US5060047A
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High voltage semiconductor device
Assignee: Semiconductor Components Industries LLC
•
Filing: 1990-12-24
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Granted: 1991-10-22
•
Expires: 2010-12-24
Abstract
Abstract This invention relates to a high voltage semiconductor device comprising: a substrate (44); an epitaxial region (46) on said substrate including a doped electrode region (48) and a doped isolation region (50), said doped electrode region and said doped isolation region being separated by a first distance (54); an isolation layer (56) on part of said epitaxial region between said doped isolation region and said doped electrode region, said isolation layer covering a portion of the end of said doped electrode region; a first polycrystalline semiconductor layer (60) on said isolation layer; and a metallization layer (68,74), said high voltage semiconductor device being characterized by: a second polycrystalline semiconductor layer (40) on said first polycrystalline semiconductor layer.
Inventors
- 👤 Denis Jaume
- 👤 Andre P. Lavigne
- 👤 Georges Charitat
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:01
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D64/00; H10D64/111; H10D64/115; H10D64/118
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
126 words
A semiconductor device comprising: a substrate; a semiconductor region on the substrate including a doped electrode region and a doped isolation region, wherein the doped electrode region and the doped isolation region are separated by a first distance; an isolation layer on part of the semiconductor region between the doped isolation region and the doped electrode region, the isolation layer covering a portion of an end of the doped electrode region; a first polycrystalline semiconductor layer of a first resistivity on the isolation layer; a second polycrystalline semiconductor layer of a second resistivity different than the first resistivity on the first polycrystalline semiconductor layer, wherein the second resistivity exceeds the first resistivity; and a metallization layer extending at least partly over the second polycrystalline semiconductor layer.
Claim 2
Dependent Claim
126 words
A semiconductor device comprising: a substrate; a semiconductor region on the substrate including a doped electrode region and a doped isolation region, wherein the doped electrode region and the doped isolation region are separated by a first distance; an isolation layer on part of the semiconductor region between the doped isolation region and the doped electrode region, the isolation layer covering a portion of an end of the doped electrode region; a first polycrystalline semiconductor layer of a first resistivity on the isolation layer; a second polycrystalline semiconductor layer of a second resistivity different than the first resistivity on the first polycrystalline semiconductor layer, wherein the second resistivity exceeds the first resistivity; and a metallization layer extending at least partly over the second polycrystalline semiconductor layer.
Claim 3
Dependent Claim
20 words
The semiconductor device of claim 1 wherein the first resistivity is greater than or equal to about 10 8 ohm-cm.
Claim 4
Dependent Claim
21 words
The semiconductor device of claim 2 wherein the second resistivity is is greater than or equal to about 10 11 ohm-cm.
Claim 5
Dependent Claim
18 words
The semiconductor device of claim 1 wherein the first distance is in the range of about 150-225 micrometers.
Claim 6
Dependent Claim
137 words
A semiconductor device comprising: a substrate; a semiconductor region on the substrate including a doped electrode region and a doped isolation region, wherein the doped electrode region and the doped isolation region are separated by a first distance; an isolation layer on part of the semiconductor region between the doped isolation region and the doped electrode region, the isolation layer covering a portion of an end of the doped electrode region; a first polycrystalline semiconductor layer of a first resistivity on the isolation layer; a second polycrystalline semiconductor layer of a second resistivity different than the first resistivity on the first polycrystalline semiconductor layer; and a metallization layer extending at least partly over the second polycrystalline semiconductor layer, wherein the first and second polycrystalline semiconductor layers comprise silicon having, respectively, first and second percentage concentrations of oxygen
Claim 7
Dependent Claim
137 words
A semiconductor device comprising: a substrate; a semiconductor region on the substrate including a doped electrode region and a doped isolation region, wherein the doped electrode region and the doped isolation region are separated by a first distance; an isolation layer on part of the semiconductor region between the doped isolation region and the doped electrode region, the isolation layer covering a portion of an end of the doped electrode region; a first polycrystalline semiconductor layer of a first resistivity on the isolation layer; a second polycrystalline semiconductor layer of a second resistivity different than the first resistivity on the first polycrystalline semiconductor layer; and a metallization layer extending at least partly over the second polycrystalline semiconductor layer, wherein the first and second polycrystalline semiconductor layers comprise silicon having, respectively, first and second percentage concentrations of oxygen
Claim 8
Dependent Claim
19 words
The semiconductor device of claim 5 wherein the first polycrystalline semiconductor layer comprises polycrystalline silicon with about 12% oxygen.
Claim 9
Dependent Claim
19 words
The semiconductor device of claim 5 wherein the second polycrystalline semiconductor layer comprises polycrystalline silicon with about 25-30% oxygen.
Claim 10
Dependent Claim
143 words
A semiconductor device comprising: a substrate; a semiconductor region on the substrate including a doped electrode region and a doped isolation region, wherein the doped electrode region and the doped isolation region are separated by a first distance; an isolation layer on part of the semiconductor region between the doped isolation region and the doped electrode region, the isolation layer covering a portion of an end of the doped electrode region; a first polycrystalline semiconductor layer of a first resistivity on the isolation layer; a second polycrystalline semiconductor layer of a second resistivity different than the first resistivity on the first polycrystalline semiconductor layer; and a metallization layer extending at least partly over the second polycrystalline semiconductor layer, wherein the first polycrystalline semiconductor layer has a first thickness and the second polycrystalline semiconductor layer has a second thickness less than the first thickness.
Claim 11
Dependent Claim
143 words
A semiconductor device comprising: a substrate; a semiconductor region on the substrate including a doped electrode region and a doped isolation region, wherein the doped electrode region and the doped isolation region are separated by a first distance; an isolation layer on part of the semiconductor region between the doped isolation region and the doped electrode region, the isolation layer covering a portion of an end of the doped electrode region; a first polycrystalline semiconductor layer of a first resistivity on the isolation layer; a second polycrystalline semiconductor layer of a second resistivity different than the first resistivity on the first polycrystalline semiconductor layer; and a metallization layer extending at least partly over the second polycrystalline semiconductor layer, wherein the first polycrystalline semiconductor layer has a first thickness and the second polycrystalline semiconductor layer has a second thickness less than the first thickness.
Claim 12
Dependent Claim
19 words
The semiconductor device of claim 8 wherein the first and second thicknesses are in the ratio of about 2:1.
Claim 13
Dependent Claim
18 words
The semiconductor device of claim 9 wherein the second thickness is in the range of about 150-300 nanometers.
Claim 14
Dependent Claim
148 words
A semiconductor device comprising: a substrate; a semiconductor region on the substrate including a doped electrode region and a doped isolation region, wherein the doped electrode region and the doped isolation region are separated by a first distance; an isolation layer on part of the semiconductor region between the doped isolation region and the doped electrode region, the isolation layer covering a portion of an end of the doped electrode region; a first polycrystalline semiconductor layer of a first resistivity on the isolation layer; a second polycrystalline semiconductor layer of a second resistivity different than the first resistivity on the first polycrystalline semiconductor layer; and a metallization layer extending at least partly over the second polycrystalline semiconductor layer, wherein the metallization layer has a first part that contacts part of the doped isolation region and extends partly across the second polycrystalline semiconductor layer beyond the doped isolation region.
Claim 15
Dependent Claim
148 words
A semiconductor device comprising: a substrate; a semiconductor region on the substrate including a doped electrode region and a doped isolation region, wherein the doped electrode region and the doped isolation region are separated by a first distance; an isolation layer on part of the semiconductor region between the doped isolation region and the doped electrode region, the isolation layer covering a portion of an end of the doped electrode region; a first polycrystalline semiconductor layer of a first resistivity on the isolation layer; a second polycrystalline semiconductor layer of a second resistivity different than the first resistivity on the first polycrystalline semiconductor layer; and a metallization layer extending at least partly over the second polycrystalline semiconductor layer, wherein the metallization layer has a first part that contacts part of the doped isolation region and extends partly across the second polycrystalline semiconductor layer beyond the doped isolation region.
Claim 16
Dependent Claim
42 words
The semiconductor device of claim 11 wherein the metallization layer has a second part which contacts the doped electrode region and extends partly over the second polycrystalline semiconductor region to within about 40-120 micrometers of the end of the doped electrode region.
Claim 17
Dependent Claim
26 words
The semiconductor device of claim 12 wherein the first and second parts of the metallization are separated by a portion of the second polycrystalline semiconductor layer.
Claim 18
Dependent Claim
73 words
An electronic device comprising a single crystal semiconductor having first and second oppositely doped regions extending to a principal surface of the semiconductor and separated at the surface by a first distance, a dielectric on the principal surface extending at least between the first and second doped regions, a first oxygen doped polycrystalline semiconductor over the dielectric, and a second more heavily oxygen doped polycrystalline semiconductor over the first oxygen doped polycrystalline semiconductor.
Claim 19
Dependent Claim
73 words
An electronic device comprising a single crystal semiconductor having first and second oppositely doped regions extending to a principal surface of the semiconductor and separated at the surface by a first distance, a dielectric on the principal surface extending at least between the first and second doped regions, a first oxygen doped polycrystalline semiconductor over the dielectric, and a second more heavily oxygen doped polycrystalline semiconductor over the first oxygen doped polycrystalline semiconductor.
Claim 20
Dependent Claim
48 words
The device of claim 14 further comprising a metallization having a first part contacting the first doped region and extending partly above the second oxygen doped polycrystalline semiconductor and a separate second part contacting the second doped region and extending partly above the second oxygen doped polycrystalline semiconductor.
Claim 21
Dependent Claim
35 words
The device of claim 15 wherein the first part of the metallization extends over the second oxygen doped polycrystalline semiconductor but not beyond an end of the first doped region facing the second doped region.
Claim 22
Dependent Claim
39 words
The device of claim 14 wherein the first oxygen doped polycrystalline semiconductor has a resistivity of at least about 10 8 ohm-cm and the second oxygen doped polycrystalline semiconductor has a resistivity of at least about 10 11 ohm-cm.
Claim 23
Dependent Claim
131 words
An electronic device comprising a single crystal semiconductor having first and second oppositely doped regions extending to a principal surface of the semiconductor and separated at the surface by a first distance, a dielectric on the principal surface extending at least between the first and second doped regions, a first oxygen doped polycrystalline semiconductor over the dielectric, and a second oxygen doped polycrystalline semiconductor over the first oxygen doped polycrystalline semiconductor, and wherein the first part of the metallization extends over the second oxygen doped polycrystalline semiconductor but not beyond an end of the first doped region facing the second doped region, and wherein the first part of the metallization extends over the second oxygen doped polycrystalline semiconductor to within about 40-120 micrometers of the end of the first doped region.
Claim 24
Dependent Claim
131 words
An electronic device comprising a single crystal semiconductor having first and second oppositely doped regions extending to a principal surface of the semiconductor and separated at the surface by a first distance, a dielectric on the principal surface extending at least between the first and second doped regions, a first oxygen doped polycrystalline semiconductor over the dielectric, and a second oxygen doped polycrystalline semiconductor over the first oxygen doped polycrystalline semiconductor, and wherein the first part of the metallization extends over the second oxygen doped polycrystalline semiconductor but not beyond an end of the first doped region facing the second doped region, and wherein the first part of the metallization extends over the second oxygen doped polycrystalline semiconductor to within about 40-120 micrometers of the end of the first doped region.
Claim 25
Dependent Claim
97 words
An electronic device comprising a single crystal semiconductor having first and second oppositely doped regions extending to a principal surface of the semiconductor and separated at the surface by a first distance, a dielectric on the principal surface extending at least between the first and second doped regions, a first oxygen doped polycrystalline semiconductor over the dielectric, and a second oxygen doped polycrystalline semiconductor over the first oxygen doped polycrystalline semiconductor, and wherein the first oxygen doped polycrystalline semiconductor has a first percentage of oxygen and the second oxygen doped polycrystalline semiconductor has a higher percentage oxygen.
Claim 26
Dependent Claim
97 words
An electronic device comprising a single crystal semiconductor having first and second oppositely doped regions extending to a principal surface of the semiconductor and separated at the surface by a first distance, a dielectric on the principal surface extending at least between the first and second doped regions, a first oxygen doped polycrystalline semiconductor over the dielectric, and a second oxygen doped polycrystalline semiconductor over the first oxygen doped polycrystalline semiconductor, and wherein the first oxygen doped polycrystalline semiconductor has a first percentage of oxygen and the second oxygen doped polycrystalline semiconductor has a higher percentage oxygen.
Claim 27
Dependent Claim
16 words
The device of claim 19 wherein the second oxygen doped polycrystalline semiconductor has about 25-30% oxygen.
References Cited (Backward Citations)
US4409606A
Cited
US4419685A
Cited
US4516147A
Cited
US4583106A
Cited
US4647958A
Cited
US4805004A
Cited
US4879252A
Cited
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