Process for determining the focussing of a photolithographic apparatus

Claim 2

A process for determining the focussing of a photolithographic apparatus on a resist-coated layer, comprising the following steps: insolating the resist by a test pattern, successively in various places, a different focussing being carried out for each insolation, developing the resist, heating the wafer up to a temperature higher than the vitreous transition temperature of the resist, and observing the wafer for determing the optimal insolation and adopting the corresponding setting for the apparatus.

Claim 3

A process according to claim 1 wherein the observation step is carried out through optical reflectometry.

Claim 4

A process according to claim 1 wherein the various focussing step correspond to incremental settings of the focussing with respect to an average setting.

Claim 5

A process according to claim 1 wherein the resist is a novolac resist.

Claim 6

In a process of manufacturing a semiconductor including a photoetching procedure for a resist layer including application of an insolation dose thereto, the improvement comprising: a method for determining whether the insolation dose applied to the resist layer is sufficient, comprising the steps of insolating the resist layer at a plurality of locations by a test pattern, each location being insolated at a different focussing setting; heating the resist layer above a vitreous transition point thereof in order to cause the resist layer to flow and to increase a thickness of a thin remanent layer of resist between image portions formed on the resist layer; visually identifying a region icluding visible contact holes free of the flowed resist material of increased thickness; and determining that a sufficient insolation dose is applied at the region having said visible contact holes free of the resist material.

Claim 7

In a process of manufacturing a semiconductor including a photoetching procedure for a resist layer including application of an insolation dose thereto, the improvement comprising: a method for determining whether the insolation dose applied to the resist layer is sufficient, comprising the steps of insolating the resist layer at a plurality of locations by a test pattern, each location being insolated at a different focussing setting; heating the resist layer above a vitreous transition point thereof in order to cause the resist layer to flow and to increase a thickness of a thin remanent layer of resist between image portions formed on the resist layer; visually identifying a region icluding visible contact holes free of the flowed resist material of increased thickness; and determining that a sufficient insolation dose is applied at the region having said visible contact holes free of the resist material.

Claim 8

In a process of manufacturing a semiconductor including a photoetching procedure for a resist layer including application of an insolation dose thereto wherein a mask image is focussed on the resist layer, the improvement comprising: a method for identifying accurate focussing of the image on the resist layer, comprising the steps of insolating the resist layer at a plurality of regions by a test pattern, each region being insolated at a different focussing setting; developing the mask image; heating the resist layer above a vitreous transition point thereof in order to cause the mask image developed in the resist layer to flow and to increase a thickness of any thin layer of resist remaining between portions of the mask image developed on the resist layer; optically identifying a region including visible contact holes free of the thickened resist material; and determining that the image is accurately focussed at the region having said visible contact holes free of the resist material.

Claim 9

In a process of manufacturing a semiconductor including a photoetching procedure for a resist layer including application of an insolation dose thereto wherein a mask image is focussed on the resist layer, the improvement comprising: a method for identifying accurate focussing of the image on the resist layer, comprising the steps of insolating the resist layer at a plurality of regions by a test pattern, each region being insolated at a different focussing setting; developing the mask image; heating the resist layer above a vitreous transition point thereof in order to cause the mask image developed in the resist layer to flow and to increase a thickness of any thin layer of resist remaining between portions of the mask image developed on the resist layer; optically identifying a region including visible contact holes free of the thickened resist material; and determining that the image is accurately focussed at the region having said visible contact holes free of the resist material.

Claim 10

A process of manufacturing a semiconductor as recited in claim 6, wherein said applying step comprises applying a plurality of test patterns to a plurality of locations on the resist for insolating the resist at said plurality of regions.

Claim 11

In a process of manufacturing a semiconductor having a photoetching procedure for a resist layer and including application of a test pattern to the resist layer and developing of the test pattern, the improvement comprising: a method for determining whether any resist material remains at predetermined portions of the developed test pattern on the resist layer, comprising the steps of insolating the resist layer at a plurality of locations by a test pattern, each location being insolated at a different focussing setting; heating the resist layer having the developed test pattern thereon above a vitreous transition point thereof in order to cause the test pattern developed in the resist layer to flow and to increase a thickness of a thin layer of resist remaining at said predetermined portions of the test pattern developed on the resist layer; observing by optic reflectometry a contrast between a first portion of the test pattern having resist material and one of the predetermined portions of the test pattern which are nominally free of resist material; and determining by the observed contrast whether resist material has been eliminated at the observed predetermined portion of the test pattern.

Claim 12

In a process of manufacturing a semiconductor having a photoetching procedure for a resist layer and including application of a test pattern to the resist layer and developing of the test pattern, the improvement comprising: a method for determining whether any resist material remains at predetermined portions of the developed test pattern on the resist layer, comprising the steps of insolating the resist layer at a plurality of locations by a test pattern, each location being insolated at a different focussing setting; heating the resist layer having the developed test pattern thereon above a vitreous transition point thereof in order to cause the test pattern developed in the resist layer to flow and to increase a thickness of a thin layer of resist remaining at said predetermined portions of the test pattern developed on the resist layer; observing by optic reflectometry a contrast between a first portion of the test pattern having resist material and one of the predetermined portions of the test pattern which are nominally free of resist material; and determining by the observed contrast whether resist material has been eliminated at the observed predetermined portion of the test pattern.

Claim 13

A process of determining an accurate focussing setting for a photolithographic procedure for a resist layer, comprising: insolating the resist layer at a plurality of locations by a test pattern, each location being insolated at a different focussing setting; developing the test pattern; and determining whether any resist material remains at predetermined portions of the developed test pattern on the resist layer, wherein said predetermined portions of the test pattern are nominally free of resist material; said determining step comprising the further steps of: heating the resist layer having the developed test pattern thereon above a vitreous transition point thereof in order to cause the developed test pattern to flow and to increase a thickness of a thin layer of resist remaining at any of said predetermined portions of the developed test pattern; observing by optical reflectometry a contrast between a first portion of the test pattern having resist material and one of the predetermined portions of the test pattern nominally free of resist material; and determining by the observed contrast whether any resist material remains at the observed predetermined portion of the test pattern, whereby an optimal focussing setting is determined as the setting used for insolating the test pattern for a predetermined portion wherein no resist material is observed.

Claim 14

A process of determining an accurate focussing setting for a photolithographic procedure for a resist layer, comprising: insolating the resist layer at a plurality of locations by a test pattern, each location being insolated at a different focussing setting; developing the test pattern; and determining whether any resist material remains at predetermined portions of the developed test pattern on the resist layer, wherein said predetermined portions of the test pattern are nominally free of resist material; said determining step comprising the further steps of: heating the resist layer having the developed test pattern thereon above a vitreous transition point thereof in order to cause the developed test pattern to flow and to increase a thickness of a thin layer of resist remaining at any of said predetermined portions of the developed test pattern; observing by optical reflectometry a contrast between a first portion of the test pattern having resist material and one of the predetermined portions of the test pattern nominally free of resist material; and determining by the observed contrast whether any resist material remains at the observed predetermined portion of the test pattern, whereby an optimal focussing setting is determined as the setting used for insolating the test pattern for a predetermined portion wherein no resist material is observed.

Claim 15

A process of determining an accurate focussing setting as recited in claim 9, wherein said insolating step comprises insolating said resist layer at said plurality of locations by successive incremental variations of said focussing setting, and comprising the further step of selecting as the optimal focussing setting the focussing setting for the first predetermined portion wherein resist material is not observed.