US4458410A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming electrode of semiconductor device
Assignee: Hitachi Ltd
•
Filing: 1982-06-18
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Granted: 1984-07-10
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Expires: 2002-06-18
Abstract
Abstract After a silicon layer is selectively grown on that part of a silicon substrate surface on which an electrode is to be formed, the silicon layer is reacted with a refractory metal so as to form the electrode made of a metal silicide layer.
Inventors
- 👤 Shojiro Sugaki
- 👤 Masahiko Ogirima
- 👤 Naoki Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 17:21
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
153 words
A method of forming an electrode of a semiconductor device comprising the steps of: (1) depositing an insulating film onto a surface of a semiconductor substrate in a manner to expose that part of the surface on which the electrode is to be formed, (2) selectively growing a silicon layer on that part of the surface of said semiconductor substrate exposed after depositing of said insulating film, (3) depositing a refractory metal layer in a manner to cover at least said silicon layer, and (4) heating the resultant substrate to react silicon of said silicon layer and refractory metal of said refractory metal layer and to form a metal silicide layer, said metal silicide layer extending to a remaining portion of said silicon layer, which remaining portion remains after forming of the metal silicide layer, whereby the remaining portion of the silicon layer extends between the semiconductor substrate and the metal silicide layer.
Claim 2
Independent Claim
153 words
A method of forming an electrode of a semiconductor device comprising the steps of: (1) depositing an insulating film onto a surface of a semiconductor substrate in a manner to expose that part of the surface on which the electrode is to be formed, (2) selectively growing a silicon layer on that part of the surface of said semiconductor substrate exposed after depositing of said insulating film, (3) depositing a refractory metal layer in a manner to cover at least said silicon layer, and (4) heating the resultant substrate to react silicon of said silicon layer and refractory metal of said refractory metal layer and to form a metal silicide layer, said metal silicide layer extending to a remaining portion of said silicon layer, which remaining portion remains after forming of the metal silicide layer, whereby the remaining portion of the silicon layer extends between the semiconductor substrate and the metal silicide layer.
Claim 3
Dependent Claim
59 words
A method of forming an electrode of a semiconductor device as defined in claim 1, wherein after the step (4), the following steps (5) and (6) are performed: (5) removing an unreacted part of said refractory metal layer, and exposing a surface of said metal silicide layer, and (6) forming a wiring layer connected with said metal silicide layer.
Claim 4
Dependent Claim
45 words
A method of forming an electrode of a semiconductor device as defined in claim 1, wherein after the step (4), the following step (5') is performed: (5') removing a desired part of an unreacted part of said refractory metal layer, and forming a wiring layer.
Claim 5
Dependent Claim
42 words
A method of forming an electrode of a semiconductor device as defined in claim 1, 2 or 3, wherein said silicon layer is selected from the group consisting of a Si epitaxial layer, a polycrystalline Si layer and an amorphous Si layer.
Claim 6
Dependent Claim
38 words
A method of forming an electrode of a semiconductor device as defined in claim 1, 2 or 3, wherein the refractory metal is at least one member selected from the group consisting of Mo, Ta, Ti and W.
Claim 7
Dependent Claim
35 words
A method of forming an electrode of a semiconductor device as defined in claim 4, wherein the refractory metal is at least one member selected from the group consisting of Mo, Ta, Ti and W.
Claim 8
Dependent Claim
43 words
A method of forming an electrode of a semiconductor device as defined in claim 1, 2 or 3, wherein said part of the surface on which the electrode is to be formed is the surface of an impurity-doped layer in said semiconductor substrate.
Claim 9
Dependent Claim
26 words
A method of forming an electrode of a semiconductor device as claimed in claim 7, wherein said impurity-doped layer forms a pn-junction with said semiconductor substrate.
Claim 10
Dependent Claim
44 words
A method of forming an electrode of a semiconductor device as defined in claim 1, 2 or 3, wherein the silicon layer selectively grown on the exposed surface of the semiconductor substrate has a thickness greater than the thickness of said metal silicide layer.
Claim 11
Dependent Claim
38 words
A method of forming an electrode of a semiconductor device as defined in claim 1, 2 or 3, wherein said heating the resulting substrate is performed at a temperature of at least 500° C. in a non-oxidizing atmosphere.
Claim 12
Dependent Claim
27 words
A method of forming an electrode of a semiconductor device as defined in claim 10, wherein said heating is performed at a temperature of 500° C.-1000° C.
Claim 13
Dependent Claim
41 words
A method of forming an electrode of a semiconductor device as defined in claim 1, 2 or 3, wherein said silicon layer is selectively grown substantially only on the surface of said semiconductor substrate exposed after said depositing an insulating film.
Claim 14
Independent Claim
143 words
A method of forming an electrode of a semiconductor device comprising the steps of: (1) depositing an insulating film onto a surface of a semiconductor substrate in a manner to expose that part of the surface on which the electrode is to be formed, (2) selectively growing a silicon layer on that part of the surface of said semiconductor substrate exposed after depositing of said insulating film, (3) depositing a refractory metal layer in a manner to cover at least said silicon layer, and (4) heating the resultant substrate to react silicon of said silicon layer and refractory metal of said refractory metal layer and to form a metal silicide layer, said metal silicide layer extending, in the direction of the substrate surface, at most to the surface of the semiconductor substrate, whereby the metal silicide layer does not penetrate the semiconductor substrate.
Claim 15
Independent Claim
143 words
A method of forming an electrode of a semiconductor device comprising the steps of: (1) depositing an insulating film onto a surface of a semiconductor substrate in a manner to expose that part of the surface on which the electrode is to be formed, (2) selectively growing a silicon layer on that part of the surface of said semiconductor substrate exposed after depositing of said insulating film, (3) depositing a refractory metal layer in a manner to cover at least said silicon layer, and (4) heating the resultant substrate to react silicon of said silicon layer and refractory metal of said refractory metal layer and to form a metal silicide layer, said metal silicide layer extending, in the direction of the substrate surface, at most to the surface of the semiconductor substrate, whereby the metal silicide layer does not penetrate the semiconductor substrate.
Claim 16
Dependent Claim
36 words
A method of forming an electrode of a semiconductor device as defined in claim 13, wherein, in said heating step, said metal silicide layer is formed to extend substantially to the surface of the semiconductor substrate.
Claim 17
Independent Claim
61 words
A method of forming an electrode of a semiconductor device as claimed in claims 13 or 14, wherein after the step (4), the following steps (5) and (6) are performed: (5) removing an unreacted part of said refractory metal layer, and exposing a surface of said metal silicide layer, and (6) forming a wiring layer connected with said metal silicide layer.
Claim 18
Dependent Claim
47 words
A method of forming an electrode of a semiconductor device as defined in claim 13 or 14, wherein after the step (4), the following step (5') is performed: (5') removing a desired part of an unreacted part of said refractory metal layer, and forming a wiring layer.
Claim 19
Dependent Claim
41 words
A method of forming an electrode of a semiconductor device as claimed in claim 13 or 14, wherein said silicon layer is selected from the group consisting of a Si epitaxial layer, a polycrystalline Si layer and an amorphous Si layer.
Claim 20
Dependent Claim
35 words
A method of forming an electrode of a semiconductor device as defined in claim 17, wherein the refractory metal is at least one member selected from the group consisting of Mo, Ta, Ti and W.
Claim 21
Dependent Claim
37 words
A method of forming an electrode of a semiconductor device as defined in claim 13 or 14, wherein the refractory metal is at least one member selected from the group consisting of Mo, Ta, Ti and W.
Claim 22
Dependent Claim
42 words
A method of forming an electrode of a semiconductor device as defined in claim 13 or 14, wherein said part of the surface on which the electrode is to be formed is the surface of an impurity-doped layer in said semiconductor substrate.
Claim 23
Dependent Claim
26 words
A method of forming an electrode of a semiconductor device as claimed in claim 20, wherein said impurity-doped layer forms a pn-junction with said semiconductor substrate.
Claim 24
Dependent Claim
40 words
A method of forming an electrode of a semiconductor device as defined in claim 13 or 14, wherein said silicon layer is selectively grown substantially only on the surface of said semiconductor substrate exposed after said depositing an insulating film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-10 | 1988-01-09 | 1988-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-10 | 1992-01-09 | 1992-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-10 | 1996-01-09 | 1996-07-10 | $7700.00 | Window Closed / Lapsed |