Semiconductor device

Abstract

Abstract PURPOSE: To provide a semiconductor device comprising a surface protecting film forming a thin film resistance on the semiconductor substrate with an insulating film inbetween in which the stability of the thin film resistance is improved due to effective protection from infiltration of moisture or sodium ions by use of a formation film consisting of a metal film serving as electrode wiring as part of the surface protecting film. CONSTITUTION: A thin film resistance composed of a metal or alloy 210 is formed on the surface of a semiconductor substrate 201 with an insulating film 204 of silicon dioxide or the like intermediate therebetween. Then a metal electrode 214 is formed at part of the thin film resistance 210, while an oxide film 211 is formed to cover part of the thin film resistance 210 and the metal electrode 214. Further the resulting composite is covered by an aluminum film 212 serving as electrode wiring. The aluminum film above the resistance film is subjected to selective anodic oxidation to produce a formation film 215. In this case the resistance film remains unaffected by the formation film 215 by virtue of the presence of the oxide film between the aluminum film and the resistance film. According to this device, the aluminum formation film works to effectively prevent moisture or sodium ions from infiltration, and the thin film resistance may enjoy a longer, stable life. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Koichiro Misaki

Bibliographic Details