Patent US5032531A successfully refreshed from Google Patents.
US5032531A
Expired / Lapsed
US
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Method of manufacturing active matrix panel
Assignee: Hitachi Ltd
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Filing: 1989-07-07
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Granted: 1991-07-16
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Expires: 2009-07-07
Abstract
Abstract In a first manufacturing step of an active matrix liquid-crystal panel, a transparent conductor film and a metal film are sequentially accumulated on a substrate in this order so as to form a two-layer film. The two-layer film including the transparent conductor film and the metal film is subjected to photoetching to simultaneously form at least a pixel electrode (transparent conductor film) and a gate electrode (metal film) of a thin-film transistor according to a predetermined pattern. In a fabrication process near the end of the fabrication, when the source and drain electrodes of the thin-film transistors are formed, the metal film on the pixel electrode is simultaneously removed. Since the removal of the metal film protecting the pixel electrode is simultaneously achieved at a point near the final process, protection of the pixel electrode is guaranteed, thereby realizing improvement of the yielding and reduction of the production process.
Inventors
- 👤 Ken Tsutsui
- 👤 Toshihisa Tsukada
- 👤 Hideaki Yamamoto
- 👤 Yasuo Tanaka
- 👤 Haruo Matsumaru
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:56
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0231; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1343; G02F1/13439; G02F1/134309; G02F1/134336; G02F1/136; G02F1/1362; G02F1/1368; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D86/40; H10D86/60; G02F1/136213; G02F2201/00; G02F2201/12; G02F2201/123
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
137 words
An active matrix panel manufacturing method of manufacturing a liquid-crystal panel of an active matrix type wherein a two-layer film including a transparent conductor film and a metal film sequentially accumulated on a substrate is subjected to a work such that a pattern creation is simultaneously carried out at least at a location of a pixel electrode and at a location of a gate electrode of a thin-film transistor; wherein the metal film at the location of the pixel electrode is removed in a same working step, using a same mask, as a step of producing a source electrode and drain electrode of the thin-film transistor, the transparent conductor film forming the pixel electrode; and wherein a gate insulating film of the thin-film transistor is formed so as to extend to a position on the pixel electrode.
Claim 2
Dependent Claim
137 words
An active matrix panel manufacturing method of manufacturing a liquid-crystal panel of an active matrix type wherein a two-layer film including a transparent conductor film and a metal film sequentially accumulated on a substrate is subjected to a work such that a pattern creation is simultaneously carried out at least at a location of a pixel electrode and at a location of a gate electrode of a thin-film transistor; wherein the metal film at the location of the pixel electrode is removed in a same working step, using a same mask, as a step of producing a source electrode and drain electrode of the thin-film transistor, the transparent conductor film forming the pixel electrode; and wherein a gate insulating film of the thin-film transistor is formed so as to extend to a position on the pixel electrode.
Claim 3
Dependent Claim
171 words
An active matrix panel manufacturing method of manufacturing a liquid-crystal panel of an active matrix type wherein a two-layer film including a transparent conductor film and a metal film sequentially accumulated on a substrate is subjected to a work such that a pattern creation is simultaneously carried out at least at a location of a pixel electrode and at a location of a gate electrode of a thin-film transistor; wherein an unnecessary portion of a doped amorphous silicon film, which contains an impurity and which is accumulated on a side of a lower layer of a source wiring of the thin-film transistor, and the metal film at the location of the pixel electrode are removed in a same working step, using a same mask, as a step of producing a source electrode and a drain electrode of the thin-film transistor, the transparent conductor film forming the pixel electrode; and wherein a gate insulating film of the thin-film transistor is formed so as to extend to a position on the pixel electrode.
Claim 4
Dependent Claim
171 words
An active matrix panel manufacturing method of manufacturing a liquid-crystal panel of an active matrix type wherein a two-layer film including a transparent conductor film and a metal film sequentially accumulated on a substrate is subjected to a work such that a pattern creation is simultaneously carried out at least at a location of a pixel electrode and at a location of a gate electrode of a thin-film transistor; wherein an unnecessary portion of a doped amorphous silicon film, which contains an impurity and which is accumulated on a side of a lower layer of a source wiring of the thin-film transistor, and the metal film at the location of the pixel electrode are removed in a same working step, using a same mask, as a step of producing a source electrode and a drain electrode of the thin-film transistor, the transparent conductor film forming the pixel electrode; and wherein a gate insulating film of the thin-film transistor is formed so as to extend to a position on the pixel electrode.
Claim 5
Dependent Claim
205 words
An active matrix panel manufacturing method of manufacturing a liquid-crystal panel of an active matrix type wherein a two-layer film including a transparent conductor film and a metal film sequentially accumulated on a substrate is subjected to a work such that a pattern creation is simultaneously carried out at least at a location of a pixel electrode and at a location of a gate electrode of a thin-film transistor; wherein an unnecessary portion of a doped amorphous silicon film, which contains an impurity and which is accumulated on a side of a lower layer of a source wiring of the thin-film transistor, an unnecessary portion of an amorphous silicon film accumulated on a side of a lower layer of the doped amorphus silicon film and on a side of an upper layer of a gate insulation film, and the metal film at the location of the pixel electrode are removed in a same working step, using a same mask, as a step of producing a source electrode and a drain electrode of the thin-film transistor, the transparent conductor forming the pixel electrode, and wherein a gate insulating film of the thin-film transistor is formed so as to extend to a position on the pixel electrode.
Claim 6
Dependent Claim
205 words
An active matrix panel manufacturing method of manufacturing a liquid-crystal panel of an active matrix type wherein a two-layer film including a transparent conductor film and a metal film sequentially accumulated on a substrate is subjected to a work such that a pattern creation is simultaneously carried out at least at a location of a pixel electrode and at a location of a gate electrode of a thin-film transistor; wherein an unnecessary portion of a doped amorphous silicon film, which contains an impurity and which is accumulated on a side of a lower layer of a source wiring of the thin-film transistor, an unnecessary portion of an amorphous silicon film accumulated on a side of a lower layer of the doped amorphus silicon film and on a side of an upper layer of a gate insulation film, and the metal film at the location of the pixel electrode are removed in a same working step, using a same mask, as a step of producing a source electrode and a drain electrode of the thin-film transistor, the transparent conductor forming the pixel electrode, and wherein a gate insulating film of the thin-film transistor is formed so as to extend to a position on the pixel electrode.
Claim 7
Dependent Claim
43 words
An active matrix panel manufacturing method according to claim 1, wherein said pixel electrode includes the transparent conductor film in a central portion thereof and a two-layer film constituted by the transparent conductor film and the metal film in a periphery portion thereof.
Claim 8
Dependent Claim
43 words
An active matrix panel manufacturing method according to claim 2, wherein said pixel electrode includes the transparent conductor film in a central portion thereof and a two-layer film constituted by the transparent conductor film and the metal film in a periphery portion thereof.
Claim 9
Dependent Claim
43 words
An active matrix panel manufacturing method according to claim 3, wherein said pixel electrode includes the transparent conductor film in a central portion thereof and a two-layer film constituted by the transparent conductor film and the metal film in a periphery portion thereof.
Claim 10
Dependent Claim
45 words
An active matrix panel manufacturing method according to claim 3 wherein between said doped amorphous silicon film and said amorphous silicon film, there is disposed a protective film which comprises silicon as a primary component and which further comprises a compound at least including oxygen.
Claim 11
Dependent Claim
45 words
An active matrix panel manufacturing method according to claim 4 wherein between said doped amorphous silicon film and said amorphous silicon film, there is disposed a protective film which comprises silicon as a primary component and which further comprises a compound at least including oxygen.
Claim 12
Dependent Claim
44 words
An active matrix panel manufacturing method according to claim 1, wherein said work simultaneously producing the pixel electrode and the gate electrode and said work forming the source and drain electrodes are photoetching steps which are achieved by photolithography through use of photoresist masks.
Claim 13
Dependent Claim
44 words
An active matrix panel manufacturing method according to claim 2, wherein said work simultaneously producing the pixel electrode and the gate electrode and said work forming the source and drain electrodes are photoetching steps which are achieved by photolithography through use of photoresist masks.
Claim 14
Dependent Claim
44 words
An active matrix panel manufacturing method according to claim 3, wherein said work simultaneously producing the pixel electrode and the gate electrode and said work forming the source and drain electrodes are photoetching steps which are achieved by photolithography through use of photoresist masks.
Claim 15
Independent Claim
338 words
A method of manufacturing an active matrix panel having at least a thin-film transistor section and a pixel electrode section, comprising: a first step in which a transparent conductor film is accumulated on a glass substrate and then a lower conductive film is formed on the transparent conductor film such that a two-layer film including the transparent conductor film and the lower conductor film is formed, and the two-layer film is subject to photoetching so as to form a gate electrode of the thin-film transistor section and a pixel electrode of the pixel electrode section; a second step in which an insulator film, a semiconductor film, and a protective film are sequentially accumulated in this order, and the protective film is subjected to photoetching so as to be narrower than a width of the gate electrode of the thin-film transistor section, thereby forming a protective layer; a third step in which the insulator film is subjected to photoetching so as to form a gate insulator of the thin-film transistor section, and the semiconductor film is subjected to photoetching so as to be broader than the width of the gate electrode in a direction of a channel length and to be shorter than the gate electrode in a direction of a channel width; and a fourth step in which a doped semiconductor film containing an impurity, a first upper conductor film, and a second upper conductor film are sequentially accumulated in this order so as to form a three-layer film comprising the doped semiconductor film, the first upper conductor film, and the second upper conductor film, and the three-layer film is subjected to photoetching so as to form a drain electrode and a source electrode of the thin-film transistor section, and the three-layer film is removed from regions over the pixel electrode section, said regions being other than a contact portion between either one of the drain electrode and the source electrode and the pixel electrode, and wherein the lower conductor film is removed over the pixel electrode section.
Claim 16
Independent Claim
338 words
A method of manufacturing an active matrix panel having at least a thin-film transistor section and a pixel electrode section, comprising: a first step in which a transparent conductor film is accumulated on a glass substrate and then a lower conductive film is formed on the transparent conductor film such that a two-layer film including the transparent conductor film and the lower conductor film is formed, and the two-layer film is subject to photoetching so as to form a gate electrode of the thin-film transistor section and a pixel electrode of the pixel electrode section; a second step in which an insulator film, a semiconductor film, and a protective film are sequentially accumulated in this order, and the protective film is subjected to photoetching so as to be narrower than a width of the gate electrode of the thin-film transistor section, thereby forming a protective layer; a third step in which the insulator film is subjected to photoetching so as to form a gate insulator of the thin-film transistor section, and the semiconductor film is subjected to photoetching so as to be broader than the width of the gate electrode in a direction of a channel length and to be shorter than the gate electrode in a direction of a channel width; and a fourth step in which a doped semiconductor film containing an impurity, a first upper conductor film, and a second upper conductor film are sequentially accumulated in this order so as to form a three-layer film comprising the doped semiconductor film, the first upper conductor film, and the second upper conductor film, and the three-layer film is subjected to photoetching so as to form a drain electrode and a source electrode of the thin-film transistor section, and the three-layer film is removed from regions over the pixel electrode section, said regions being other than a contact portion between either one of the drain electrode and the source electrode and the pixel electrode, and wherein the lower conductor film is removed over the pixel electrode section.
Claim 17
Independent Claim
300 words
A method of manufacturing an active matrix panel having at least a thin-film transistor section and a pixel electrode section, comprising: a first step in which a transparent conductor film is accumulated on a glass substrate, a lower conductor film is formed on the transparent conductor film such that a two-layer film including the transparent conductor film and the lower conductor film is formed, and the two-layer film is subjected to photoetching so as to form a gate electrode of the thin-film transistor section and a pixel electrode of the pixel electrode section; a second step in which an insulator film, a semiconductor film, and a protective film are sequentially accumulated in this order, and the protective film is subjected to photoetching so as to be narrower than a width of the gate electrode of the thin-film transistor section, thereby forming a protective layer; a third step in which the semiconductor film and the insulator film are removed from a region associated with the pixel electrode section, said region being slightly narrower than the pixel electrode section; and a fourth step in which a doped semiconductor film containing an impurity and an upper conductor film are sequentially accumulated in this order, so as to form a two-layer film comprising the doped semiconductor film and the upper conductor film, and the two-layer film is subjected to photoetching so as to form a drain electrode and a source electrode of the thin-film transistor section and to remove the two-layer film from regions over the pixel electrode section, said regions being other than a contact portion between either one of the drain electrode and the source electrode and wherein the semiconductor film is subsequently subjected to photoetching so as to remove the lower conductor film in a region over the pixel electrode section.
Claim 18
Independent Claim
300 words
A method of manufacturing an active matrix panel having at least a thin-film transistor section and a pixel electrode section, comprising: a first step in which a transparent conductor film is accumulated on a glass substrate, a lower conductor film is formed on the transparent conductor film such that a two-layer film including the transparent conductor film and the lower conductor film is formed, and the two-layer film is subjected to photoetching so as to form a gate electrode of the thin-film transistor section and a pixel electrode of the pixel electrode section; a second step in which an insulator film, a semiconductor film, and a protective film are sequentially accumulated in this order, and the protective film is subjected to photoetching so as to be narrower than a width of the gate electrode of the thin-film transistor section, thereby forming a protective layer; a third step in which the semiconductor film and the insulator film are removed from a region associated with the pixel electrode section, said region being slightly narrower than the pixel electrode section; and a fourth step in which a doped semiconductor film containing an impurity and an upper conductor film are sequentially accumulated in this order, so as to form a two-layer film comprising the doped semiconductor film and the upper conductor film, and the two-layer film is subjected to photoetching so as to form a drain electrode and a source electrode of the thin-film transistor section and to remove the two-layer film from regions over the pixel electrode section, said regions being other than a contact portion between either one of the drain electrode and the source electrode and wherein the semiconductor film is subsequently subjected to photoetching so as to remove the lower conductor film in a region over the pixel electrode section.
Claim 19
Independent Claim
333 words
A method of manufacturing an active matrix panel having at least a thin-film transistor section and a pixel electrode section, comprising: a first step in which a transparent conductor film is accumulated on a glass substrate, a lower conductor film is formed on the transparent conductor film such that a two-layer film is formed, and the two-layer film is subjected to photoetching so as to form a gate electrode of the thin-film transistor section and a pixel electrode of the pixel electrode section; a second step in which an insulator film, a semiconductor film, and a protective film including Si x O y N z are sequentially accumulated in this order, and the protective film is subjected to photoetching so as to be narrower than a width of the gate electrode in the thin-film transistor section, thereby forming a protection layer; a third step in which the insulator film is removed from a region associated with the pixel electrode section, said region being slightly narrower than the pixel electrode section; and in which a doped semiconductor containing an impurity is accumulated, and is subjected to photoetching so as to be smaller than the source and drain electrodes in the thin-film transistor section and so as to remove a central portion thereof in the pixel electrode section, and that thereafter the semiconductor film undergoes photoetching in a successive fashion; and a fourth step in which a first upper conductor film and a second upper conductor film are sequentially accumulated in this order to form a two-layer film comprising the first and second upper conductor films, and the two-layer film is subjected to photoetching so as to form a drain electrode and a source electrode of the thin-film transistor section and to remove the two-layer film from regions over the pixel electrode section, said regions being other than a contact portion between either one of the drain electrode and the source electrode and the pixel electrode, and that thereafter the lower conductor film is removed.
Claim 20
Independent Claim
333 words
A method of manufacturing an active matrix panel having at least a thin-film transistor section and a pixel electrode section, comprising: a first step in which a transparent conductor film is accumulated on a glass substrate, a lower conductor film is formed on the transparent conductor film such that a two-layer film is formed, and the two-layer film is subjected to photoetching so as to form a gate electrode of the thin-film transistor section and a pixel electrode of the pixel electrode section; a second step in which an insulator film, a semiconductor film, and a protective film including Si x O y N z are sequentially accumulated in this order, and the protective film is subjected to photoetching so as to be narrower than a width of the gate electrode in the thin-film transistor section, thereby forming a protection layer; a third step in which the insulator film is removed from a region associated with the pixel electrode section, said region being slightly narrower than the pixel electrode section; and in which a doped semiconductor containing an impurity is accumulated, and is subjected to photoetching so as to be smaller than the source and drain electrodes in the thin-film transistor section and so as to remove a central portion thereof in the pixel electrode section, and that thereafter the semiconductor film undergoes photoetching in a successive fashion; and a fourth step in which a first upper conductor film and a second upper conductor film are sequentially accumulated in this order to form a two-layer film comprising the first and second upper conductor films, and the two-layer film is subjected to photoetching so as to form a drain electrode and a source electrode of the thin-film transistor section and to remove the two-layer film from regions over the pixel electrode section, said regions being other than a contact portion between either one of the drain electrode and the source electrode and the pixel electrode, and that thereafter the lower conductor film is removed.
Claim 21
Independent Claim
182 words
A method of manufacturing an active matrix panel having at least a thin-film transistor section and a pixel electrode section, comprising: a first step for accumulating a transparent conductor film on a glass substrate and forming a lower conductor film on the transparent conductor film, and photoetching so as to form a gate electrode of the thin-film transistor section and a pixel electrode of the pixel electrode section; a second step for accumulating a gate insulator film, an amorphous silicon film, and a protective film in this order, and photoetching the protective film so as to form a protective layer; a third step for removing the amorphous silicon film and the gate insulator film from the pixel electrode section; and a fourth step for accumulating an impurity-doped semiconductor film and an upper conductor film in this order, and photoetching so as to form a drain electrode and a source electrode of the thin-film transistor section, to remove the impurity-doped semiconductor film and the upper conductor film from the pixel electrode, and to remove the lower conductor film from the pixel electrode section.
Claim 22
Independent Claim
182 words
A method of manufacturing an active matrix panel having at least a thin-film transistor section and a pixel electrode section, comprising: a first step for accumulating a transparent conductor film on a glass substrate and forming a lower conductor film on the transparent conductor film, and photoetching so as to form a gate electrode of the thin-film transistor section and a pixel electrode of the pixel electrode section; a second step for accumulating a gate insulator film, an amorphous silicon film, and a protective film in this order, and photoetching the protective film so as to form a protective layer; a third step for removing the amorphous silicon film and the gate insulator film from the pixel electrode section; and a fourth step for accumulating an impurity-doped semiconductor film and an upper conductor film in this order, and photoetching so as to form a drain electrode and a source electrode of the thin-film transistor section, to remove the impurity-doped semiconductor film and the upper conductor film from the pixel electrode, and to remove the lower conductor film from the pixel electrode section.
Claim 23
Dependent Claim
50 words
An active matrix panel manufacturing method according to claim 1, wherein one of said source electrode and said drain electrode is formed to extend over a part of the gate insulating film extending to a position on the pixel electrode, and to come into electrical contact with said pixel electrode.
Claim 24
Dependent Claim
50 words
An active matrix panel manufacturing method according to claim 2, wherein one of said source electrode and said drain electrode is formed to extend over a part of the gate insulating film extending to a position on the pixel electrode, and to come into electrical contact with said pixel electrode.
Claim 25
Dependent Claim
40 words
An active matrix panel manufacturing method according to claim 3, wherein one of said source electrode and said drain electrode is formed to extend over a part of the gate insulating film extending to a position on the pixel electrode.
Claim 26
Dependent Claim
32 words
A method of manufacturing an active matrix panel according to claim 12, wherein the gate insulator, formed by photoetching the insulator film, is formed so as to extend on the pixel electrode.
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