US5051376A
Expired / Lapsed
US
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Method for producing semiconductor device and semiconductor device produced thereby
Assignee: Mitsubishi Chemical Corp
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Filing: 1990-01-11
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Granted: 1991-09-24
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Expires: 2010-01-11
Abstract
Abstract A method for producing a semiconductor device comprises the steps of: preparing a IIIb -Vb group compound single crystalline semiconductor substrate produced by a liquid encapsulated Czochralski process, the single crystalline semiconductor substrate having a carbon concentration of 1x1015 cm-3 or less, implanting conductive impurity ions into the single crystalline semiconductor substrate and then annealing, and a semiconductor device produced by this method.
Inventors
- 👤 Yutaka Yamada
- 👤 Toshihiko Ibuka
- 👤 Fumio Orito
- 👤 Yuichi Seta
- 👤 Shin-ichiro Kawabata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 02:21
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10P30/202; H10P30/206; H10P30/28; H10P95/00; H10P95/90; H10P95/904; Y; Y10; Y10S; Y10S438/00; Y10S438/934
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
86 words
A method for producing a semiconductor device comprising steps of: preparing a III b -V b group compound single crystalline semiconductor substrate produced by a liquid encapsulated Czochralski method, said single crystalline semiconductor substrate having a carbon concentration of 1×10 15 cm -3 or less, implanting conductive impurity ions into said single crystalline semiconductor substrate, annealing at a temperature of about 800° to about 1000° for about 2 to about 15 minutes, and cooling to 600° C. or less at a cooling rate of 0.29° C./sec.
Claim 2
Independent Claim
86 words
A method for producing a semiconductor device comprising steps of: preparing a III b -V b group compound single crystalline semiconductor substrate produced by a liquid encapsulated Czochralski method, said single crystalline semiconductor substrate having a carbon concentration of 1×10 15 cm -3 or less, implanting conductive impurity ions into said single crystalline semiconductor substrate, annealing at a temperature of about 800° to about 1000° for about 2 to about 15 minutes, and cooling to 600° C. or less at a cooling rate of 0.29° C./sec.
Claim 3
Dependent Claim
30 words
A method according to claim 1, wherein said III b -V b group compound semiconductor is selected from groups consisting of GaAs, Ga 1-x In x As (0.001≦x≦0.01), and InP.
Claim 4
Dependent Claim
27 words
A method according to claim 1, wherein the specific resistivity of said substrate prior to the implanting and annealing steps is 1×10 5 to 1×10 7 Ω·cm.
Claim 5
Dependent Claim
20 words
A method according to claim 1, wherein the specific resistivity of the annealed substrate is 1×10 7 Ω·cm or more.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-09-23 | 1995-03-25 | 1995-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-23 | 1999-03-25 | 1999-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-23 | 2003-03-25 | 2003-09-24 | $7700.00 | Window Closed / Lapsed |