US5001082A
Expired / Lapsed
US
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Self-aligned salicide process for forming semiconductor devices and devices formed thereby
Assignee: MCNC Research and Development Institute
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Filing: 1989-04-12
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Granted: 1991-03-19
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Expires: 2009-04-12
Abstract
Abstract A self-aligned salicide process produces small dimensioned semiconductor devices, for example metal oxide semiconductor (MOS) devices. An electrode is formed on the face of a semiconductor substrate, the electrode having a top and a sidewall and an insulating coating on the sidewall. Then a silicon layer and a refractory metal layer are formed on the face, top and sidewall, with one of the layers being continuous, and the other layer having a break on the sidewall. In a preferred embodiment the silicon layer is directionally applied, to form thick portions on the face and top and thin portion on the sidewall. The thin portion on the sidewall is removed and a metal layer is uniformly deposited. The substrate is heated to convert at least part of the silicon and metal layers to silicide. The silicide layer on the face is planar and does not consume the substrate at the face, allowing shallow source and drain regions to be formed.
Inventors
- 👤 Scott H. Goodwin-Johansson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:53
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0212; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; Y; Y10; Y10S; Y10S148/00; Y10S148/019; Y10S148/116
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
148 words
A method of forming a semiconductor device comprising the steps of: forming a field oxide region on a face of a semiconductor substrate, said field oxide region surrounding a predetermined area on said face, for isolating said predetermined area; forming an electrode on said predetermined area, said electrode having a top and a sidewall, and an insulating coating on said sidewall; forming a silicon layer on said field oxide region, on said predetermined area, on said top and on said sidewall, said silicon layer having a break on said sidewall; forming a continuous conductor layer on said silicon layer over said field oxide region, over said predetermined area, over said top and over said sidewall; and reacting at least part of said silicon layer and at least part of said conductor layer to form silicide on said predetermined area, on said top and on said field oxide region.
Claim 2
Independent Claim
148 words
A method of forming a semiconductor device comprising the steps of: forming a field oxide region on a face of a semiconductor substrate, said field oxide region surrounding a predetermined area on said face, for isolating said predetermined area; forming an electrode on said predetermined area, said electrode having a top and a sidewall, and an insulating coating on said sidewall; forming a silicon layer on said field oxide region, on said predetermined area, on said top and on said sidewall, said silicon layer having a break on said sidewall; forming a continuous conductor layer on said silicon layer over said field oxide region, over said predetermined area, over said top and over said sidewall; and reacting at least part of said silicon layer and at least part of said conductor layer to form silicide on said predetermined area, on said top and on said field oxide region.
Claim 3
Dependent Claim
63 words
The method of claim 1 wherein said step of forming a silicon layer comprises the steps of: directionally applying said silicon layer to said semiconductor substrate, to thereby form a thick silicon layer on said field oxide region, on said predetermined area and on said top, and a thin silicon layer on said sidewall; and, removing said thin silicon layer on said sidewall.
Claim 4
Independent Claim
31 words
The method of claim wherein the step of removing said thin silicon layer on said sidewall comprises the step of converting said thin silicon layer on said sidewall to silicon dioxide.
Claim 5
Independent Claim
148 words
A method of forming a semiconductor device comprising the steps of: forming a field oxide region on a face of a semiconductor substrate, said field oxide region surrounding a predetermined area on said face, for isolating said predetermined area; forming an electrode on said predetermined area, said electrode having a top and a sidewall, and an insulating coating on said sidewall; forming a continuous silicon layer on said field oxide region, on said predetermined area, on said top and on said sidewall; forming a conductor layer on said silicon layer over said field oxide region, over said predetermined area, over said top and over said sidewall, said conductor layer having a break on said sidewall; and reacting at least part of said silicon layer and at least part of said conductor layer to form silicide on said predetermined area, on said top and on said field oxide region.
Claim 6
Independent Claim
148 words
A method of forming a semiconductor device comprising the steps of: forming a field oxide region on a face of a semiconductor substrate, said field oxide region surrounding a predetermined area on said face, for isolating said predetermined area; forming an electrode on said predetermined area, said electrode having a top and a sidewall, and an insulating coating on said sidewall; forming a continuous silicon layer on said field oxide region, on said predetermined area, on said top and on said sidewall; forming a conductor layer on said silicon layer over said field oxide region, over said predetermined area, over said top and over said sidewall, said conductor layer having a break on said sidewall; and reacting at least part of said silicon layer and at least part of said conductor layer to form silicide on said predetermined area, on said top and on said field oxide region.
Claim 7
Dependent Claim
75 words
The method of claim 4 wherein said step of forming a conductor layer comprises the steps of: directionally applying said conductor layer to said silicon layer, to thereby form a thick conductor layer on said silicon layer over said field oxide region, over said predetermined area and over said top, and a thin conductor layer on said silicon layer over said sidewall; and, removing said thin conductor layer on said silicon layer over said sidewall.
Claim 8
Independent Claim
74 words
The method of claims 1 and 4 wherein the step of forming an electrode comprises the step of forming a field effect transistor gate electrode on said predetermined area, said gate electrode having a top and a sidewall and an insulating coating on said sidewall; and wherein said method further comprises the step of forming field effect transistor source and drain regions in said predetermined area, to thereby form a self-aligned field effect transistor.
Claim 9
Dependent Claim
35 words
The method of claim 6 wherein the step of forming field effect transistor source and drain regions in said face of said semiconductor substrate is performed prior to the step of forming said conductor layer.
Claim 10
Independent Claim
33 words
The method of claims 1 and 4 wherein said conductor layer comprises a refractory metal layer and wherein said silicon layer is selected from the group consisting of amorphous silicon and polycrystalline silicon.
Claim 11
Independent Claim
27 words
The method of claims 1 and 4 wherein said reacting step comprises the step of heating said semiconductor substrate at about 650° C. for about 20 minutes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-03-18 | 1994-09-17 | 1995-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-03-18 | 1998-09-17 | 1999-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-03-18 | 2002-09-17 | 2003-03-19 | $7700.00 | Window Closed / Lapsed |