US4061506A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Correcting doping defects
Assignee: Texas Instruments Inc
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Filing: 1975-05-01
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Granted: 1977-12-06
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Expires: 1995-05-01
Abstract
Abstract A semiconductive device and a method for producing the semiconductive device, wherein random defects or inaccuracies in precise registrations of certain patterns are compensated by the introduction of selected impurities. The selected impurities bring about changes in the electrical characteristics of those portions of the semiconductor affected by the random defects or registration inaccuracies so as to prevent them from causing malfunctions in the completed devices.
Inventors
- 👤 David Joal McElroy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:56
CPC Classifications
H; H10; H10P; H10P95/00; H10B; H10B20/00; H10D; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/024; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
139 words
In the method of manufacturing semiconductor devices having particular portions determining the operative characteristics thereof, and wherein said method includes the step of precisely locating at least one of said portions with respect to another, the improvement of identifying devices which are latently defective due to excessive misalignment of one or more pair of interrelated regions by introducing selected impurities to those segments which are excessively misaligned, said selected impurities being of a conductivity type effecting electrical characteristics similar to those predominant ambient surface impurities which with the passage of time tend to render the device inoperative by degrading the operating characteristics of those portions of the device which are misaligned, said selected impurities being introduced in quantities sufficient to complete the said degradation but less than sufficient to degrade the operating characteristics of portions which are not misaligned.
Claim 2
Dependent Claim
139 words
In the method of manufacturing semiconductor devices having particular portions determining the operative characteristics thereof, and wherein said method includes the step of precisely locating at least one of said portions with respect to another, the improvement of identifying devices which are latently defective due to excessive misalignment of one or more pair of interrelated regions by introducing selected impurities to those segments which are excessively misaligned, said selected impurities being of a conductivity type effecting electrical characteristics similar to those predominant ambient surface impurities which with the passage of time tend to render the device inoperative by degrading the operating characteristics of those portions of the device which are misaligned, said selected impurities being introduced in quantities sufficient to complete the said degradation but less than sufficient to degrade the operating characteristics of portions which are not misaligned.
Claim 3
Dependent Claim
67 words
In the manufacture of semiconductor devices of the type having insulating coatings thereon of various thicknesses and a pattern of metalligation thereon, the step of compensating for misalignment of patterns used in masking steps by subjecting the devices to an ion implantation process after the pattern of metallization has been applied to penetrate the thinnest of the insulating coatings, but not the thicker insulating coatings or metallization.
Claim 4
Dependent Claim
67 words
In the manufacture of semiconductor devices of the type having insulating coatings thereon of various thicknesses and a pattern of metalligation thereon, the step of compensating for misalignment of patterns used in masking steps by subjecting the devices to an ion implantation process after the pattern of metallization has been applied to penetrate the thinnest of the insulating coatings, but not the thicker insulating coatings or metallization.
Claim 5
Dependent Claim
60 words
In the method of manufacturing a semiconductor device having particular portions determining the operative characteristics thereof, and wherein said method includes the step of precisely locating at least one of said portions with respect to another, the improvement of compensating for mislocations of said portions by introducing selected impurities to at least those segments of the portions that are mislocated.
Claim 6
Dependent Claim
60 words
In the method of manufacturing a semiconductor device having particular portions determining the operative characteristics thereof, and wherein said method includes the step of precisely locating at least one of said portions with respect to another, the improvement of compensating for mislocations of said portions by introducing selected impurities to at least those segments of the portions that are mislocated.
Claim 7
Dependent Claim
29 words
The method according to claim 3 in which the step of precisely locating said at least one of said portions with respect to said another includes the alignment thereof.
Claim 8
Dependent Claim
22 words
The method according to claim 4 in which said impurities are selected from the class consisting of Phosphorus, Arsenic, Antimony and Bismuth.
Claim 9
Dependent Claim
15 words
The method according to claim 5 in which said impurities are introduced by ion implantation.
Claim 10
Dependent Claim
15 words
The method according to claim 4 in which said impurities are introduced by ion implantation.
Claim 11
Dependent Claim
35 words
The method according to claim 4 in which said mislocations of said portions are misalignments and in which the introduction of selected impurities is to at least those segments of the portions that are misaligned.
Claim 12
Dependent Claim
22 words
The method according to claim 8 in which said impurities are selected from the class consisting of Phosphorus, Arsenic, Antimony and Bismuth.
Claim 13
Dependent Claim
15 words
The method according to claim 9 in which said impurities are introduced by ion implantation.
Claim 14
Dependent Claim
15 words
The method according to claim 8 in which said impurities are introduced by ion implantation.
Claim 15
Dependent Claim
26 words
The method according to claim 3 in which the introduction of selected impurities is additionally made to other portions of the exterior of the semiconductor device.
Claim 16
Dependent Claim
22 words
The method according to claim 12 in which said impurities are selected from the class consisting of Phosphorus, Arsenic, Antimony and Bismuth.
Claim 17
Dependent Claim
15 words
The method according to claim 13 in which said impurities are introduced by ion implantation.
Claim 18
Dependent Claim
15 words
The method according to claim 12 in which said impurities are introduced by ion implantation.
Claim 19
Dependent Claim
25 words
The method according to claim 12 in which the introduction of the selected impurities is made to the entire operative exterior of the semiconductor device.
Claim 20
Dependent Claim
22 words
The method according to claim 16 in which said impurities are selected from the class consisting of Phosphorus, Arsenic, Antimony and Bismuth.
Claim 21
Dependent Claim
15 words
The method according to claim 17 in which said impurities are introduced by ion implantation.
Claim 22
Dependent Claim
15 words
The method according to claim 16 in which said impurities are introduced by ion implantation.
Claim 23
Dependent Claim
22 words
The method according to claim 3 in which said impurities are selected from the class consisting of Phosphorous, Arsenic, Antimony and Bismuth.
Claim 24
Dependent Claim
15 words
The method according to claim 20 in which said impurities are introduced by ion implantation.
Claim 25
Dependent Claim
15 words
The method according to claim 3 in which said impurities are introduced by ion implantation.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-12-05 | 1981-06-06 | 1981-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-12-05 | 1985-06-06 | 1985-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-12-05 | 1989-06-06 | 1989-12-06 | $7700.00 | Window Closed / Lapsed |