Method for forming a silicide film used in a semiconductor chip

Claim 1

A method for forming a silicide film on a conducting layer for a gate electrode of a MOSFET, the method comprising: providing a silicon substrate; forming an oxide layer for segment separation in a portion of the substrate; sequentially forming a gate oxide film, a first conducting layer of a doped silicon and a second conducting layer of an undoped silicon on the silicon substrate; forming a gate electrode by removing a portion of the second conducting layer, the first conducting layer and the gate oxide film by mask patterning process for gate electrode; depositing an oxide film over the entire surface of the structure; forming an oxide spacer by anisotropic etching of the oxide film at each side of the gate electrode; depositing a metal layer on the entire surface of the structure; and heating the metal layer thereby reacting the metal of the metal layer with the second conducting layer of undoped silicon, whereby a uniform silicide film is formed in the second conducting layer deposited on the first conducting layer for gate electrode of the MOSFET.

Claim 2

A method for forming a silicide film on a conducting layer for a gate electrode of a MOSFET, the method comprising: providing a silicon substrate; forming an oxide layer for segment separation in a portion of the substrate; sequentially forming a gate oxide film, a first conducting layer of a doped silicon and a second conducting layer of an undoped silicon on the silicon substrate; forming a gate electrode by removing a portion of the second conducting layer, the first conducting layer and the gate oxide film by mask patterning process for gate electrode; depositing an oxide film over the entire surface of the structure; forming an oxide spacer by anisotropic etching of the oxide film at each side of the gate electrode; depositing a metal layer on the entire surface of the structure; and heating the metal layer thereby reacting the metal of the metal layer with the second conducting layer of undoped silicon, whereby a uniform silicide film is formed in the second conducting layer deposited on the first conducting layer for gate electrode of the MOSFET.

Claim 6

A method for forming a silicide film on a conducting layer for a gate electrode of a MOSFET, the method comprising: providing a silicon substrate; forming an oxide layer for segment separation in a portion of the substrate; sequentially forming on the silicon substrate: a gate oxide film, a first conducting layer of a doped silicon, wherein the doped silicon is selected from the group consisting of: doped polysilicon and doped amorphous silicon, and a second conducting layer of an undoped silicon, wherein the undoped silicon is selected from the group consisting of: undoped polysilicon and undoped amorphous silicon; forming a gate electrode by removing a portion of the second conducting layer, the first conducting layer and the gate oxide film by mask patterning process for gate electrode; depositing an oxide film over the entire surface of the structure; forming an oxide spacer by anisotropic etching of the oxide film at each side of the gate electrode; depositing a metal layer on the entire surface of the structure wherein the metal layer is titanium; and heating the metal layer thereby reacting the metal of the metal layer with the second conducting layer formed with the undoped silicon, whereby a uniform silicide film is formed in the second conducting layer deposited on the first conducting layer for gate electrode of the MOSFET.

Claim 7

A method for forming a silicide film on a conducting layer for a gate electrode of a MOSFET, the method comprising: providing a silicon substrate; forming an oxide layer for segment separation in a portion of the substrate; sequentially forming on the silicon substrate: a gate oxide film, a first conducting layer of a doped silicon, wherein the doped silicon is selected from the group consisting of: doped polysilicon and doped amorphous silicon, and a second conducting layer of an undoped silicon, wherein the undoped silicon is selected from the group consisting of: undoped polysilicon and undoped amorphous silicon; forming a gate electrode by removing a portion of the second conducting layer, the first conducting layer and the gate oxide film by mask patterning process for gate electrode; depositing an oxide film over the entire surface of the structure; forming an oxide spacer by anisotropic etching of the oxide film at each side of the gate electrode; depositing a metal layer on the entire surface of the structure wherein the metal layer is titanium; and heating the metal layer thereby reacting the metal of the metal layer with the second conducting layer formed with the undoped silicon, whereby a uniform silicide film is formed in the second conducting layer deposited on the first conducting layer for gate electrode of the MOSFET.