Hot electron programmable, tunnel electron erasable contactless EEPROM

Claim 2

An electrically erasable, electrically programmable read-only memory cell formed in a face of a semiconductor substrate of a first conductivity type, comprising: source and drain regions of a second conductivity type opposite the first type, formed in the substrate and separated by a channel region; said source region including a Fowler-Nordheim tunnel window subregion located opposite said channel region; a floating gate conductor insulatively disposed over said channel region for controlling channel conductivity; said floating gate having a first channel section layer and a second layer overlying and in contact with said first channel section layer; said first channel section layer being insulatively disposed over said channel region, said channel region being defined by source and drain region junctions which are substantially aligned with edges of said first channel section layer; said second layer including a tunnel window section insulatively disposed over said tunnel window subregion for establishing a Fowler-Nordheim tunnel current path; and a control gate conductor insulatively disposed over said floating gate conductor; the memory cell being programmable by transferring a predetermined charge to said floating gate conductor by hot carrier injection in response to programming voltages applied to said control gate conductor and said drain region relative to said source region; the memory cell being erasable by removing a predetermined charge from said floating gate conductor by Fowler-Nordheim tunneling in response to an erasing voltage applied to said control gate conductor relative to said source region.

Claim 3

The memory cell of claim 1, wherein said channel region includes a dopant of the first conductivity type for adjusting the threshold voltage for said channel region.

Claim 4

The memory cell of claim 2, wherein said source region includes a dopant of said second conductivity type for creating a sloped source junction profile.

Claim 5

The memory cell of claim 1, wherein a channel insulator layer between said first channel section layer and said channel region is significantly thicker than a tunnel window insulator layer between said tunnel window section and said tunnel window subregion.

Claim 6

The memory cell of claim 4, wherein said source tunnel window subregion includes a dopant of the second conductivity type.

Claim 7

The memory cell of claim 1, further comprising thick insulator areas over said source and drain regions, said floating gate conductor extending entirely over said source insulator area between said channel region and said tunnel window subregion.

Claim 8

The memory cell of claim 6, wherein said drain region is shared with an adjacent identical memory cell.

Claim 9

The memory cell of claim 7, further including thick field insulator isolation areas formed in the substrate on either side of the pair of memory cells, adjacent respective source regions with respective tunnel window subregions in between, thereby isolating the memory cell-pair from adjacent memory cell-pairs.

Claim 10

An array of electrically-erasable, electrically-programmable read-only memory cells formed in a face of a semiconductor substrate of a first conductivity type, comprising: a plurality of parallel source and drain bitlines, of a second conductivity type opposite the first type, formed in columns in the substrate; a plurality of parallel control gate wordline conductors formed over the substrate substantially perpendicular to said source and drain bitlines, each defining a row of memory cells; each memory cell including respective source and drain regions of said source and drain bitlines, with a channel region in between, and a control gate conductor formed by a corresponding portion of a control gate wordline conductor substantially overlying said source, drain and channel regions; for each memory cell, a floating gate conductor insulatively disposed between said control gate conductor and said channel region for controlling the conductivity of said channel region based on a selected program charge stored on said floating gate conductor; for each memory cell, said source region including a Fowler-Nordheim tunnel window subregion located opposite said channel region; for each memory cell, said floating gate conductor having a first channel section layer and a second layer overlying and in contact with said first channel section layer; said first channel section layer being insulatively disposed over said channel region, said channel region being defined by source and drain region junctions which are substantially aligned with edges of said first channel section layer; said second layer including a tunnel window section insulatively disposed over said tunnel window subregion for establishing a Fowler-Nordheim tunnel current path; said memory cell being programmable by transferring a predetermined charge to said floating gate by hot carrier injection in response to programming voltages applied to said control gate and said drain relative to said source regions; the memory cell being erasable by removing a predetermined charge from said floating gate by Fowler-Nordheim tunneling in response to an erasing voltage applied to said control gate relative to said source region, thereby causing a Fowler-Nordheim tunnel current from said tunnel window section to said tunnel window subregion.

Claim 11

An array of electrically-erasable, electrically-programmable read-only memory cells formed in a face of a semiconductor substrate of a first conductivity type, comprising: a plurality of parallel source and drain bitlines, of a second conductivity type opposite the first type, formed in columns in the substrate; a plurality of parallel control gate wordline conductors formed over the substrate substantially perpendicular to said source and drain bitlines, each defining a row of memory cells; each memory cell including respective source and drain regions of said source and drain bitlines, with a channel region in between, and a control gate conductor formed by a corresponding portion of a control gate wordline conductor substantially overlying said source, drain and channel regions; for each memory cell, a floating gate conductor insulatively disposed between said control gate conductor and said channel region for controlling the conductivity of said channel region based on a selected program charge stored on said floating gate conductor; for each memory cell, said source region including a Fowler-Nordheim tunnel window subregion located opposite said channel region; for each memory cell, said floating gate conductor having a first channel section layer and a second layer overlying and in contact with said first channel section layer; said first channel section layer being insulatively disposed over said channel region, said channel region being defined by source and drain region junctions which are substantially aligned with edges of said first channel section layer; said second layer including a tunnel window section insulatively disposed over said tunnel window subregion for establishing a Fowler-Nordheim tunnel current path; said memory cell being programmable by transferring a predetermined charge to said floating gate by hot carrier injection in response to programming voltages applied to said control gate and said drain relative to said source regions; the memory cell being erasable by removing a predetermined charge from said floating gate by Fowler-Nordheim tunneling in response to an erasing voltage applied to said control gate relative to said source region, thereby causing a Fowler-Nordheim tunnel current from said tunnel window section to said tunnel window subregion.

Claim 12

The memory array of claim 9, wherein, for each memory cell, said channel region includes a dopant of the first conductivity type for adjusting the threshold voltage for said channel region.

Claim 13

The memory array of claim 10, wherein, for each memory cell, said source region includes a dopant of said second conductivity type for creating a sloped source junction profile.

Claim 14

The memory array of claim 9, wherein for each memory cell, a channel insulator layer between said first channel section layer and said channel region is significantly thicker than a tunnel window insulator layer between said tunnel window section and said tunnel window subregion.

Claim 15

The memory array of claim 12, wherein said tunnel window subregion includes a dopant of the second conductivity type.

Claim 16

The memory array of claim 9, further comprising: thick insulator areas over said source and drain bitlines; for each memory cell, said second layer of said floating gate conductor extending over said source insulator area between said channel region and said tunnel window subregion.

Claim 17

The memory array of claim 14, wherein a column of memory cell-pairs is defined by separate source bitlines with an intermediate drain bitline, such that for each memory cell-pair, separate source regions share a single drain region.

Claim 18

The memory array of claim 15, further including thick field insulator isolation areas formed in columns on the substrate on a side of said source bitlines opposite said intermediate drain bitline, with respective tunnel window subregions of said source bitline in between, thereby isolating a column of memory cell-pairs from adjacent columns.