Patent US5080730A successfully refreshed from Google Patents.
US5080730A
Expired / Lapsed
US
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Implantation profile control with surface sputtering
Assignee: Ibis Technology Corp
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Filing: 1989-04-24
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Granted: 1992-01-14
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Expires: 2009-04-24
Abstract
Abstract An ion implantation process for producing a buried insulating layer of silicon dioxide in a silicon substrate which takes advantage of the effects of surface erosion and sputtering inherent to the ion implantation process. The process allows the production of an insulating layer buried within a silicon semiconductor wherein the width of the insulating layer can be contoured by controlling the beam energy during implantation.
Inventors
- 👤 Andrew B. Wittkower
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:29
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/208; H10P30/209; H10P30/22; Y; Y10; Y10S; Y10S148/00; Y10S148/158
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
77 words
A process for producing a buried insulation forming implant layer disposed within a silicon substrate, comprising the steps of: implanting ions into a silicon substrate, from a source of controllable ion energy; simultaneously eroding a surface layer of said silicon substrate through which said implanting ions pass; and reducing the ion energy in compensation for erosion occurring in said eroding step to reduce the depth of ion penetration with respect to the surface erosion of said substrate.
Claim 2
Dependent Claim
77 words
A process for producing a buried insulation forming implant layer disposed within a silicon substrate, comprising the steps of: implanting ions into a silicon substrate, from a source of controllable ion energy; simultaneously eroding a surface layer of said silicon substrate through which said implanting ions pass; and reducing the ion energy in compensation for erosion occurring in said eroding step to reduce the depth of ion penetration with respect to the surface erosion of said substrate.
Claim 3
Dependent Claim
12 words
The process of claim 1 wherein the silicon is of semiconductor grade.
Claim 4
Dependent Claim
17 words
The process of claim 1 wherein the implant is selected from the group comprising oxygen and nitrogen.
Claim 5
Dependent Claim
23 words
The process of claim 1 further including the step of annealing said substrate to create a continuous insulating layer from the implant layer.
Claim 6
Dependent Claim
77 words
A process for producing a buried insulation forming implant layer disposed with a silicon substrate, comprising the steps of: implanting ions into a silicon substrate from a source of controllable ion energy; simultaneously eroding a surface layer of said silicon substrate through which said implanting ions pass; and increasing the ion energy in compensation for erosion occurring in said eroding step to increase the depth of ion penetration with respect to the surface erosion of said substrate.
Claim 7
Dependent Claim
77 words
A process for producing a buried insulation forming implant layer disposed with a silicon substrate, comprising the steps of: implanting ions into a silicon substrate from a source of controllable ion energy; simultaneously eroding a surface layer of said silicon substrate through which said implanting ions pass; and increasing the ion energy in compensation for erosion occurring in said eroding step to increase the depth of ion penetration with respect to the surface erosion of said substrate.
Claim 8
Dependent Claim
11 words
The process of claim 5 wherein the silicon is semiconductor grade.
Claim 9
Dependent Claim
18 words
The process of claim 5 wherein the implant is selected from the group consisting of oxygen and nitrogen.
Claim 10
Dependent Claim
24 words
The process of claim 5 which further includes the steps of annealing said substrate to create a continuous insulating layer from the implant layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-13 | 1995-07-15 | 1996-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-13 | 1999-07-15 | 2000-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-13 | 2003-07-15 | 2004-01-14 | $7700.00 | Window Closed / Lapsed |