Patent US5061645A successfully refreshed from Google Patents.
US5061645A
Expired / Lapsed
US
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Method of manufacturing a bipolar transistor
Assignee: Hitachi Ltd
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Filing: 1990-03-26
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Granted: 1991-10-29
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Expires: 2010-03-26
Abstract
Abstract A method of manufacturing a bipolar transistor semiconductor device wherein the active regions of a transistor are formed in an opening provided in an insulating film, electrodes are led out by a polycrystalline silicon film formed on the insulating film, and the upper surfaces of the emitter and base electrodes and the exposed surface of the insulating film are substantially even.
Inventors
- 👤 Kazuo Nakazato
- 👤 Tohru Nakamura
- 👤 Masatoshi Matsuda
- 👤 Takao Miyazaki
- 👤 Tokuo Kure
- 👤 Takahiro Okabe
- 👤 Minoru Nagata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:20
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/34; H10D10/00; H10D10/01; H10D10/051; H10D10/40; H10D10/60; H10D48/345; H10D64/00; H10D64/20; H10D64/27; H10D64/281; H10P; H10P76/00; H10P76/40
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
312 words
A method of manufacturing a semiconductor bipolar transistor device comprising the steps of: (a) selectively etching predetermined portions of a surface region of a semiconductor substrate to leave a first protruding portion of a first conductivity type and a second protruding portion of a first conductivity type; (b) forming a first insulating film on said substrate, by thermally oxidizing an exposed surface of the semiconductor substrate, including portions of side surfaces of each of the first and second protruding portions, and wherein said first insulating film has a first window and a second window which expose remaining portions of the side surfaces of said first and second protruding portions, respectively; (c) after forming said first insulating film, forming a conductive polycrystalline semiconductor film of second conductivity type, opposite to said first conductivity type, on the first insulating film, to contact with exposed remaining portions of the side surfaces of both said first and second protruding portions; (d) thermally oxidizing an exposed surface of said polycrystalline semiconductor film to form a second insulating film; (e) doping a surface region of said second protruding portion with an impurity of said first conductivity type to form a lower resistivity region; (f) after thermally oxidizing the exposed surface of the polycrystalline semiconductor film, doping a predetermined portion of said first protruding portion with an impurity of said second conductivity type to form a second region for said bipolar transistor device, said second region being electrically connected with said polycrystalline semiconductor film; (g) after thermally oxidizing the exposed surface of the polycrystalline semiconductor film, doping another predetermined portion of said first protruding portion, adjacent said second region, with an impurity of said first conductivity type to form a third region for said bipolar transistor device; and (h) forming electrodes connected with exposed upper surfaces of said first protruding portion, polycrystalline semiconductor film and second protruding portion, respectively.
Claim 2
Independent Claim
312 words
A method of manufacturing a semiconductor bipolar transistor device comprising the steps of: (a) selectively etching predetermined portions of a surface region of a semiconductor substrate to leave a first protruding portion of a first conductivity type and a second protruding portion of a first conductivity type; (b) forming a first insulating film on said substrate, by thermally oxidizing an exposed surface of the semiconductor substrate, including portions of side surfaces of each of the first and second protruding portions, and wherein said first insulating film has a first window and a second window which expose remaining portions of the side surfaces of said first and second protruding portions, respectively; (c) after forming said first insulating film, forming a conductive polycrystalline semiconductor film of second conductivity type, opposite to said first conductivity type, on the first insulating film, to contact with exposed remaining portions of the side surfaces of both said first and second protruding portions; (d) thermally oxidizing an exposed surface of said polycrystalline semiconductor film to form a second insulating film; (e) doping a surface region of said second protruding portion with an impurity of said first conductivity type to form a lower resistivity region; (f) after thermally oxidizing the exposed surface of the polycrystalline semiconductor film, doping a predetermined portion of said first protruding portion with an impurity of said second conductivity type to form a second region for said bipolar transistor device, said second region being electrically connected with said polycrystalline semiconductor film; (g) after thermally oxidizing the exposed surface of the polycrystalline semiconductor film, doping another predetermined portion of said first protruding portion, adjacent said second region, with an impurity of said first conductivity type to form a third region for said bipolar transistor device; and (h) forming electrodes connected with exposed upper surfaces of said first protruding portion, polycrystalline semiconductor film and second protruding portion, respectively.
Claim 3
Dependent Claim
68 words
A method of manufacturing a semiconductor bipolar device according to claim 1, wherein said step (a) is performed after a stacked film comprising a first silicon dioxide film, a first silicon nitride film and a second silicon dioxide film has been formed on predetermined areas of the surface region of said substrate for masking said predetermined areas during said etching to leave the first and second protruding portions.
Claim 4
Dependent Claim
55 words
A method of manufacturing a semiconductor bipolar device according to claim 1, wherein said thermal oxidation, to form the first insulating film, is applied after a silicon nitride film is formed on side surfaces of the first silicon dioxide film, the first silicon nitride film, the second silicon dioxide film and the second protruding portion.
Claim 5
Dependent Claim
61 words
A method of manufacturing a semiconductor bipolar device according to claim 1, wherein, in step (a), the selective etching is performed to leave first and second protruding portions, each protruding portion extending from a common lower surface and having an upper surface, the distance between the common lower surface and the upper surface for each protruding portion being substantially the same.
Claim 6
Dependent Claim
24 words
A method of manufacturing a semiconductor bipolar device according to claim 1, wherein said first and second protruding portions form a single bipolar transistor.
Claim 7
Dependent Claim
33 words
A method of manufacturing a semiconductor bipolar device according to claim 5, wherein a first region for said bipolar transistor device, of the first conductivity type, is provided in said first protruding portion.
Claim 8
Dependent Claim
30 words
A method of manufacturing a semiconductor bipolar device according to claim 6, wherein said semiconductor substrate includes an epitaxial layer, said first and second protruding portions including said epitaxial layer.
Claim 9
Dependent Claim
22 words
A method of manufacturing a semiconductor bipolar device according to claim 7, wherein said first region is provided in said epitaxial layer.
Claim 10
Dependent Claim
22 words
A method of manufacturing a semiconductor bipolar device according to claim 8, wherein said third region is provided on said second region.
Claim 11
Dependent Claim
25 words
A method of manufacturing a semiconductor bipolar device according to claim 8, wherein said third region is provided at a side of the second region.
Claim 12
Dependent Claim
33 words
A method of manufacturing a semiconductor bipolar device according to claim 9, wherein a first region for said bipolar transistor device, of the first conductivity type, is provided in said first protruding portion.
Claim 13
Dependent Claim
30 words
A method of manufacturing a semiconductor bipolar device according to claim 11, wherein said semiconductor substrate includes an epitaxial layer, said first and second protruding portions including said epitaxial layer.
Claim 14
Dependent Claim
22 words
A method of manufacturing a semiconductor bipolar device according to claim 12, wherein said first region is provided in said epitaxial layer.
Claim 15
Dependent Claim
45 words
A method of manufacturing a semiconductor bipolar device according to claim 1, wherein a remaining portion of the polycrystalline semiconductor film, after forming the second insulating film, is provided in contact with the exposed remaining portion of the side surface of the first protruding portion.
Claim 16
Dependent Claim
111 words
A method of manufacturing a semiconductor bipolar device according to claim 14, wherein the remaining portion of the polycrystalline semiconductor film is provided on a first portion of the first insulating film, wherein the exposed surface of the polycrystalline semiconductor film overlies a second portion of the first insulating film, and wherein the exposed surface of the polycrystalline semiconductor film is thermally oxidized, to form the second insulating film, such that an entire thickness of the polycrystalline semiconductor film overlying said second portion of the first insulating film, from the exposed surface, is thermally oxidized, whereby the second insulating film is provided on the second portion of the first insulating film.
Claim 17
Dependent Claim
46 words
A method of manufacturing a semiconductor bipolar device according to claim 15, wherein the exposed surface of the polycrystalline semiconductor film that is oxidized to form the second insulating film is the surface of a portion of the polycrystalline semiconductor film adjacent the second protruding portion.
Claim 18
Dependent Claim
50 words
A method of manufacturing semiconductor bipolar device according to claim 1, wherein after forming the third region and prior to forming the electrodes, a conductive polycrystalline semiconductor layer is provided on the third region, and wherein the forming the electrodes an electrode is connected to the conductive polycrystalline semiconductor layer.
Claim 19
Dependent Claim
25 words
A method of manufacturing a semiconductor bipolar device according to claim 1, wherein the conductive polycrystalline semiconductor film has a metal silicide layer disposed thereon.
Claim 20
Dependent Claim
27 words
A method of manufacturing a semiconductor bipolar device according to claim 1, wherein said first conductivity type and said second conductivity type are n-type and p-type, respectively.
Claim 21
Dependent Claim
25 words
A method of manufacturing a semiconductor bipolar device according to claim 1, wherein said second region is a base region of said bipolar transistor device.
Claim 22
Dependent Claim
25 words
A method of manufacturing a semiconductor bipolar device according to claim 1, wherein said third region is an emitter region of said bipolar transistor device.
Claim 23
Dependent Claim
32 words
A method of manufacturing a semiconductor bipolar device according to claim 1, wherein said polycrystalline semiconductor film comprises a polycrystalline silicon film, and said second insulating film comprises a silicon dioxide film.
Claim 24
Dependent Claim
49 words
A method of manufacturing a semiconductor bipolar device according to claim 4, wherein a distance from said common lower surface at each side of each of the first and second protruding portions, to said upper surface of each of the first and second protruding portions, is substantially the same.
Claim 25
Dependent Claim
24 words
A method of manufacturing a semiconductor bipolar device according to claim 23, wherein said first and second protruding portions form a single bipolar transistor.
Claim 26
Dependent Claim
45 words
A method of manufacturing a semiconductor bipolar device according to claim 1, wherein the surface region of the second protruding portion is doped with an impurity of the first conductivity type after the step of thermally oxidizing the exposed surface of the polycrystalline semiconductor film.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-10-28 | 1995-04-29 | 1995-10-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-28 | 1999-04-29 | 1999-10-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-28 | 2003-04-29 | 2003-10-29 | $7700.00 | Window Closed / Lapsed |