Patent US4230272A successfully refreshed from Google Patents.
Patent US5026574A successfully refreshed from Google Patents.
US5026574A
Expired / Lapsed
US
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Chemical vapor deposition process for depositing large-grain polysilicon films
Assignee: The General Electric Company PLC
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Filing: 1989-01-25
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Granted: 1991-06-25
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Expires: 2009-01-25
Abstract
Abstract A deposition process includes the steps of heating a substrate, and passing silane gas over the substrate such that the heated substrate causes decomposition of the silane gas thereby to cause deposition of polysilicon film on the substrate. The temperature of the substrate and the pressure of the silane gas are controlled so as to increase the grain size of the deposited films.
Inventors
- 👤 Nikolaos A. Economu
- 👤 Douglas B. Meakin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 08:39
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45561; C03; C03C; C03C17/00; C03C17/22; C23C16/22; C23C16/24; C23C16/45557; C03C2217/00; C03C2217/20; C03C2217/28; C03C2217/282; C03C2218/00; C03C2218/10; C03C2218/15; C03C2218/152
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
105 words
A process for depositing a polycrystalline silicon film on a substrate, comprising the steps of: (a) heating said substrate in a hot wall reactor to a temperature up to about 630° C; (b) passing silane gas at a deposition pressure up to about 1 Pascal over said substrate so that said heated substrate causes decomposition of said silane gas; and (c) maintaining the deposition pressure within a predetermined pressure range up to about 1 Pascal during passage of said silane gas; whereby a film of undoped polysilicon having a grain size of at least about 4000Å with substantially no twinning is deposited on said substrate.
Claim 2
Dependent Claim
105 words
A process for depositing a polycrystalline silicon film on a substrate, comprising the steps of: (a) heating said substrate in a hot wall reactor to a temperature up to about 630° C; (b) passing silane gas at a deposition pressure up to about 1 Pascal over said substrate so that said heated substrate causes decomposition of said silane gas; and (c) maintaining the deposition pressure within a predetermined pressure range up to about 1 Pascal during passage of said silane gas; whereby a film of undoped polysilicon having a grain size of at least about 4000Å with substantially no twinning is deposited on said substrate.
Claim 3
Dependent Claim
21 words
A process according to claim 1, wherein said temperature is in a range from about 580° C. to about 630° C.
Claim 4
Dependent Claim
21 words
A process according to claim 1, wherein said pressure is in a range from about 0.03 Pascal to about 1 Pascal.
Claim 5
Dependent Claim
17 words
A process according to claim 1, wherein said steps are simultaneouly performed on a plurality of substrates.
Claim 6
Dependent Claim
14 words
A process according to claim 1, wherein said silane gas is SiH 4 .
Claim 7
Dependent Claim
13 words
A process according to claim 1, wherein said substrate is a glass substrate.
Claim 8
Dependent Claim
99 words
A process for depositing a polycrystalline silicon film on a substrate, comprising the steps of: (a) heating said substrate to a temperature up to about 630° C.; (b) passing silane gas at a deposition pressure in a range from about 0.03 Pascal to about 1 Pascal over said substrate so that said heated substrate causes decomposition of said silane gas; and (c) maintaining the deposition pressure within said range during passage of said silane gas; whereby a film of undoped polysilicon having a grain size of at least about 4000Å with substantially no twinning is deposited on said substrate.
Claim 9
Dependent Claim
99 words
A process for depositing a polycrystalline silicon film on a substrate, comprising the steps of: (a) heating said substrate to a temperature up to about 630° C.; (b) passing silane gas at a deposition pressure in a range from about 0.03 Pascal to about 1 Pascal over said substrate so that said heated substrate causes decomposition of said silane gas; and (c) maintaining the deposition pressure within said range during passage of said silane gas; whereby a film of undoped polysilicon having a grain size of at least about 4000Å with substantially no twinning is deposited on said substrate.
References Cited (Backward Citations)
US3112997A
Cited
US3900597A
Cited
US4001762A
Cited
US4113551A
Cited
US4129463A
Cited
US4351856A
Cited
US4363828A
Cited
US4443488A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-06-24 | 1994-12-24 | 1995-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-24 | 1998-12-24 | 1999-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-24 | 2002-12-24 | 2003-06-25 | $7700.00 | Window Closed / Lapsed |