Patent US5028557A successfully refreshed from Google Patents.
US5028557A
Expired / Lapsed
US
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Method of making a reverse self-aligned BIMOS transistor integrated circuit
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1990-08-27
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Granted: 1991-07-02
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Expires: 2010-08-27
Abstract
Abstract A method of forming self-aligned transistors wherein both bipolar and field effect transistors are formed in the same Integrated Circuit simultaneously is described. A heavily doped conductive layer of one conductivity type is formed upon a monocrystalline semiconductor substrate of the opposite conductivity type to that of the one type. The conductive layer may be typically polycrystalline silicon. An insulator layer is formed upon the surface of the conductive layer. Openings with substantially vertical sidewalls are formed through the conductive layer to the semiconductor substrate in the locations of the first element, the emitter for the bipolar and gate for the MOSFET, of the transistors to be formed. The structure is heated to form the heavily doped portions of the second element of said transistors of the one conductivity type by outdiffusing from the conductive layer. The second element is the base where the bipolar transistor is being formed and the source/drain where the field effect transistor is being formed. A uniform thickness conformal insulating layer is then deposited on the insulator layer over the conductive layer and oxidized substrate and preferentially removing the insulating layer from the horizontal surfaces and leaving a sidewall insulating layer upon the substantially vertical sidewalls. The integrated circuit is completed and the appropriate electrical contacts are made to the transistors of the IC.
Inventors
- 👤 Nun-Sian Tsai
- 👤 Cliff Y. Tsai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:13
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0273; H10D10/00; H10D10/01; H10D10/051; H10D30/0223; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D84/00; H10D84/01; H10D84/0107; H10D84/0109; H10D84/02; H10D84/03; H10D84/038; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S148/00; Y10S148/009
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
239 words
The method of forming self-aligned field effect and bipolar transistors comprising: forming a heavily doped conductive layer of one conductivity type upon a monocrystalline semiconductor substrate of the opposite conductivity type to said one type; forming an insulator layer upon the surface of said conductive layer; forming openings with substantially vertical sidewalls through said conductive layer to said semiconductor substrate in at least the locations of first elements of said field effect transistors; heating the structure to form the heavily doped portions of second elements of said transistors of said one conductivity type by outdiffusing from said conductive layer; depositing a uniform thickness conformal insulating layer on said insulator layer over said conductive layer, the sidewalls of said opening and the substrate and then preferentially removing said insulating layer from the horizontal surfaces and leaving a sidewall insulating layer upon said substantially vertical sidewalls; said bipolar and MOS field effect transistors are located in different regions on said integrated circuit; said first elements are the emitters in the bipolar transistor regions, and the gate and channel in the MOS field effect regions; said second elements are the bases in bipolar regions and the sources/drains in the MOS field effect transistor regions; forming said gate and channel structures; forming said emitters and forming collectors where appropriate in said bipolar regions; and making electrical contacts to the elements of the said bipolar and field effect transistors to form said integrated circuit.
Claim 2
Independent Claim
239 words
The method of forming self-aligned field effect and bipolar transistors comprising: forming a heavily doped conductive layer of one conductivity type upon a monocrystalline semiconductor substrate of the opposite conductivity type to said one type; forming an insulator layer upon the surface of said conductive layer; forming openings with substantially vertical sidewalls through said conductive layer to said semiconductor substrate in at least the locations of first elements of said field effect transistors; heating the structure to form the heavily doped portions of second elements of said transistors of said one conductivity type by outdiffusing from said conductive layer; depositing a uniform thickness conformal insulating layer on said insulator layer over said conductive layer, the sidewalls of said opening and the substrate and then preferentially removing said insulating layer from the horizontal surfaces and leaving a sidewall insulating layer upon said substantially vertical sidewalls; said bipolar and MOS field effect transistors are located in different regions on said integrated circuit; said first elements are the emitters in the bipolar transistor regions, and the gate and channel in the MOS field effect regions; said second elements are the bases in bipolar regions and the sources/drains in the MOS field effect transistor regions; forming said gate and channel structures; forming said emitters and forming collectors where appropriate in said bipolar regions; and making electrical contacts to the elements of the said bipolar and field effect transistors to form said integrated circuit.
Claim 3
Dependent Claim
40 words
The method of claim 1 wherein the conductive layer is polycrystalline silicon, the semiconductor substrate is silicon, and said polycrystalline silicon layer is N+ type conductivity imparting impurity and is doped by a phosphorous ion implantation process after its deposition.
Claim 4
Dependent Claim
21 words
The method of claim 2 wherein the said polycrystalline silicon conductive layer includes a top portion of a refractory metal silicide.
Claim 5
Dependent Claim
50 words
The method of claim 2 and further comprising a second polycrystalline silicon layer which is patterned and makes contacts to the gate electrodes, emitter and collector of said self aligned transistors; and a next level patterned conductor which completes said making contacts to the elements of said integrated circuit step.
Claim 6
Independent Claim
279 words
The method of forming self aligned bipolar and MOS field effect transistors in an integrated circuit comprising: forming a heavily doped conductive layer of one conductivity type upon a monocrystalline semiconductor substrate of the opposite conductivity type to said one type; forming an insulator layer upon the surface of said conductive layer; forming openings with substantially vertical sidewalls through said conductive layer to said semiconductor substrate in at least the locations of a first element of said transistors; heating the structure to form the heavily doped portions of a second element of said transistors of said one conductivity type by outdiffusing from said conductive layer; oxidizing the exposed said substrate and sidewalls of the said conductive layer until the desired low doped portion of said heavily doped portions of the second element of said transistor has been formed under the oxidized semiconductor substrate; depositing a uniform thickness conformal insulating layer on said insulator layer over said conductive layer and the oxidized substrate and preferentially removing said insulating layer from the horizontal surfaces and leaving a sidewall insulating layer upon said substantially vertical sidewalls; said bipolar and MOS field effect transistors are located in different regions on said integrated circuit; said first elements are the emitters in the bipolar transistor regions, and the gate and channel in the MOS field effect regions; said second elements are the bases in the bipolar regions and the sources/drains in the MOS field effect transistor regions; forming said gate and channel structures; forming said emitters and forming collectors where appropriate in said bipolar regions; and making electrical contacts to the elements of the said bipolar and field effect transistors to form said integrated circuit.
Claim 7
Independent Claim
279 words
The method of forming self aligned bipolar and MOS field effect transistors in an integrated circuit comprising: forming a heavily doped conductive layer of one conductivity type upon a monocrystalline semiconductor substrate of the opposite conductivity type to said one type; forming an insulator layer upon the surface of said conductive layer; forming openings with substantially vertical sidewalls through said conductive layer to said semiconductor substrate in at least the locations of a first element of said transistors; heating the structure to form the heavily doped portions of a second element of said transistors of said one conductivity type by outdiffusing from said conductive layer; oxidizing the exposed said substrate and sidewalls of the said conductive layer until the desired low doped portion of said heavily doped portions of the second element of said transistor has been formed under the oxidized semiconductor substrate; depositing a uniform thickness conformal insulating layer on said insulator layer over said conductive layer and the oxidized substrate and preferentially removing said insulating layer from the horizontal surfaces and leaving a sidewall insulating layer upon said substantially vertical sidewalls; said bipolar and MOS field effect transistors are located in different regions on said integrated circuit; said first elements are the emitters in the bipolar transistor regions, and the gate and channel in the MOS field effect regions; said second elements are the bases in the bipolar regions and the sources/drains in the MOS field effect transistor regions; forming said gate and channel structures; forming said emitters and forming collectors where appropriate in said bipolar regions; and making electrical contacts to the elements of the said bipolar and field effect transistors to form said integrated circuit.
Claim 8
Dependent Claim
40 words
The method of claim 5 wherein the conductive layer is polycrystalline silicon, the semiconductor substrate is silicon, and said polycrystalline silicon layer is N+ type conductivity imparting impurity and is doped by a phosphorous ion implantation process after its deposition.
Claim 9
Dependent Claim
98 words
The method of claim 5 wherein said low doped portions are N-; said completing the elements of the field effect transistor include the formation of the gate dielectric between the sources/drains which were formed from the outdiffusion from the said heavily doped conductive layer, formation of gate electrode over said gate dielectric; and the formation of the bipolar emitter and collector associated with the base regions that were formed from the outdiffusion from the said heavily doped conductive layer; and electrical connections to the various elements of said bipolar and field effect transistors to form the integrated circuit.
Claim 10
Dependent Claim
79 words
The method of claim 5 wherein substantially the vertical sidewalled openings are made to the planned collector regions in the said substrate before depositing the said uniform thickness conformal insulating layer so that said sidewall insulating layers are formed on the vertical sidewalls of the planned collector openings at the same time that they are formed at said emitter regions and the collector P region is formed simultaneously with the formation of the emitter P region by ion implantation.
Claim 11
Dependent Claim
38 words
The method of claim 5 wherein said field effect transistors are N channel, the bipolar transistors are PNP and an N- ion implantation is made in the emitter region of said bipolar transistors under the P+ emitter region.
Claim 12
Dependent Claim
33 words
The method of claim 5 wherein said field effect transistors are CMOS, said bipolar transistors are PNP and an N- ion implantation is made below the P+ emitter region in said bipolar transistors.
Claim 13
Dependent Claim
41 words
The method of claim 5 wherein an intrinsic base region is formed through the opening that said emitter is formed prior to the formation of said emitter, with an implant dose between about 1×10 13 to 1×10 14 atoms/cm 3 .
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-07-01 | 1994-12-31 | 1995-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-01 | 1998-12-31 | 1999-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-01 | 2002-12-31 | 2003-07-02 | $7700.00 | Window Closed / Lapsed |