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US5079616A
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Semiconductor structure
Assignee: Verizon Laboratories Inc
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Filing: 1988-02-11
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Granted: 1992-01-07
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Expires: 2008-02-11
Abstract
Abstract Heteroepitaxial semiconductor structures of, for example, GaAs on InP or Si. The epitaxially grown GaAs is in the form of individual spaced-apart islands having maximum dimensions in the plane of the surface of the substrate of no greater than 10 micrometers. In islands of this size stress in the plane of the epitaxially grown layers due to mismatch of the coefficients of thermal expansion of the substrate and epitaxially grown materials is insignificant.
Inventors
- 👤 Ben G. Yacobi
- 👤 Stanley Zemon
- 👤 Chirravuri Jagannath
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:12
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/127; H10F71/1276; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2215; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2909; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/646; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S438/00; Y10S438/933; Y10S438/938
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
133 words
A semiconductor structure comprising a substrate of essentially single crystal insulating or semiconducting material having a flat, planar surface; an epitaxial layer of single crystal semiconductor material on said surface of the substrate, said semiconductor material having a different coefficient of thermal expansion from that of the substrate material; said epitaxial layer consisting of an array of individual islands of single crystal semiconductor material spaced from each other, each island having a flat, planar upper surface; and the flat, planar upper surfaces of said islands lying in a common plane substantially parallel to said surface of the substrate; each of said islands having edge surfaces extending from the upper surface to the surface of the substrate; and the maximum distance between edge surfaces of each island being no greater than about 10 micrometers.
Claim 2
Dependent Claim
133 words
A semiconductor structure comprising a substrate of essentially single crystal insulating or semiconducting material having a flat, planar surface; an epitaxial layer of single crystal semiconductor material on said surface of the substrate, said semiconductor material having a different coefficient of thermal expansion from that of the substrate material; said epitaxial layer consisting of an array of individual islands of single crystal semiconductor material spaced from each other, each island having a flat, planar upper surface; and the flat, planar upper surfaces of said islands lying in a common plane substantially parallel to said surface of the substrate; each of said islands having edge surfaces extending from the upper surface to the surface of the substrate; and the maximum distance between edge surfaces of each island being no greater than about 10 micrometers.
Claim 3
Dependent Claim
18 words
A semiconductor structure in accordance with claim 1 wherein the spacing between individual islands is about 1 micrometer.
Claim 4
Dependent Claim
15 words
A semiconductor structure in accordance with claim 2 wherein each of the islands is square.
Claim 5
Dependent Claim
22 words
A semiconductor structure in accordance with claim 3 wherein each of said islands is between about 2 to about 5 micrometers thick.
Claim 6
Dependent Claim
30 words
A semiconductor structure in accordance with claim 4 wherein the material of said substrate is silicon or sapphire; and the semiconductor material of said islands is a compound semiconductor material.
Claim 7
Dependent Claim
25 words
A semiconductor structure in accordance with claim 4 wherein the material of said substrate is InP; and the semiconductor material of said islands includes GaAs.
Claim 8
Dependent Claim
23 words
A semiconductor structure in accordance with claim 4 wherein each of said islands contains the elements of a semiconductor electronic or opto-electronic device.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-01-06 | 1995-07-08 | 1996-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-06 | 1999-07-08 | 2000-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-06 | 2003-07-08 | 2004-01-07 | $7700.00 | Window Closed / Lapsed |