US4351856A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacturing the same
Assignee: Hitachi Ltd
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Filing: 1980-07-18
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Granted: 1982-09-28
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Expires: 2000-07-18
Abstract
Abstract A semiconductor device is disclosed wherein a polycrystalline film whose principal constituent is silicon is formed on an amorphous or polycrystalline substrate, the polycrystalline film having a carrier mobility of at least 1 cm 2 /V·sec, and wherein at least one active device is formed by employing the polycrystalline film as its material. A large-area or elongate active device can be provided. The polycrystalline film for such semiconductor device is formed by a method wherein the amorphous or polycrystalline substrate is mounted in a vacuum chamber and wherein the polycrystalline film whose principal constituent is silicon is evaporated on the substrate under the conditions that the pressure during the evaporation is below 1×10 -8 Torr and that the partial pressure of oxygen during the evaporation is below 1×10 -9 Torr.
Inventors
- 👤 Makoto Matsui
- 👤 Yasuhiro Shiraki
- 👤 Yoshifumi Katayama
- 👤 Toshihisa Tsukada
- 👤 Eiichi Maruyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 13:14
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D62/00; H10D62/40; H10D86/00; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/191; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/169; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
70 words
A method of manufacturing a semiconductor device comprising the steps of mounting an amorphous or polycrystalline substrate in a vacuum chamber, and evaporating a polycrystalline silicon film onto said substrate under conditions that the pressure during the evaporation is below 1×10 -8 Torr and that a partial pressure of oxygen during the evaporation is below 1×10 -9 Torr, and forming at least one semiconductor device employing said polycrystalline silicon film.
Claim 2
Independent Claim
70 words
A method of manufacturing a semiconductor device comprising the steps of mounting an amorphous or polycrystalline substrate in a vacuum chamber, and evaporating a polycrystalline silicon film onto said substrate under conditions that the pressure during the evaporation is below 1×10 -8 Torr and that a partial pressure of oxygen during the evaporation is below 1×10 -9 Torr, and forming at least one semiconductor device employing said polycrystalline silicon film.
Claim 3
Dependent Claim
29 words
A method of manufacturing a semiconductor device as defined in claim 1, wherein a substrate temperature during the evaporation of said polycrystalline silicon film is at least 400° C.
Claim 4
Dependent Claim
37 words
A method of manufacturing a semiconductor device as defined in claim 1, wherein an impurity selected from the group consisting of p-type impurity and n-type impurity is simultaneously evaporated onto said substrate with said polycrystalline silicon film.
Claim 5
Dependent Claim
24 words
A method of manufacturing a semiconductor device as defined in claim 1 or 2, wherein said substrate has a softening point below 820° C.
Claim 6
Dependent Claim
30 words
A method of manufacturing a semiconductor device as defined in claim 1 or 2, wherein the polycrystalline silicon film is evaporated onto said substrate at a rate of 1,000-10,000 A/hour.
Claim 7
Dependent Claim
57 words
A method of manufacturing a semiconductor device as defined in claim 1 or 2, wherein said at least one semiconductor device is formed by selectively forming an SiO 2 gate insulator layer on said polycrystalline silicon film, forming source and drain regions in said polycrystalline silicon film by ion implantation, and forming source, gate and drain electrodes.
Claim 8
Dependent Claim
25 words
A method of manufacturing a semiconductor device as defined in claim 6, wherein the SiO 2 gate insulator layer is formed by chemical vapor deposition.
Claim 9
Dependent Claim
122 words
A method of manufacturing a semiconductor device as defined in claim 1 or 2, wherein a conductive material is deposited on said substrate, said polycrystalline silicon film is evaporated to be directly in contact with said conductive material, said polycrystalline silicon film being of one conductivity type, a second polycrystalline silicon film of the opposite conductivity type to said one conductivity type is deposited directly on said polycrystalline silicon film, said second polycrystalline film being deposited by evaporation deposition under conditions that the pressure during the evaporation is below 1×10 -8 Torr and that a partial pressure of oxygen during the evaporation is below 1×10 -9 Torr, and a second conductive layer is formed directly in contact with said second polycrystalline film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-09-27 | 1986-03-29 | 1986-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-09-27 | 1990-03-29 | 1990-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-09-27 | 1994-03-29 | 1994-09-28 | $7700.00 | Window Closed / Lapsed |