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US5056702A
Expired / Lapsed
US
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Method of manufacturing a semiconductor device
Assignee: Toshiba Corp
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Filing: 1989-10-10
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Granted: 1991-10-15
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Expires: 2009-10-10
Abstract
Abstract A method of manufacturing a semiconductor device comprising a ceramics cylinder, a metal seal member closing an open end of the cylinder, a semiconductor element located within the cylinder and having electrodes, and leads or electrodes connected to the electrodes of the semiconductor element and extending from the cylinder. The method comprises the steps of coating powder of active metal consisting of Ti and/or Zr on the end face of the ceramics cylinder without heating the ceramics cylinder, in an amount of 0.1 mg/cm 2 to 10 mg/cm 2 , mounting a layer of brazing filler metal on the end face of the ceramics cylinder, which have been coated with the powder of the active metal, placing the metal seal member on the layer of brazing filler metal, and heating the ceramics cylinder, the metal seal member, and the layer of brazing filler metal, thereby melting the layer of brazing filler metal and, thus, brazing the metal seal member to the open end of the ceramics cylinder.
Inventors
- 👤 Masako Nakahashi
- 👤 Makoto Shirokane
- 👤 Hiromitsu Takeda
- 👤 Tatsuo Yamazaki
- 👤 Tsutomu Okutomi
- 👤 Shozi Niwa
- 👤 Mikio Okawa
- 👤 Mitsutaka Homma
- 👤 Seiichi Suenaga
- 👤 Shigeru Miyakawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 17:27
CPC Classifications
H; H01; H01H; H01H33/00; H01H33/60; H01H33/66; H01H33/662; H01H33/66207; C; C04; C04B; C04B37/00; C04B37/02; C04B37/023; C04B37/026; C04B2235/00; C04B2235/65; C04B2235/658; C04B2235/6581; C04B2237/00; C04B2237/02; C04B2237/12; C04B2237/125; C04B2237/126; C04B2237/127; C04B2237/30; C04B2237/32; C04B2237/34; C04B2237/343; C04B2237/40; C04B2237/405; C04B2237/406; C04B2237/407; C04B2237/50; C04B2237/70; C04B2237/708; C04B2237/76; C04B2237/765; C04B2237/80; C04B2237/84; H01H2033/66215; H01H33/66261; H01H2033/66276; H10; H10W; H10W72/00; H10W72/50; H10W72/531; H10W72/536; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49146
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
200 words
A method of manufacturing an airtight semiconductor device comprising a ceramic cylinder, a metal seal member closing an open end of the cylinder, a semiconductor element located within the cylinder and having electrodes, and leads or electrodes connected to the electrodes of the semiconductor element and extending from the cylinder, said method comprising the steps of: coating powder of active metal consisting of Ti and/or Zr on the end face of said ceramic cylinder without heating said ceramic cylinder, in an amount of 0.1 mg/cm 2 to 10 mg/cm 2 ; mounting a layer of brazing filler metal on the end face of said ceramic cylinder, which has been coated with the powder of the active metal; placing said metal seal member selected from the group consisting of Mo, W, an alloy of Fe and Ni, and alloy of Fe, Ni and Co, an alloy of Fe, Ni and Mn, and Cu composites thereof on said layer of brazing filler metal; and heating said ceramic cylinder, said metal seal member, and said layer of brazing filler metal, thereby melting said layer of brazing filler metal and, thus, brazing said metal seal member to the open end of said ceramic cylinder.
Claim 2
Independent Claim
200 words
A method of manufacturing an airtight semiconductor device comprising a ceramic cylinder, a metal seal member closing an open end of the cylinder, a semiconductor element located within the cylinder and having electrodes, and leads or electrodes connected to the electrodes of the semiconductor element and extending from the cylinder, said method comprising the steps of: coating powder of active metal consisting of Ti and/or Zr on the end face of said ceramic cylinder without heating said ceramic cylinder, in an amount of 0.1 mg/cm 2 to 10 mg/cm 2 ; mounting a layer of brazing filler metal on the end face of said ceramic cylinder, which has been coated with the powder of the active metal; placing said metal seal member selected from the group consisting of Mo, W, an alloy of Fe and Ni, and alloy of Fe, Ni and Co, an alloy of Fe, Ni and Mn, and Cu composites thereof on said layer of brazing filler metal; and heating said ceramic cylinder, said metal seal member, and said layer of brazing filler metal, thereby melting said layer of brazing filler metal and, thus, brazing said metal seal member to the open end of said ceramic cylinder.
Claim 3
Independent Claim
147 words
A method of manufacturing a semiconductor device comprising a ceramic cylinder, a metal seal member closing an open end of the cylinder, a semiconductor element located within the cylinder and having electrodes, and leads or electrodes connected to the electrodes of the semiconductor element and extending from the cylinder, said method comprising the steps of: mounting or depositing a layer of active metal consisting of Ti and/or Zr on the end face of said ceramic cylinder; mounting or depositing a layer of brazing filler metal on said layer of active metal; placing said metal seal member on said layer of brazing filler metal; and heating said ceramic cylinder, said metal seal member, said layer of active metal and said layer of brazing filler metal, thereby melting said layer of brazing filler metal and, thus, brazing said metal seal member to the open ends of said ceramic cylinder.
Claim 4
Independent Claim
147 words
A method of manufacturing a semiconductor device comprising a ceramic cylinder, a metal seal member closing an open end of the cylinder, a semiconductor element located within the cylinder and having electrodes, and leads or electrodes connected to the electrodes of the semiconductor element and extending from the cylinder, said method comprising the steps of: mounting or depositing a layer of active metal consisting of Ti and/or Zr on the end face of said ceramic cylinder; mounting or depositing a layer of brazing filler metal on said layer of active metal; placing said metal seal member on said layer of brazing filler metal; and heating said ceramic cylinder, said metal seal member, said layer of active metal and said layer of brazing filler metal, thereby melting said layer of brazing filler metal and, thus, brazing said metal seal member to the open ends of said ceramic cylinder.
Claim 5
Dependent Claim
23 words
The method according to claim 2, wherein said layer of the active metal is formed by means of either vacuum evaporation or sputtering.
Claim 6
Dependent Claim
18 words
The method according to claim 2, wherein said layer of the active metal is a sheet of foil.
Claim 7
Independent Claim
125 words
A method of manufacturing of semiconductor device comprising a ceramic cylinder, a metal seal member closing an open end of the cylinder, a semiconductor element located within the cylinder and having electrodes, and leads or electrodes element and extending from the cylinder, said method comprising the steps of: mounting or depositing a layer of brazing filler metal which contains active metal consisting of Ti and/or Zr on the end face of said ceramic cylinder; placing said metal seal member on said layer of brazing filler metal; and heating said ceramic cylinder, said metal seal member, and said layer of brazing filler metal, thereby melting said layer of brazing filler metal and, thus, brazing said metal seal member to the open end of said ceramic cylinder.
Claim 8
Independent Claim
125 words
A method of manufacturing of semiconductor device comprising a ceramic cylinder, a metal seal member closing an open end of the cylinder, a semiconductor element located within the cylinder and having electrodes, and leads or electrodes element and extending from the cylinder, said method comprising the steps of: mounting or depositing a layer of brazing filler metal which contains active metal consisting of Ti and/or Zr on the end face of said ceramic cylinder; placing said metal seal member on said layer of brazing filler metal; and heating said ceramic cylinder, said metal seal member, and said layer of brazing filler metal, thereby melting said layer of brazing filler metal and, thus, brazing said metal seal member to the open end of said ceramic cylinder.
Claim 9
Dependent Claim
24 words
The method according to claim 5, wherein said layer of the brazing filler metal is formed by means of either vacuum evaporation or sputtering.
Claim 10
Dependent Claim
19 words
The method according to claim 5, wherein said layer of the brazing filler metal is a sheet of foil.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-10-14 | 1995-04-15 | 1995-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-14 | 1999-04-15 | 1999-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-14 | 2003-04-15 | 2003-10-15 | $7700.00 | Window Closed / Lapsed |