US4394180A
Expired / Lapsed
US
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Method of forming high resistivity regions in GaAs by deuteron implantation
Assignee: Ricardo AEA Ltd
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Filing: 1980-06-12
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Granted: 1983-07-19
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Expires: 2000-06-12
Abstract
Abstract A process for producing regions of high resistivity in gallium arsenide, and other related compounds and mixed crystals which show electrical behavior which is similar to that of gallium arsenide, in which deuterons are implanted into a substrate made of the semi-conductor body with energies up to a maximum value corresponding to a desired depth of penetration into the body. Apparatus for carrying out the process also is described.
Inventors
- 👤 Geoffrey Dearnaley
- 👤 Kenneth Steeples
- 👤 Ian J. Saunders
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 03:24
CPC Classifications
A; A24; A24C; A24C1/00; A24C1/04; Y; Y10; Y10S; Y10S148/00; Y10S148/084
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
70 words
A process for producing a semi-conductor device having regions of high resistivity in a semi-conductor substrate body comprising gallium arsenide or other related compounds and mixed crystals which show similar electrical behavior to gallium arsenide, comprising the sole operation of implanting deuterons only into the said regions of the substrate body with energies only up to a maximum value corresponding to a desired depth of penetration into the substrate body.
Claim 2
Dependent Claim
70 words
A process for producing a semi-conductor device having regions of high resistivity in a semi-conductor substrate body comprising gallium arsenide or other related compounds and mixed crystals which show similar electrical behavior to gallium arsenide, comprising the sole operation of implanting deuterons only into the said regions of the substrate body with energies only up to a maximum value corresponding to a desired depth of penetration into the substrate body.
Claim 3
Dependent Claim
12 words
A method according to claim 1 wherein the substrate is gallium arsenide.
Claim 4
Dependent Claim
29 words
A method according to claim 1 wherein the deuterons are implanted in the form of a beam, the beam current of which is 0.2 μA per cm 2 .
Claim 5
Dependent Claim
14 words
A method according to claim 1 wherein the areas adjacent said regions are masked.
Claim 6
Dependent Claim
28 words
A method according to claim 2 wherein the number of deuterons implanted in the substrate is in the range 10 12 to 10 16 per cm 2 .
Claim 7
Dependent Claim
26 words
A method according to claim 2 wherein the gallium arsenide is doped initially so as to have a resistivity of the order of 10 -2 Ωcm.
Claim 8
Dependent Claim
28 words
A method according to claim 3 wherein a total deuteron dose of 10 15 per cm 2 is implanted with energies in the range 0.1 to 1.0 MeV.
Claim 9
Dependent Claim
29 words
A method according to claim 3 wherein the deuteron dose is between 10 13 and 10 14 per cm 2 and the deuterons are implanted with a single energy.
Claim 10
Dependent Claim
17 words
A method according to claim 4 wherein the deuteron energies vary continuously from 0.1 to 1.0 MeV.
References Cited (Backward Citations)
US3961989A
Cited
US4290825A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-07-18 | 1987-01-17 | 1987-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-07-18 | 1991-01-17 | 1991-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-07-18 | 1995-01-17 | 1995-07-19 | $7700.00 | Window Closed / Lapsed |