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US3961989A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of making impatt diode and resulting diode

Assignee: Post Office
•
Filing: 1975-02-04
•
Granted: 1976-06-08
•
Expires: 1995-02-04
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Abstract

Abstract An IMPATT diode is manufactured by doping a silicon n-type epitaxial layer and bombarding the doped layer with ions, preferably protons.

Inventors

  • 👤 Christopher John Heslop

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 19:09
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10D; H10D99/00; H10P95/00

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 45 words
A method of making an IMPATT diode comprising the steps of: a. doping an n-type epitaxial layer of silicon grown on an n + -type silicon substance with boron; and then b. bombarding said layer with ions while maintaining its temperature between 590°C and 610°C.
Claim 2
Independent Claim 45 words
A method of making an IMPATT diode comprising the steps of: a. doping an n-type epitaxial layer of silicon grown on an n + -type silicon substance with boron; and then b. bombarding said layer with ions while maintaining its temperature between 590°C and 610°C.
Claim 3
Dependent Claim 12 words
A method as claimed in claim 1 wherein said ions are protons.
Claim 4
Dependent Claim 22 words
A method as claimed in claim 2 wherein said protons penetrate said epitaxial layer to a depth of 0.1 - 0.15 microns.
Claim 5
Dependent Claim 33 words
A method as claimed in claim 2 wherein said epitaxial layer receives a total proton dose of 40-65 micro coulombs cm - 2 at a beam current of 0.09 - 0.11 micro amps.
Claim 6
Dependent Claim 19 words
A method as claimed in claim 1 wherein boron is implanted into said n-type epitaxial layer by ion implantation.
Claim 7
Dependent Claim 11 words
An IMPATT diode made by the method claimed in claim 1.

References Cited (Backward Citations)

US3509428A Cited
US3595716A Cited
US3730778A Cited
US3756862A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1979-06-08 1979-12-08 1980-06-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1983-06-08 1983-12-08 1984-06-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1987-06-08 1987-12-08 1988-06-08 $7700.00 Window Closed / Lapsed

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