Patent US5027187A successfully refreshed from Google Patents.
US5027187A
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US
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Polycrystalline silicon ohmic contacts to group III-arsenide compound semiconductors
Assignee: Harris Corp
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Filing: 1990-11-06
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Granted: 1991-06-25
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Expires: 2010-11-06
Abstract
Abstract A polycrystalline silicon layer forms an Ohmic contact to a group III-arsenide compound semiconductor substrate by heating the substrate. The polysilicon contact out-diffuses silicon into the substrate to form an N++ region.
Inventors
- 👤 William E. O'Mara, Jr.
- 👤 Gregory A. Schrantz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 08:31
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10D64/60; H10D64/62; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/17; H10P32/174; H10D62/00; H10D62/80; H10D62/85
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
64 words
A contact structure for group III-arsenide substrate comprising: a group III-arsenide substrate having a first region of a first impurity concentration; a contact region in said first region having silicon impurities of a greater impurity concentration than said first impurity concentration; and a polycrystalline silicon contact on a surface of said first region of said substrate forming an ohmic contact with said contact region.
Claim 2
Dependent Claim
64 words
A contact structure for group III-arsenide substrate comprising: a group III-arsenide substrate having a first region of a first impurity concentration; a contact region in said first region having silicon impurities of a greater impurity concentration than said first impurity concentration; and a polycrystalline silicon contact on a surface of said first region of said substrate forming an ohmic contact with said contact region.
Claim 3
Dependent Claim
17 words
A contact structure according to claim 1, wherein said first region is of an N conductivity type.
Claim 4
Dependent Claim
17 words
A contact structure according to claim 1, wherein said first region is of a P conductivity type.
Claim 5
Dependent Claim
35 words
A contact structure according to claim 1 wherein said group III-arsenide substrate is selected from the group of binary or ternary compounds including gallium arsenide, aluminum gallium arsenide, gallium indium arsenide, and aluminum indium arsenide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-06-24 | 1994-12-24 | 1995-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-24 | 1998-12-24 | 1999-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-24 | 2002-12-24 | 2003-06-25 | $7700.00 | Window Closed / Lapsed |