Patent US5025167A successfully refreshed from Google Patents.
US5025167A
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Ion implantation apparatus
Assignee: Mitsubishi Electric Corp
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Filing: 1990-06-06
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Granted: 1991-06-18
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Expires: 2010-06-06
Abstract
Abstract An ion implantation apparatus comprises an ion beam measuring device to measure and analyze the shape of a beam projected on a substrate for ion implantation and the quantity of current obtained by the ion beam, an analyzing slit member having an opening whose width is changeable, which is located in the ion beam track to extract only implantation ions, and a shaping slit member having an opening whose width is changeable, which is located behind the analyzing slit member to determine the shape of the beam to be projected on the substrate for ion implantation, wherein the widths of the openings of the analyzing slit member and the shaping slit member are changed on the basis of the shape of the beam and the quantity of current obtained as a result of the measurement by the ion beam measuring device.
Inventors
- 👤 Soichiro Okuda
- 👤 Tetsuya Nakanishi
- 👤 Shigeo Sasaki
- 👤 Kazuhiko Noguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:06
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/02; H01J37/04; H01J37/09; H01J37/30; H01J37/304; H01J37/317; H01J37/3171
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
141 words
An ion implantation apparatus which comprises: an ion beam measuring device to measure and analyze the shape of a beam projected on a substrate for ion implantation and the quantity of current obtained by the ion beam, an analyzing slit member having an opening whose width is changeable, which is located in the ion beam track to extract only implantation ions, and a shaping slit member having an opening whose width is changeable, which is located behind the analyzing slit member to determine the shape of beam to be projected on the substrate for ion implantation, wherein the widths of the openings of the analyzing slit member and the shaping slit member are changed on the basis of the shape of the beam and the quantity of current obtained as a result of the measurement by the ion beam measuring device.
Claim 2
Dependent Claim
141 words
An ion implantation apparatus which comprises: an ion beam measuring device to measure and analyze the shape of a beam projected on a substrate for ion implantation and the quantity of current obtained by the ion beam, an analyzing slit member having an opening whose width is changeable, which is located in the ion beam track to extract only implantation ions, and a shaping slit member having an opening whose width is changeable, which is located behind the analyzing slit member to determine the shape of beam to be projected on the substrate for ion implantation, wherein the widths of the openings of the analyzing slit member and the shaping slit member are changed on the basis of the shape of the beam and the quantity of current obtained as a result of the measurement by the ion beam measuring device.
Claim 3
Dependent Claim
45 words
The ion implantation apparatus according to claim 1, which further comprises driving units for changing the widths of the openings of the analyzing slit member and the shaping slit member, and a control unit for controlling the width of the openings of the slit members.
Claim 4
Dependent Claim
20 words
The ion implantation apparatus according to claim 2, wherein said control unit is provided for each of the driving units.
Claim 5
Dependent Claim
67 words
An ion implantation apparatus which comprises: an ion generating device, a two-pole electromagnetic device placed facing the ion generating device to deflect ions emitted from the ion generating device, an ion selecting device placed at the side of emission of the electromagnetic device to select ions, a material positioning device for positioning a material for ion implantation, and a moving device for moving the ion selecting device.
Claim 6
Dependent Claim
67 words
An ion implantation apparatus which comprises: an ion generating device, a two-pole electromagnetic device placed facing the ion generating device to deflect ions emitted from the ion generating device, an ion selecting device placed at the side of emission of the electromagnetic device to select ions, a material positioning device for positioning a material for ion implantation, and a moving device for moving the ion selecting device.
Claim 7
Dependent Claim
23 words
The ion implantation apparatus according to claim 4, wherein the ion selecting device comprises an analyzing slit member and a shaping slit member.
Claim 8
Dependent Claim
30 words
The ion implantation apparatus according to claim 5, wherein the analyzing slit member and the shaping slit member are moved in the direction of beam axis by each driving device.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-06-17 | 1994-12-17 | 1995-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-17 | 1998-12-17 | 1999-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-17 | 2002-12-17 | 2003-06-18 | $7700.00 | Window Closed / Lapsed |