Inverter switch with parallel free-wheel diodes

Claim 2

A module of components grouped physically close to each other, comprising a transistor, an antiparallel diode connected across said transistor, and a series diode connected in series with said transistor, the primary directions of conductance of said transistor and said series diode being in opposition.

Claim 3

A module as set forth in claim 1, and further including a junction connected between said transistor and said series diode and adapted to be connected to a load.

Claim 4

An associated pair of modules adapted to be connected in parallel across first and second power supply conductors, each of said modules comprising a transistor, a first diode and a second diode, said first and second diodes and said transistor each having a primary direction of conduction, said first diode being connected in antiparallel with said transistor, and said second diode being connected in series with said transistor such that the primary direction of conduction of said transistor is opposite the primary direction of conduction of said second diode, junction means between said transistor and said second diode, said junction means of said pair of modules being connected together and adapted to be connected to a load, said modules being adapted to be connected to said power supply conductors.

Claim 5

An associated pair of modules adapted to be connected in parallel across first and second power supply conductors, each of said modules comprising a transistor, a first diode and a second diode, said first and second diodes and said transistor each having a primary direction of conduction, said first diode being connected in antiparallel with said transistor, and said second diode being connected in series with said transistor such that the primary direction of conduction of said transistor is opposite the primary direction of conduction of said second diode, junction means between said transistor and said second diode, said junction means of said pair of modules being connected together and adapted to be connected to a load, said modules being adapted to be connected to said power supply conductors.

Claim 6

Apparatus as set forth in claim 3, wherein said transistor and said first and second diodes of each of said modules are grouped closely together to result in low parasitic inductance therebetween.

Claim 7

Apparatus as set forth in claim 3, and further including second and third associated pairs of modules which are substantially identical with said modules of said first-mentioned pair, said pairs of modules being interconnected to form a three-phase inverter.

Claim 8

Apparatus as set forth in claim 3, wherein said transistor of one of said modules is connected to conduct current from said first power supply conductor to said junction means, and said transistor of the other of said modules is connected to conduct current from said junction means to said second power supply conductor.

Claim 9

A phase circuit of an inverter adapted to be connected between first and second supply conductors, comprising first and second transistors connected in series and adapted to be connected across aid supply conductors, said transistors being connected for the same direction of primary conductance, first and second diodes connected in antiparallel with said first and second transistors, respectively, third and fourth diodes connected in antiparallel with said first and second transistors, respectively, and junction means connected to each of said transistors and adapted to be connected to a load, wherein said first transistor, said first diode and said fourth diode are grouped closely together in a first module, and said second transistor, said second diode and said third diode are grouped closely together in a second module.

Claim 10

A phase circuit of an inverter adapted to be connected between first and second supply conductors, comprising first and second transistors connected in series and adapted to be connected across aid supply conductors, said transistors being connected for the same direction of primary conductance, first and second diodes connected in antiparallel with said first and second transistors, respectively, third and fourth diodes connected in antiparallel with said first and second transistors, respectively, and junction means connected to each of said transistors and adapted to be connected to a load, wherein said first transistor, said first diode and said fourth diode are grouped closely together in a first module, and said second transistor, said second diode and said third diode are grouped closely together in a second module.