claim 10
Independent Claim
69 words
A method of forming a depression structure of a semiconductor substrate including: forming a depression on a surface of said substrate; depositing at least one film on the surface of said substrate by a CVD method using light irradiation in order to completely fill said depression; and removing an upper portion of said film by etching in order to form a smoother surface of said film over said depression.
Claim 11
Dependent Claim
13 words
The method of claim 8 wherein said film is a silicon oxide film.
Claim 12
Dependent Claim
17 words
The method of claim 8 wherein the depth of the depression is larger than the width thereof.
Claim 13
Dependent Claim
11 words
The method of claim 8 wherein said etching is isotropic etching.
Claim 14
Dependent Claim
11 words
The method of claim 8 wherein said depression is a trench.
Claim 15
Dependent Claim
17 words
The method of claim 8 wherein the width of the depression is not more than 2.5 microns.
Claim 16
Dependent Claim
19 words
The method of claim 8 wherein a plurality of films are formed in order to completely fill the depression.
Claim 17
Independent Claim
84 words
A method of forming a depression structure of a semiconductor substrate including: forming a depression on a surface of said substrate; depositing at least one film on the surface of said substrate in order to completely fill said depression therewith; and removing an upper portion of said film by etching so that the remaining portion of said film is left on the surface of said substrate and has a smoother upper surface at a level higher than that of the surface of said substrate.
Claim 18
Independent Claim
84 words
A method of forming a depression structure of a semiconductor substrate including: forming a depression on a surface of said substrate; depositing at least one film on the surface of said substrate in order to completely fill said depression therewith; and removing an upper portion of said film by etching so that the remaining portion of said film is left on the surface of said substrate and has a smoother upper surface at a level higher than that of the surface of said substrate.
Claim 19
Dependent Claim
19 words
The method of claim 15 wherein said depositing step is carried out by a CVD method using light irradiation.
Claim 20
Dependent Claim
13 words
The method of claim 15 wherein said film is a silicon oxide film.
Claim 21
Dependent Claim
17 words
The method of claim 15 wherein the depth of the depression is larger than the width thereof.
Claim 22
Dependent Claim
11 words
The method of claim 15 wherein said etching is isotropic etching.
Claim 23
Dependent Claim
11 words
The method of claim 15 wherein said depression is a trench.
Claim 24
Dependent Claim
17 words
The method of claim 15 wherein the width of the depression is not more than 2.5 microns.
Claim 25
Dependent Claim
19 words
The method of claim 1 wherein a plurality of films are formed in order to completely fill the depression.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-27 | 1995-07-29 | 1996-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-27 | 1999-07-29 | 2000-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-27 | 2003-07-29 | 2004-01-28 | $7700.00 | Window Closed / Lapsed |