Process for production of semiconductor device

Claim 2

A process for the production of a semiconductor device, which comprises forming a film of a resist composed of a substance generating an acid catalyst by being irradiated with radiation and a polymer having an Si-containing group that can be eliminated by the acid catalyst, selectively irradiating the resist film with radiation and patterning the irradiated resist film by one of oxygen reactive ion etching, ECR etching and reactive ion beam etching, wherein the resist comprises a polymer having on the side chain a structure represented by the following structural formula (2): ##STR6## wherein R 1 , R 2 and R 3 each represent an alkyl group or a phenyl group, and R 4 and R 5 each represent a hydrogen atom, an alkyl group, a phenyl group or ##STR7## and a substance capable of generating a protonic acid under irradiation with radiations.

Claim 3

A process according to claim 1, wherein the substance generating a protonic acid is a member selected from the group consisting of compounds represented by the following formulae: ##STR8## wherein X.sup.⊖ represents PF 6 .sup.⊖, BF 4 .sup.⊖, SbF 6 .sup.⊖, AsF 6 .sup.⊖ or SbF 5 (OH).sup.⊖.

Claim 4

A process for the production of a semiconductor device according to the two-layer resist method, which comprises forming a planarizing layer composed of an organic material on a substrate, forming a film of a polymer on the planarizing layer and forming a pattern, wherein light exposure is carried out by using a resist composed of a substance generating an acid catalyst by being irradiated with radiation and a polymer having an Si-containing group that can be eliminated by the acid catalyst, as said polymer, and the top layer and the bottom layer are simultaneously patterned by one of oxygen reactive ion etching, ECR etching and reactive ion beam etching, wherein the resist comprises a polymer having on the side chain a structure represented by the following structural formula (2): ##STR9## wherein R 1 , R 2 and R 3 each represent an alkyl group or a phenyl group, and R 4 and R 5 each represent a hydrogen atom, an alkyl group, a phenyl group or ##STR10## and a substance capable of generating a protonic acid under irradiation with radiations.

Claim 5

A process for the production of a semiconductor device according to the two-layer resist method, which comprises forming a planarizing layer composed of an organic material on a substrate, forming a film of a polymer on the planarizing layer and forming a pattern, wherein light exposure is carried out by using a resist composed of a substance generating an acid catalyst by being irradiated with radiation and a polymer having an Si-containing group that can be eliminated by the acid catalyst, as said polymer, and the top layer and the bottom layer are simultaneously patterned by one of oxygen reactive ion etching, ECR etching and reactive ion beam etching, wherein the resist comprises a polymer having on the side chain a structure represented by the following structural formula (2): ##STR9## wherein R 1 , R 2 and R 3 each represent an alkyl group or a phenyl group, and R 4 and R 5 each represent a hydrogen atom, an alkyl group, a phenyl group or ##STR10## and a substance capable of generating a protonic acid under irradiation with radiations.

Claim 6

A process according to claim 3, wherein the substance generating a protonic acid is a member selected from the group consisting of compounds represented by the following formulae: ##STR11## wherein X.sup.⊖ represents PF 6 .sup.⊖, BF 4 .sup.⊖, SbF 6 .sup.⊖, AsF 6 .sup.⊖ or SbF 5 (OH).sup.⊖.