US5051792A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitaxial intermetallic contact for compound for compound semiconductors
Assignee: STANFORD UNIVERSITY OTL LLC
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Filing: 1990-06-14
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Granted: 1991-09-24
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Expires: 2010-06-14
Abstract
Abstract A class of intermetallic compound contact materials for III-V semiconductors is obtained by depositing successively and concurrently a thin film of a transition metal and a Group III metal upon the semiconductor and annealing the resultant structure, so resulting in the formation of a monocrystalline intermetallic contact. The contacts are stable at temperatures ranging from 600-900 DEG C. and may be fabricated by conventional vacuum deposition.
Inventors
- 👤 Timothy D. Sands
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 08:57
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
110 words
Epitaxial gate field effect transistor comprising: (a) a gate contact comprising an epitaxial layer of a transition metal aluminide, said aluminide comprising a 1:1 atomic ratio of aluminum to transition metal, (b) a single crystal III-V semiconductor substrate on which the transition metal aluminide is deposited, said III-V substrate containing a conducting channel below the gate contact, (c) source ohmic contact making contact to the conductive channel on one side of the gate contact and separated from the gate contact, and (d) drain ohmic contact to the conductive channel on the side of the gate contact opposite the source ohmic contact, said drain contact being separated from the gate contact.
Claim 2
Dependent Claim
110 words
Epitaxial gate field effect transistor comprising: (a) a gate contact comprising an epitaxial layer of a transition metal aluminide, said aluminide comprising a 1:1 atomic ratio of aluminum to transition metal, (b) a single crystal III-V semiconductor substrate on which the transition metal aluminide is deposited, said III-V substrate containing a conducting channel below the gate contact, (c) source ohmic contact making contact to the conductive channel on one side of the gate contact and separated from the gate contact, and (d) drain ohmic contact to the conductive channel on the side of the gate contact opposite the source ohmic contact, said drain contact being separated from the gate contact.
References Cited (Backward Citations)
JPS58148457A
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Cited
JPS60263460A
Cited
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US4847675A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-09-23 | 1995-03-25 | 1995-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-23 | 1999-03-25 | 1999-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-23 | 2003-03-25 | 2003-09-24 | $7700.00 | Window Closed / Lapsed |