US4372030A
Expired / Lapsed
US
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Method for producing a semiconductor device
Assignee: Toshiba Corp
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Filing: 1980-11-19
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Granted: 1983-02-08
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Expires: 2000-11-19
Abstract
Abstract A method for producing a semiconductor device comprises the steps of selectively etching a part of a second conductivity type semiconductor layer formed on a first conductivity type semiconductor substrate where an isolating oxide layer is to be formed; introducing a first conductivity type impurity into a substrate contact forming part extending from the bottom of said etched part, by way of the side surface thereof, to the top surface of said second conductivity type semiconductor layer to form a substrate contact; thermally oxidizing said etched part to form an isolating oxide layer and forming a semiconductor element in said second conductivity type semiconductor layer.
Inventors
- 👤 Shinji Saitoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:01
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/021; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
105 words
A method for producing a semiconductor device comprising the steps of selectively etching a part of a second conductivity type semiconductor layer formed on a first conductivity type semiconductor substrate where an isolating oxide layer is to be formed; introducing a first conductivity type impurity into a substrate contact forming part extending from the bottom of said etched part, by way of the side surface thereof, to the top surface of said second conductivity type semiconductor layer to form a substrate contact; thermally oxidizing said etched part to form an isolating oxide layer; and forming a semiconductor element in said second conductivity type semiconductor layer.
Claim 2
Independent Claim
105 words
A method for producing a semiconductor device comprising the steps of selectively etching a part of a second conductivity type semiconductor layer formed on a first conductivity type semiconductor substrate where an isolating oxide layer is to be formed; introducing a first conductivity type impurity into a substrate contact forming part extending from the bottom of said etched part, by way of the side surface thereof, to the top surface of said second conductivity type semiconductor layer to form a substrate contact; thermally oxidizing said etched part to form an isolating oxide layer; and forming a semiconductor element in said second conductivity type semiconductor layer.
Claim 3
Dependent Claim
82 words
A method as claimed in claim 1, wherein said step of selectively etching away the part of said second conductivity type semiconductor layer where the isolating oxide layer is to be formed comprises covering said second conductivity type semiconductor layer with an oxidation resisting material layer, selectively etching away the part of said oxidation resisting material layer corresponding to said isolating oxide layer, and etching away said second conductivity type semiconductor layer using the remaining oxidation resisting material layer as a mask.
Claim 4
Dependent Claim
59 words
A method as claimed in claim 1 or 2, wherein a part of said second conductivity type semiconductor layer which corresponds to an element isolation region is also etched by said etching step, and said first conductivity type impurity is selectively introduced also in an area reaching from the thus formed etched part to form the element isolation region.
Claim 5
Dependent Claim
15 words
A method as claimed in claim 2, wherein said oxidation resisting material is silicon nitride.
Claim 6
Dependent Claim
21 words
A method as claimed in claim 4, wherein the introduction of said first conductivity type impurity is performed by ion implantation.
Claim 7
Dependent Claim
42 words
A method as claimed in claim 1 or 2, further comprising the step of forming a first conductivity type impurity region to connect with said substrate contact in an area adjacent to said isolating oxide layer after forming said isolating oxide layer.
Claim 8
Dependent Claim
16 words
A method as claimed in claim 1, wherein said semiconductor device is a bipolar semiconductor device.
Claim 9
Dependent Claim
26 words
A method as claimed in claim 7, wherein said semiconductor device is a substrate pnp transistor in which the substrate contact acts as a collector terminal.
References Cited (Backward Citations)
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US3928091A
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US3911471A
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US3992232A
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US3993513A
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US4140558A
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US4283236A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-07 | 1986-08-09 | 1987-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-07 | 1990-08-09 | 1991-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-07 | 1994-08-09 | 1995-02-08 | $7700.00 | Window Closed / Lapsed |