US4481049A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bilevel resist
Assignee: Nokia Bell Labs
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Filing: 1984-03-02
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Granted: 1984-11-06
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Expires: 2004-03-02
Abstract
Abstract Excellent resolution in the lithographic fabrication of electronic devices is achieved with a specific bilevel resist. This bilevel resist includes an underlying layer formed with a conventional material such as a novolac resin baked at 200° C. for 30 minutes and an overlying layer including a silicon containing material such as a silicon derivative of poly(methyl methacrylate). This bilevel resist has the attributes of a trilevel resist and requires significantly less processing.
Inventors
- 👤 Elsa Reichmanis
- 👤 Gerald Smolinsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:58
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/004; G03F7/075; G03F7/0757; G03F7/0758; G03F7/09; G03F7/094; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
85 words
A process for fabricating a device comprising the steps of forming a radiation sensitive region, on a substrate, patterning at least a portion of said region, and further processing said substrate characterized in that said region comprises a composition formed by a polymerization process employing a material represented by the formula ##STR8## where R' contains silicon and is chosen so that the T g of said composition is higher than 50° C., and the silicon weight percentage of said composition is at least 6 percent.
Claim 2
Dependent Claim
85 words
A process for fabricating a device comprising the steps of forming a radiation sensitive region, on a substrate, patterning at least a portion of said region, and further processing said substrate characterized in that said region comprises a composition formed by a polymerization process employing a material represented by the formula ##STR8## where R' contains silicon and is chosen so that the T g of said composition is higher than 50° C., and the silicon weight percentage of said composition is at least 6 percent.
Claim 3
Dependent Claim
46 words
The process of claim 1 wherein R is represented by the formula ##STR9## where X, Y, and Z are chosen so that the T g of said composition is higher than 50° C., and the silicon weight percentage of said composition is at least 6 percent.
Claim 4
Dependent Claim
25 words
The process of claim 2 wherein said R is chosen from the group consisting of trimethylsilylmethyl, 2-(trimethylsilyl)ethyl, 3-(trimethylsilyl)propyl, trimethoxysilylmethyl, 2-(trimethoxysilyl)ethyl, 3-(trimethoxysilyl)propyl, 3-(pentamethyldisiloxy)propyl, 3-[bis(trimethylsiloxy)methylsilyl]propyl, and 3-[tris(trimethylsiloxy)silyl]propyl.
Claim 5
Dependent Claim
30 words
The process of claim 1 wherein said composition is formed by a polymerization process employing said material and a monomer chosen from the group consisting of oxime and indanone compounds.
Claim 6
Dependent Claim
30 words
The process of claim 2 wherein said composition is formed by a polymerization process employing said material and a monomer chosen from the group consisting of oxime and indanone compounds.
Claim 7
Dependent Claim
22 words
The process of claim 1 wherein a region capable of selective removal is interposed between said radiation sensitive region and said substrate.
Claim 8
Dependent Claim
25 words
The process of claim 6 wherein said R is chosen from the group consisting of trimethylsilylmethyl, 2-(trimethylsilyl)ethyl, 3-(trimethylsilyl)propyl, trimethoxysilylmethyl, 2-(trimethoxysilyl)ethyl, 3-(trimethoxysilyl)propyl, 3-(pentamethyldisiloxy)propyl, 3-[bis(trimethylsiloxy)methylsilyl]propyl, and 3-[tris(trimethylsiloxy)silyl]propyl.
Claim 9
Dependent Claim
30 words
The process of claim 7 wherein said composition is formed by a polymerization process employing said material and a monomer chosen from the group consisting of oxime and indanone compounds.
Claim 10
Dependent Claim
30 words
The process of claim 6 wherein said composition is formed by a polymerization process employing said material and a monomer chosen from the group consisting of oxime and indanone compounds.
Claim 11
Dependent Claim
27 words
The process of claim 6 wherein said patterning comprises the step of subjecting said region to said radiation and then subjecting said region to a plasma discharge.
Claim 12
Dependent Claim
21 words
The process of claim 10 wherein said region capable of selective removal undergoes said removal by being subjected to a solvent.
Claim 13
Dependent Claim
14 words
The process of claim 10 wherein said plasma discharge comprises an oxygen plasma discharge.
References Cited (Backward Citations)
US4426247A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-11-06 | 1988-05-07 | 1988-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-11-06 | 1992-05-07 | 1992-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-11-06 | 1996-05-07 | 1996-11-06 | $7700.00 | Window Closed / Lapsed |