US4642414A
Expired / Lapsed
US
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Solar cell
Assignee: Telefunken Systemtechnik AG
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Filing: 1985-05-16
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Granted: 1987-02-10
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Expires: 2005-05-16
Abstract
Abstract The invention relates to a solar cell, wherein, in order to increase the efficiency, an amorphous or microcrystalline silicon layer is disposed on the side facing the incident light, thereby enabling the surface recombination speed to be reduced. In a preferred embodiment, this silicon layer is doped and is therefore additionally available for charge carrier transport. High doping effects are thus avoided in the thin surface zone of the semiconductor body.
Inventors
- 👤 Klaus-Dieter Rasch
- 👤 Gerhard Strobl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:33
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/12; H10F77/00; H10F77/20; H10F77/206; H10F77/211; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
85 words
Solar cell, comprising: a semiconductor body consisting of a monocrystalline or polycrystalline semiconductor material and containing a pn-junction formed between a thin front surface zone of said semiconductor body which is of one conduction type and the remainder of said semiconductor body which is of the other conduction type; a front surface metallization; a rear surface contact; a layer for reducing front surface reflection overlying said front surface metallization; and an amorphous or microcrystalline silicon layer arranged underneath said layer for reducing front surface reflection.
Claim 2
Dependent Claim
85 words
Solar cell, comprising: a semiconductor body consisting of a monocrystalline or polycrystalline semiconductor material and containing a pn-junction formed between a thin front surface zone of said semiconductor body which is of one conduction type and the remainder of said semiconductor body which is of the other conduction type; a front surface metallization; a rear surface contact; a layer for reducing front surface reflection overlying said front surface metallization; and an amorphous or microcrystalline silicon layer arranged underneath said layer for reducing front surface reflection.
Claim 3
Dependent Claim
28 words
Solar cell according to claim 1, wherein an extremely thin layer of silicon dioxide is arranged directly underneath the front surface metallization and above the front surface zone.
Claim 4
Dependent Claim
32 words
Solar cell according to claim 2, wherein the amorphous or microcrystalline silicon layer covers the surface of the front surface metallization and the surface of the extremely thin layer of silicon dioxide.
Claim 5
Dependent Claim
28 words
Solar cell according to claim 2, wherein said amorphous or microcrystalline silicon layer is arranged between the extremely thin layer of silicon dioxide and the front surface zone.
Claim 6
Dependent Claim
15 words
Solar cell according to claim 1, wherein said amorphous or microcrystalline silicon layer is doped.
Claim 7
Dependent Claim
34 words
Solar cell according to claim 5, wherein materials of the third and fifth groups of the periodic system of elements are used for p- and n-doping respectively of the amorphous or microcrystalline silicon layer.
Claim 8
Dependent Claim
21 words
Solar cell according to claim 5, wherein the thin a front surface zone has a layer thickness of approximately 0.25 μm.
Claim 9
Dependent Claim
17 words
Solar cell according to claim 1, wherein said semiconductor body consists of doped silicon or gallium aresenide.
Claim 10
Dependent Claim
24 words
Solar cell according to claim 8, wherein said semiconductor body consists of gallium arsenide and is disposed on a substrate of GaAs or Ge.
Claim 11
Dependent Claim
36 words
Solar cell according to claim 1, wherein said layer for reducing reflection consists of titanium oxide, silicon monoxide, silicon dioxide, tantalum oxide, niobium oxide, aluminum oxide, or a single or multiple layer combination of these materials.
Claim 12
Dependent Claim
43 words
Solar cell according to claim 1, wherein said front surface metallization underneath said layer for reducing front surface reflection has a comb structure or a double comb structure and both it and said rear side contact consist of aluminum, silver, nickel, or copper.
Claim 13
Dependent Claim
52 words
Solar cell according to claim 1, wherein the valences of said amorphous or microcrystalline silicon layer are saturated by treatment with hydrogen, an optical window of approximately 3 eV band gap energy is provided by the introduction of carbon, and the conductivity of this layer is determined by the addition of phosphorous.
Claim 14
Dependent Claim
32 words
Solar cell according to claim 1, wherein said amorphous or microcrystalline silicon layer is produced by a glow discharge of CVD (chemical vapor deposition) process or is applied by sputtering or evaporation.
Claim 15
Dependent Claim
31 words
Solar cell according to claim 1, wherein said layer for reducing front surface reflection is produced thermally, by immersion, by a CVD process, or is applied by evaporation, centrifuging, or spraying.
Claim 16
Dependent Claim
15 words
Solar cell according to claim 1, wherein said amorphous or microcrystalline silicon layer is undoped.
Claim 17
Dependent Claim
19 words
Solar cell according to claim 15, wherein said thin surface zone has a layer thickness of approximately 0.5 μm.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-02-09 | 1990-08-11 | 1991-02-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-09 | 1994-08-11 | 1995-02-10 | $3760.00 | Window Closed / Lapsed |
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