Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
82 words
A method for the production of a semiconductor device comprising a step to grow a thermal strain absorbing Layer on at Least a portion of the top surface of a semiconductor substrate, the portion being an area which is not an area which becomes an isolation area, a step to produce at Least one groove along said area which becomes an isolation area, a step to inlay an insulator in said at Least one groove, and a step to anneal said insulator.
Claim 2
Independent Claim
82 words
A method for the production of a semiconductor device comprising a step to grow a thermal strain absorbing Layer on at Least a portion of the top surface of a semiconductor substrate, the portion being an area which is not an area which becomes an isolation area, a step to produce at Least one groove along said area which becomes an isolation area, a step to inlay an insulator in said at Least one groove, and a step to anneal said insulator.
Claim 3
Dependent Claim
42 words
A method for the production of a semiconductor device in accordance with claim 1, wherein the material of said thermal strain absorbing Layer is a material selected from the group including poLycrystaLLine silicon, molybdenum silicide, tungsten siLicide, titanium silicide and tantalum silicide.
Claim 4
Dependent Claim
30 words
A method for the production of a semiconductor device in accordance with claim 1, wherein said insulator is selected from the group including silicon oxide, silicon nitride and aluminium oxide.
Claim 5
Dependent Claim
33 words
A method for the production of a semiconductor device in accordance with claim 1, wherein the material of said semiconductor substrate is a material selected from the group including silicon, gallium-arsenic and indium-phosphorus.
Claim 6
Dependent Claim
54 words
A method for the production of a semiconductor device in accordance with claim 1, 2, 3 or 4, further comprising a step to produce a metal Layer on said thermal strain absorbing Layer and on said insulator, and a step to pattern said metal Layer to a shape corresponding to electrodes and metal wires.
Claim 7
Dependent Claim
40 words
A method for the production of a semiconductor device in accordance with claim 5, wherein the material of said metal Layer is a material selected from the group including molybdenum silicide, tungsten silicide, titanium silicide, tantalum silicide and polycrystalline silicon.