US5034337A — Method of making an integrated circuit that combi…

Claim 1

Independent Claim 168 words

A method for forming a semiconductor device, comprising the steps of: providing a semiconductor substrate having an impurity concentration of a first conductivity type; epitaxially growing a first semiconductor layer of said first conductivity type on a surface of said semiconductor substrate; selectively doping an impurity of a second conductivity type in said first semiconductor layer, so as to form a first high concentration buried region of the second conductivity type; epitaxially growing a second semiconductor layer of said second semiconductivity type on a surface of said first semiconductor layer in which said high concentration buried layer is formed; epitaxially growing a third semiconductor layer of said first conductivity type on a surface of said second semiconductor layer in which said second and third high concentration buried layers are formed; and selectively diffusing impurities of said first and second conductivity type from a main surface of said third semiconductor layer so as to form high concentration diffusion regions suitable for formation of semiconductor wells and semiconductor active regions.

Claim 2

Independent Claim 168 words

A method for forming a semiconductor device, comprising the steps of: providing a semiconductor substrate having an impurity concentration of a first conductivity type; epitaxially growing a first semiconductor layer of said first conductivity type on a surface of said semiconductor substrate; selectively doping an impurity of a second conductivity type in said first semiconductor layer, so as to form a first high concentration buried region of the second conductivity type; epitaxially growing a second semiconductor layer of said second semiconductivity type on a surface of said first semiconductor layer in which said high concentration buried layer is formed; epitaxially growing a third semiconductor layer of said first conductivity type on a surface of said second semiconductor layer in which said second and third high concentration buried layers are formed; and selectively diffusing impurities of said first and second conductivity type from a main surface of said third semiconductor layer so as to form high concentration diffusion regions suitable for formation of semiconductor wells and semiconductor active regions.

Claim 3

Dependent Claim 124 words

The method of claim 1, wherein said selectively diffusing step comprises the steps of: selectively diffusing an impurity of said second conductivity type to form first, second, third, and fourth high concentration diffusion regions in said main surface of said third semiconductor layer, said first and second diffusion regions being disposed within said fourth and fifth buried regions respectively and forming collector regions, said third and fourth regions forming emitter regions within the main surface of the third semiconductor layer; selectively diffusing an impurity of said first conductivity type to form a fifth high concentration diffusion region in said main surface of said third semiconductor layer, said fifth diffusion region being disposed between said third and fourth diffusion regions and forming a base region.

Claim 4

Dependent Claim 97 words

The method of making the semiconductor device of claim 1, further comprising the steps of: selectively doping an impurity of a second conductivity type in a surface of said second semiconductor layer so as to form second and third high concentration buried regions of said second conductivity type; and selectively doping an impurity of said second conductivity type in a surface of said third semiconductor layer to form fourth and fifth high concentration buried regions of said second conductivity type to be in contact with said respective surfaces of said second and third high concentration buried regions.

Claim 5

Dependent Claim 148 words

The method of making the semiconductor device of claim 3, further comprising the steps of: concurrently forming during formation of said first high concentration buried region a sixth high concentration buried region of said second conductivity type in said first semiconductor layer corresponding to an area for formation of a second active semiconductor device; concurrently forming during formation of said second and third high concentration buried regions seventh and eighth high concentration buried regions of said second conductivity type in said second semiconductor layer area corresponding to said second active semiconductor device; and concurrently forming during formation of said fourth and fifth high concentration buried regions ninth and tenth high concentration buried regions of said second conductivity type in said third semiconductor layer area corresponding to said second active semiconductor device to be in contact with said respective surfaces of said seventh and eighth high concentration buried regions.

Claim 6

Dependent Claim 214 words

The method of making the semiconductor device of claim 4, wherein said selectively diffusing step comprises the steps of: selectively diffusing an impurity of said second conductivity type to form first, second, third, fourth and fifth high concentration diffusion regions in said main surface of said third semiconductor layer, said first, second, third, and fourth diffusions being disposed in an area corresponding to a first active semiconductor device, said fifth diffusion being in an area corresponding to said second active semiconductor device, said first and second diffusion regions being disposed within said fourth and fifth buried regions respectively and forming collector regions, said third and fourth regions forming emitter regions, said fifth region forming a base region; selectively diffusing an impurity of said first conductivity type to form sixth, seventh and eighth high concentration diffusion regions in said main surface of said third semiconductor layer, said sixth diffusion region being disposed between said third and fourth diffusion regions and forming a base region, said seventh diffusion being disposed within said fifth diffused base region on the third epitaxial layer of the second active device region and forming an emitter region, said eighth diffusion being disposed in an area corresponding to the third epitaxy of said second active semiconductor device and forming a collector region.

Claim 7

Dependent Claim 45 words

The method of forming a semiconductor device as recited in claim 4, further comprising the steps of forming an eleventh high concentration buried region of said first conductivity type in said second and first semiconductor surface in contact with said sixth high concentration buried region.

Claim 8

Independent Claim 281 words

A method of forming a semiconductor device, comprising the steps: providing a semiconductor substrate having an impurity concentration of a first conductivity type; epitaxially growing a first semiconductor layer of said first conductivity type on a surface of said semiconductor substrate; epitaxially growing a second semiconductor layer of said second conductivity type on a surface of said first semiconductor layer; selectively doping an impurity of said first conductivity type in a surface of said second semiconductor layer to form at least two buried isolation regions for isolating and defining an area for formation of a first active device; selectively doping an impurity of a second conductivity type in a surface of said second semiconductor layer so as to form second and third high concentration buried regions of said second conductivity type; selectively doping an impurity of said first conductivity type in a surface of said second semiconductor layer so as to form a fourth high concentration buried region of said first conductivity type; epitaxially growing a third semiconductor layer of said first conductivity type on a surface of said second semiconductor layer in which said first, second, third and fourth high concentration buried layers are formed; selectively doping an impurity of said second conductivity type in a surface of said third semiconductor layer to form fifth and sixth high concentration buried regions of said second conductivity type to be in contact with said respective surfaces of said second and third high concentration buried regions; selectively diffusing impurities of said first and second conductivity type from a main surface of said third semiconductor layer so as to form high concentration diffusion regions suitable for formation of semiconductor wells and semiconductor active regions.

Claim 9

Independent Claim 281 words

A method of forming a semiconductor device, comprising the steps: providing a semiconductor substrate having an impurity concentration of a first conductivity type; epitaxially growing a first semiconductor layer of said first conductivity type on a surface of said semiconductor substrate; epitaxially growing a second semiconductor layer of said second conductivity type on a surface of said first semiconductor layer; selectively doping an impurity of said first conductivity type in a surface of said second semiconductor layer to form at least two buried isolation regions for isolating and defining an area for formation of a first active device; selectively doping an impurity of a second conductivity type in a surface of said second semiconductor layer so as to form second and third high concentration buried regions of said second conductivity type; selectively doping an impurity of said first conductivity type in a surface of said second semiconductor layer so as to form a fourth high concentration buried region of said first conductivity type; epitaxially growing a third semiconductor layer of said first conductivity type on a surface of said second semiconductor layer in which said first, second, third and fourth high concentration buried layers are formed; selectively doping an impurity of said second conductivity type in a surface of said third semiconductor layer to form fifth and sixth high concentration buried regions of said second conductivity type to be in contact with said respective surfaces of said second and third high concentration buried regions; selectively diffusing impurities of said first and second conductivity type from a main surface of said third semiconductor layer so as to form high concentration diffusion regions suitable for formation of semiconductor wells and semiconductor active regions.

Claim 10

Dependent Claim 129 words

The method of forming a semiconductor device as recited in claim 7, wherein said diffusion step comprises the steps of: selectively diffusing an impurity of said second conductivity type to form first and second high concentration diffusion regions in said main surface of said third semiconductor layer, said first and second diffusion regions being disposed within said fifth and sixth buried regions respectively and forming base regions; selectively diffusing an impurity of said first conductivity type to form a third high concentration diffusion region in said main surface of said third semiconductor layer, said third diffusion region forming a base region; and further including the step of forming a collector contact on a surface of said semiconductor substrate opposite the surface in which said first semiconductor layer is formed.

Claim 11

Dependent Claim 64 words

The method of forming a semiconductor device as recited in claim 8, further comprising the steps of: forming at least one bipolar analog transistor device on said third semiconductor layer, said analog device defining a second active device being isolated from said first active device to form a combined power transistor/analog transistor integrated circuit, wherein said first active device is a bipolar power transistor.

Claim 12

Dependent Claim 103 words

The method of forming a semiconductor device as recited in claim 7, wherein said diffusion step further comprises the steps of: forming fourth, fifth, and sixth high concentration diffusion regions of said second conductivity type, said fourth region providing a well region for formation of a first MOS transistor, said fifth and sixth regions forming respective source and drain regions for a second MOS transistor; and forming seventh and eighth high concentration diffusion regions of said first conductivity type, said seventh and eighth diffusions being disposed in said fourth diffusion region and forming respective source and drain regions for said first MOS transistor.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1994-07-22	1995-01-21	1995-07-23	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1998-07-22	1999-01-21	1999-07-23	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2002-07-22	2003-01-21	2003-07-23	$7700.00	Window Closed / Lapsed

Method of making an integrated circuit that combines multi-epitaxial power transistors with logic/analog devices

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