Patent US5030295A successfully refreshed from Google Patents.
US5030295A
Expired / Lapsed
US
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Radiation resistant passivation of silicon solar cells
Assignee: Electric Power Research Institute
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Filing: 1990-02-12
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Granted: 1991-07-09
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Expires: 2010-02-12
Abstract
Abstract The interface of a silicon oxide passivation layer and a silicon substrate in a silicon solar cell is stabilized by covering the silicon oxide passivation layer with a layer of undoped or phosphorus doped polycrystalline silicon. A second layer of silicon oxide is formed by deposition on the surface of the phosphorus doped polycrystalline and enhances the anti-reflection characteristics of the composite structure.
Inventors
- 👤 Richard M. Swanson
- 👤 Jon-Yiew Gan
- 👤 Peter E. Gruenbaum
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:44
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/11; H10F77/00; H10F77/30; H10F77/306; H10F77/311; H10F77/315; H10F77/80; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S257/00; Y10S257/906; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
78 words
A silicon solar cell having improved stability when exposed to concentrated solar radiation, comprising: a body of silicon material having a major surface for receiving radiation, a plurality of p and n conductivity regions in said body for collecting electrons and holes created by impinging radiation, and a passivation layer on said major surface including a first layer of silicon oxide in contact with said body and a polycrystalline silicon layer on said first layer of silicon oxide.
Claim 2
Dependent Claim
78 words
A silicon solar cell having improved stability when exposed to concentrated solar radiation, comprising: a body of silicon material having a major surface for receiving radiation, a plurality of p and n conductivity regions in said body for collecting electrons and holes created by impinging radiation, and a passivation layer on said major surface including a first layer of silicon oxide in contact with said body and a polycrystalline silicon layer on said first layer of silicon oxide.
Claim 3
Dependent Claim
29 words
The silicon solar cell as defined by claim 1 wherein the thickness of said polycrystalline silicon layer is greater than the thickness of said first layer of silicon oxide.
Claim 4
Dependent Claim
26 words
The silicon solar cell as defined by claim 2 and further including a second layer of silicon oxide on the surface of said polycrystalline silicon layer.
Claim 5
Dependent Claim
55 words
The silicon solar cell as defined by claim 3 wherein the thickness of said first silicon oxide layer is on the order of 50 Angstroms, the thickness of said polycrystalline silicon layer is on the order of 300 Angstroms, and the thickness of said second silicon oxide layer is on the order of 1200 Angstroms.
Claim 6
Dependent Claim
35 words
The silicon solar cell as defined in claim 3 wherein said first silicon oxide layer is thermally grown, said polycrystalline silicon layer is vapor deposited, and said second layer of silicon oxide is vapor deposited.
Claim 7
Dependent Claim
18 words
The silicon solar cell as defined in claim 5 wherein said polycrystalline silicon layer is doped with phosphorus.
Claim 8
Dependent Claim
26 words
The silicon solar cell as defined in claim 6 wherein the dopant concentration of phosphorus is on the order of 3×10 19 atoms per cubic centimeter.
Claim 9
Independent Claim
46 words
A method of stabilizing a silicon oxide/silicon interface in a silicon solar cell comprising the steps of forming a doped polycrystalline silicon layer on said layer of silicon oxide, and forming a layer of silicon oxide material on the surface of said doped polycrystalline silicon layer.
Claim 10
Independent Claim
46 words
A method of stabilizing a silicon oxide/silicon interface in a silicon solar cell comprising the steps of forming a doped polycrystalline silicon layer on said layer of silicon oxide, and forming a layer of silicon oxide material on the surface of said doped polycrystalline silicon layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-08 | 1995-01-07 | 1995-07-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-08 | 1999-01-07 | 1999-07-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-08 | 2003-01-07 | 2003-07-09 | $7700.00 | Window Closed / Lapsed |