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US5053255A
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Chemical vapor deposition (CVD) process for the thermally depositing silicon carbide films onto a substrate
Assignee: Olin Corp
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Filing: 1990-07-13
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Granted: 1991-10-01
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Expires: 2010-07-13
Abstract
Abstract A thermal CVD process for forming silicon carbide-type films onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane vapor into a CVD reaction zone containing said substrate on which a silicon carbide film is to be formed; (b) maintaining the temperature of said zone and said substrate at about 400° C. to about 1,100° C.; (c) maintaining the pressure in said zone at about 0.1 to about 10 torr; and (d) passing said vapor into contact with said substrate for a period of time sufficient to form a silicon carbide-type film thereon.
Inventors
- 👤 Herman J. Boeglin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:59
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/32; C23C16/325
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
93 words
A thermal CVD process for forming silicon carbide-type films onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane vapor into a CVD reaction zone containing said substrate on which a silicon carbide film is to be formed; (b) maintaining the temperature of said zone and said substrate at about 400° C. to about 1,100° C.; (c) maintaining the Pressure in said zone at about 0.1 to about 10 torr; and (d) Passing said vapor into contact with said substrate for a period of time sufficient to form a silicon carbide-type film thereon.
Claim 2
Dependent Claim
93 words
A thermal CVD process for forming silicon carbide-type films onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane vapor into a CVD reaction zone containing said substrate on which a silicon carbide film is to be formed; (b) maintaining the temperature of said zone and said substrate at about 400° C. to about 1,100° C.; (c) maintaining the Pressure in said zone at about 0.1 to about 10 torr; and (d) Passing said vapor into contact with said substrate for a period of time sufficient to form a silicon carbide-type film thereon.
Claim 3
Dependent Claim
26 words
The thermal CVD process of claim 1, wherein the flow rate of said di-tert-butylsilane into said zone is from about 25 sccm to about 400 sccm.
Claim 4
Dependent Claim
24 words
The thermal CVD Process of claim 1, wherein said zone temperature and said substrate temperature are from about 500° C. to about 750° C.
Claim 5
Dependent Claim
20 words
The thermal CVD process of claim 1, wherein said zone pressure is from about 0.5 torr to about 5 torr.
Claim 6
Dependent Claim
24 words
The thermal CVD process of claim 1, wherein said di-tert-butylsilane film rate is formed at a rate from about 10 to about 500 Angstroms/minute.
Claim 7
Dependent Claim
36 words
The thermal CVD process of claim 1, wherein said substrate is selected from the group consisting of resin objects or films, glass objects or films, metal objects or films, GaAs layers, and semiconductor layers or devices.
Claim 8
Dependent Claim
127 words
A thermal CVD process for forming silicon carbide-type film onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane vapor into a CVD reaction zone containing said substrate on which a silicon carbide film is to be formed; the flow rate of said di-tert-butylsilane into said zone is from about 10 sccm to about 400 sccm; (b) maintaining the temperature of said zone and said substrate at about 500° C. to about 750° C.; (c) maintaining the pressure of said zone at about 0.5 torr to about 5 torr; and (d) passing said gas into contact with said substrate for a period of time sufficient to form a silicon carbide-type film thereon, the rate of film formation being at about 10 to about 500 Angstroms per minute.
Claim 9
Dependent Claim
127 words
A thermal CVD process for forming silicon carbide-type film onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane vapor into a CVD reaction zone containing said substrate on which a silicon carbide film is to be formed; the flow rate of said di-tert-butylsilane into said zone is from about 10 sccm to about 400 sccm; (b) maintaining the temperature of said zone and said substrate at about 500° C. to about 750° C.; (c) maintaining the pressure of said zone at about 0.5 torr to about 5 torr; and (d) passing said gas into contact with said substrate for a period of time sufficient to form a silicon carbide-type film thereon, the rate of film formation being at about 10 to about 500 Angstroms per minute.
Claim 10
Dependent Claim
21 words
The thermal CVD process of claim 7, wherein said flow rate of di-tert-butylsilane is from about 20 to about 200 sccm.
Claim 11
Dependent Claim
19 words
The thermal CVD process of claim 7, wherein said temperature is from about 550° C. to about 650° C.
Claim 12
Dependent Claim
18 words
The thermal CVD process of claim 7, wherein said Pressure is from about 0.75 to about 2.0 torr.
Claim 13
Dependent Claim
22 words
The thermal CVD process of claim 7, wherein said film formation rate is from about 15 to about 300 Angstroms per minute.
Claim 14
Dependent Claim
36 words
The thermal CVD process of claim 7, wherein said substrate is selected from the group consisting of resin objects or films, glass objects of films, metal objects or films, GaAs layers, and semiconductor layers or devices.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-09-30 | 1995-04-01 | 1995-10-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-30 | 1999-04-01 | 1999-10-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-30 | 2003-04-01 | 2003-10-01 | $7700.00 | Window Closed / Lapsed |