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US5072263A Expired / Lapsed US ⏱️ 0.0 years remaining

Thin film el device with protective film

Assignee: Komatsu Ltd
•
Filing: 1991-05-14
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Granted: 1991-12-10
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Expires: 2011-05-14
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Abstract

Abstract A thin-film EL device of which the surface is coated with a protective film of a two-layer structure consisting of an insulating film (10) and a metallic film (20) in order to obtain good air-tightness and high reliability. The insulating film (10) consists of any one of a silicon oxide film, a silicon nitride film, an aluminum oxide film or a tantalum oxide film, and the metallic film consists of a thin film of either aluminum or tantalum.

Inventors

  • 👤 Takehito Watanabe
  • 👤 Satoshi Tanda
  • 👤 Takashi Nire

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 11:26
CPC Classifications
H; H05; H05B; H05B33/00; H05B33/12; H05B33/22; H05B33/02; H05B33/04

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 102 words
A thin-film EL device having a double dielectric structure comprising a light-transmitting substrate, a light-transmitting electrode formed on said substrate, a first dielectric layer formed on said electrode, a single electroluminescent layer as a light emission layer formed on said first dielectric layer, a second dielectric layer formed on said light emission layer, an electrode for applying a voltage to said light emission layer formed on said second dielectric layer, and a protective film having a two-layer structure for electric insulation and low water permeability composed of an insulating film and a metal film formed over surfaces of said thin-film EL device.
Claim 2
Dependent Claim 102 words
A thin-film EL device having a double dielectric structure comprising a light-transmitting substrate, a light-transmitting electrode formed on said substrate, a first dielectric layer formed on said electrode, a single electroluminescent layer as a light emission layer formed on said first dielectric layer, a second dielectric layer formed on said light emission layer, an electrode for applying a voltage to said light emission layer formed on said second dielectric layer, and a protective film having a two-layer structure for electric insulation and low water permeability composed of an insulating film and a metal film formed over surfaces of said thin-film EL device.
Claim 3
Dependent Claim 34 words
A thin-film EL device according to claim 1, wherein said insulating film is one selected from the group consisting of a silicon oxide film, silicon nitride film, aluminum oxide film and tantalum oxide film.
Claim 4
Dependent Claim 27 words
A thin-film EL device according to claim 1, wherein said metal film is one selected from the group consisting of an aluminum film and a tantalum film.
Claim 5
Dependent Claim 100 words
A thin-film EL device having a double dielectric structure comprising a light-transmitting substrate, a light-transmitting electrode formed on said substrate, a first dielectric layer formed on said electrode, a single electroluminescent layer as a light emission layer formed on said first dielectric layer, a second dielectric layer formed on said light emission layer, an electrode for applying a voltage to said light emission layer formed on said second dielectric layer, and a film having an electric resistance inserted both between said first dielectric layer and said light emission layer and between said light emission layer and said second dielectric layer.
Claim 6
Dependent Claim 100 words
A thin-film EL device having a double dielectric structure comprising a light-transmitting substrate, a light-transmitting electrode formed on said substrate, a first dielectric layer formed on said electrode, a single electroluminescent layer as a light emission layer formed on said first dielectric layer, a second dielectric layer formed on said light emission layer, an electrode for applying a voltage to said light emission layer formed on said second dielectric layer, and a film having an electric resistance inserted both between said first dielectric layer and said light emission layer and between said light emission layer and said second dielectric layer.
Claim 7
Dependent Claim 59 words
A thin-film EL device according to claim 4, wherein each of said first and second dielectric layers is composed of a tantalum oxide (TaOx) layer and said film having resistance is composed of a tantalum oxide (TaOx) layer in which content of oxygen is lower than that of said tantalum oxide layer for said first and second dielectric layers.
Claim 8
Dependent Claim 22 words
A thin-film EL device according to either of claims 4 and 5, wherein said resistivity is not less than 10 8 Ωcm.

References Cited (Backward Citations)

JPS5552253A Cited
JPS55124182A Cited
JPS59110122A Cited
US4714951A Cited
US4613546A Cited
US4891684A Cited
JPH01128567A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1994-12-09 1995-06-10 1995-12-10 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1998-12-09 1999-06-10 1999-12-10 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2002-12-09 2003-06-10 2003-12-10 $7700.00 Window Closed / Lapsed

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