Patent US5063422A successfully refreshed from Google Patents.
US5063422A
Expired / Lapsed
US
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Devices having shallow junctions
Assignee: Nokia Bell Labs
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Filing: 1990-04-26
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Granted: 1991-11-05
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Expires: 2010-04-26
Abstract
Abstract In CMOS based integrated circuits, stricter design rules require source and drain junctions shallower than 2500 ANGSTROM . By using a specific device configuration, a shallow junction is obtainable while resistance to latch-up is improved and other electrical properties, e.g., low leakage current, are maintained. To achieve this result the p-channel device should have an activation energy of the junction reverse leakage current region less than 1.12 eV, with a junction dopant region shallower than 1200 ANGSTROM and a monotonically decreasing junction dopant profile.
Inventors
- 👤 Steven J. Hillenius
- 👤 Joseph Lebowitz
- 👤 Ruichen Liu
- 👤 William T. Lynch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 15:36
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D62/60; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/017; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/854; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; H10D84/859
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
157 words
An article comprising a silicon substrate having an N-tub and a P-tub each of which includes one or more corresponding p-channel MOS and n-channel MOS devices, respectively, each such p-channel device having a p-type conductivity drain junction dopant region which forms a pn junction with the N-tub, a metal silicide layer contacting the drain junction dopant region, whereby an interface is formed between the metal silicide layer and the drain junction dopant region, said drain junction dopant region having an average depth, measure between said interface and said pn junction, equal to 1200 Å or less, said drain junction dopant region having a dopant concentration which is highest at said interface, the drain junction dopant region having an activation energy of reverse leakage current across its pn junction, the dopant concentration in the drain junction dopant region being such that the activation energy of reverse leakage current across said pn junction is less than about 0.85 eV.
Claim 2
Dependent Claim
157 words
An article comprising a silicon substrate having an N-tub and a P-tub each of which includes one or more corresponding p-channel MOS and n-channel MOS devices, respectively, each such p-channel device having a p-type conductivity drain junction dopant region which forms a pn junction with the N-tub, a metal silicide layer contacting the drain junction dopant region, whereby an interface is formed between the metal silicide layer and the drain junction dopant region, said drain junction dopant region having an average depth, measure between said interface and said pn junction, equal to 1200 Å or less, said drain junction dopant region having a dopant concentration which is highest at said interface, the drain junction dopant region having an activation energy of reverse leakage current across its pn junction, the dopant concentration in the drain junction dopant region being such that the activation energy of reverse leakage current across said pn junction is less than about 0.85 eV.
Claim 3
Dependent Claim
11 words
The article of claim 1 wherein said silicide comprises titanium silicide.
Claim 4
Dependent Claim
12 words
The article of claim 1 wherein said silicide comprises a cobalt silicide.
Claim 5
Dependent Claim
12 words
The article of claim 3 wherein said dopant comprises a boron entity.
Claim 6
Dependent Claim
30 words
The article of claim 4 including a junction for electrical communication with said n-channel, said junction having an activation energy of the reverse leakage current of less than 0.85 eV.
Claim 7
Dependent Claim
30 words
The article of claim 2 including a junction for electrical communication with said n-channel, said junction having an activation energy of the reverse leakage current of less than 0.85 eV.
Claim 8
Dependent Claim
16 words
The article of claim 1 in which the activation energy is greater than about 0.65 eV.
Claim 9
Dependent Claim
19 words
The article of claim 1 in which the dopant concentration is less than about 2×10 15 per square centimeter.
Claim 10
Dependent Claim
12 words
The article of claim 8 in which the dopant is essentially boron.
Claim 11
Dependent Claim
19 words
The article of claim 8 in which the dopant concentration is greater than about 1×10 15 per square centimeter.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-04 | 1995-05-06 | 1995-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-04 | 1999-05-06 | 1999-11-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-04 | 2003-05-06 | 2003-11-05 | $7700.00 | Window Closed / Lapsed |