US4611745A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for preparing highly heat-conductive substrate and copper wiring sheet usable in the same
Assignee: Toshiba Corp
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Filing: 1985-01-29
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Granted: 1986-09-16
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Expires: 2005-01-29
Abstract
Abstract A method for preparing a highly heat conductive substrate which comprises interposing an active layer with a thickness of 0.5 to 10 μm comprising silver (Ag) and an active metal selected from the group consisting of titanium, zirconium and hafnium, and also copper (Cu) optionally, between an aluminium nitride (AlN) substrate and a copper member; and joining said aluminium nitride (AlN) substrate and said copper (Cu) member with each other by heating. A copper wiring sheet comprising the above active layer is also usable in the method.
Inventors
- 👤 Masako Nakahashi
- 👤 Makoto Shirokane
- 👤 Tatsuo Yamazaki
- 👤 Hisashi Yoshino
- 👤 Akio Hori
- 👤 Hiromitsu Takeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 03:30
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/622; C04B35/64; C04B35/645; B; B23; B23K; B23K35/00; B23K35/22; B23K35/24; B23K35/26; B23K35/268; B32; B32B; B32B15/00; B32B15/01; B32B15/018; C04B37/00; C04B37/02; C04B37/023; C04B37/026; C22; C22C; C22C11/00; C22C11/06; C22C14/00; C22C5/00; C22C5/06; C22C9/00; H; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H05K3/00; H05K3/38; H10; H10W; H10W40/00; H10W40/01; H10W40/03; H10W40/037; H10W40/20; H10W40/25; H10W40/255; H10W70/00; H10W70/01; H10W70/02; H10W70/60; H10W70/67; H10W70/68; H10W70/6875; H10W72/00; H10W72/30; H10W99/00; B32B15/02; B32B15/20; B32B2250/00; B32B2250/44; B32B2255/00; B32B2255/20; B32B2255/205; B32B2307/00; B32B2307/30; B32B2307/302; B32B2307/304; B32B2307/70; B32B2307/732; B32B2457/00; B32B2457/14; B32B3/00; B32B3/10; B32B9/00; B32B9/005; B32B9/04; B32B9/041; C04B2235/00; C04B2235/65; C04B2235/658; C04B2235/6581; C04B2237/00; C04B2237/02; C04B2237/12; C04B2237/122; C04B2237/125; C04B2237/126; C04B2237/127; C04B2237/30; C04B2237/32; C04B2237/36; C04B2237/366; C04B2237/40; C04B2237/407; C04B2237/50; C04B2237/62; C04B2237/70; C04B2237/708; C04B2237/72; C04B2237/76; C04B2237/86
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
63 words
A method for preparing a highly heat conductive substrate which comprises interposing an active layer with a thickness of 0.5 to 10 μm comprising silver and an active metal selected from the group consisting of titanium, zirconium and hafnium, between an aluminium nitride substrate and a copper member; and joining said aluminium nitride substrate and said copper member with each other by heating.
Claim 2
Independent Claim
63 words
A method for preparing a highly heat conductive substrate which comprises interposing an active layer with a thickness of 0.5 to 10 μm comprising silver and an active metal selected from the group consisting of titanium, zirconium and hafnium, between an aluminium nitride substrate and a copper member; and joining said aluminium nitride substrate and said copper member with each other by heating.
Claim 3
Dependent Claim
37 words
The method according to claim 1, wherein said active layer comprises a silver layer with a thickness of 0.2 to 9 μm, and a layer of said active metal with a thickness of 0.1 to 5 μm.
Claim 4
Dependent Claim
13 words
The method according to claim 2, wherein said active metal layer comprises titanium.
Claim 5
Dependent Claim
51 words
The method according to claim 1, wherein a Cu wiring sheet having said active layer provided on the surface of said copper member is joined to said aluminuim nitride substrate in such a manner so that the active layer on the copper member may be in contact with the AlN substrate.
Claim 6
Dependent Claim
37 words
The method according to claim 4, wherein said active layer comprises a silver layer with a thickness of 0.2 to 9 μm, and a layer of said active metal with a thickness of 0.1 to 5 μm.
Claim 7
Dependent Claim
13 words
The method according to claim 5, wherein said active metal layer comprises titanium.
Claim 8
Dependent Claim
13 words
The method according to claim 1, wherein said active metal further comprises copper.
Claim 9
Dependent Claim
20 words
The method according to claim 7, wherein said active metal comprises a copper layer having a thickness of ≦9 μm.
Claim 10
Dependent Claim
23 words
The method according to claim 1, wherein said interposing step comprises sputtering said silver and said active metal onto said aluminum nitride substrate.
Claim 11
Dependent Claim
24 words
The method according to claim 1, wherein said interposing step comprises vacuum evaporating said silver and said active metal onto said aluminum nitride substrate.
Claim 12
Dependent Claim
22 words
The method according to claim 1, wherein said interposing step comprises sputtering said silver and said active metal onto said copper member.
Claim 13
Dependent Claim
23 words
The method according to claim 1, wherein said interposing step comprises vacuum evaporating said silver and said active metal onto said copper member.
References Cited (Backward Citations)
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