US4791074A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor apparatus
Assignee: Toshiba Corp
•
Filing: 1987-07-15
•
Granted: 1988-12-13
•
Expires: 2007-07-15
Abstract
Abstract According to the present invention, a method of manufacturing a semiconductor apparatus is provided which comprises the steps of (a) depositing a boron layer on a silicon substrate, and (b) thermally diffusing boron from said boron layer into said silicon substrate. The present invention, which is characteristically based on the solid phase diffusion process, enables even a thin layer to be deposited. Further, unlike the ion implantation process, the present invention enables an impurity to be uniformly diffused even into an inclined plane. Unlike the case where boron-containing glass is used as a diffusion source, the invention enables a sufficient amount of boron to be diffused even at a temperature lower than 1000° C.
Inventors
- 👤 Yoshitaka Tsunashima
- 👤 Keisaku Yamada
- 👤 Takako Kashio
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:54
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10P32/14; H10P32/1408; Y; Y10; Y10S; Y10S148/00; Y10S148/158
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
43 words
A method of manufacturing a semiconductor device, which comprises the steps of: (a) depositing a boron layer on a silicon substrate by vacuum evaporating elemental boron onto the silicon substrate; and (b) thermally diffusing boron from said boron layer into said silicon substrate.
Claim 2
Independent Claim
43 words
A method of manufacturing a semiconductor device, which comprises the steps of: (a) depositing a boron layer on a silicon substrate by vacuum evaporating elemental boron onto the silicon substrate; and (b) thermally diffusing boron from said boron layer into said silicon substrate.
Claim 3
Dependent Claim
24 words
The method according to claim 1, wherein said deposition of the boron layer is carried out after the argon sputtering of the substrate surface.
Claim 4
Dependent Claim
19 words
The method according to claim 1, wherein said boron layer is formed with a thickness smaller than 100 Å.
Claim 5
Dependent Claim
28 words
The method according to claim 1, wherein said diffusion of boron is carried out by heating said silicon substrate to a temperature ranging from 700° to 1000° C.
Claim 6
Dependent Claim
29 words
The method according to claim 1, further comprising the step of forming a metal wire layer on said boron layer after the diffusion of boron from the boron layer.
Claim 7
Independent Claim
80 words
The method of manufacturing a semiconductor device, which comprises the steps of: (a) selectively forming an insulation layer on a silicon substrate; (b) depositing a boron layer on at least said silicon substrate by vacuum evaporating elemental boron onto the silicon substrate having the formed insulation layer thereon in an opening provided in said insulation layer; (c) thermally diffusing boron form said boron layer into said silicon substrate; and thereafter (d) forming a metal wire layer on said boron layer.
Claim 8
Independent Claim
80 words
The method of manufacturing a semiconductor device, which comprises the steps of: (a) selectively forming an insulation layer on a silicon substrate; (b) depositing a boron layer on at least said silicon substrate by vacuum evaporating elemental boron onto the silicon substrate having the formed insulation layer thereon in an opening provided in said insulation layer; (c) thermally diffusing boron form said boron layer into said silicon substrate; and thereafter (d) forming a metal wire layer on said boron layer.
Claim 9
Dependent Claim
28 words
The method according to claim 6, wherein said diffusion of boron is carried out by heating said silicon substrate to a temperature ranging from 700° to 1100° C.
Claim 10
Dependent Claim
37 words
The method according to claim 6, wherein said deposition of a boron layer is carried out after forming a p-type conductive layer in said silicon substrate, in an area of said opening provided in said insulation layer.
Claim 11
Dependent Claim
25 words
The method according to claim 8, wherein said p-type conductive layer is formed on the entire or a part of the area of said opening.
Claim 12
Dependent Claim
21 words
The method according to claim 6, wherein the metal wire layer is formed after said diffusion of boron over said opening.
Claim 13
Dependent Claim
52 words
The method according to claim 6, wherein said boron layer is deposited on both said insulation layer, which is composed of silicon dioxide, and said silicon substrate, said boron layer deposited on said insulation layer being converted into boron-doped silicate glass (BSG) by the heat treatment applied for the diffusion of boron.
Claim 14
Dependent Claim
83 words
The method of forming an integrated semiconductor device according to claim 6 wherein said steps (a) to (d) are carried out after forming a p-type conductive layer in said silicon substrate in an area of an opening provided in a field insulation layer, and step (a) is carried out to create an opening to register with the opening in the field insulation layer, the boron layer having a thickness smaller than 100 Å and the thermal diffusion occurring at 700° to 1000° C.
References Cited (Backward Citations)
US3576685A
Cited
US3874936A
Cited
US3966515A
Cited
US4061506A
Cited
US4114256A
Cited
US4575920A
Cited
US4579609A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-13 | 1992-06-13 | 1992-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-13 | 1996-06-13 | 1996-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-13 | 2000-06-13 | 2000-12-13 | $7700.00 | Window Closed / Lapsed |