US5021854A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon avalanche photodiode array
Assignee: Advanced Photonix Inc
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Filing: 1990-03-26
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Granted: 1991-06-04
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Expires: 2010-03-26
Abstract
Abstract A wafer of neutron transmutation doped silicon having a pn junction between extended opposite surfaces is formed with bevelled edges. A plurality of reverse biased signal contacts is disposed on one surface to provide an integrated array of avalanche photodiodes.
Inventors
- 👤 Gerald C. Huth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 13:15
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/225; H01; H01J; H01J31/00; H01J31/08; H01J31/26; H01J31/50; H01J31/505; H10F39/00; H10F39/10; H10F39/103; H10F39/12; H10F39/18; H10F77/00; H10F77/10; H10F77/12; H10F77/122; H10F77/1223; H10F77/14; H10F77/147; H10F77/95; H10F77/953; H10F77/957; H10P; H10P34/00; H10P34/20; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
152 words
An avalanche photodiode array comprising: a body of n-type silicon semiconductor material having phosphorus uniformly distributed therein obtained by neutron transmutation doping, whereby the resistivity of said body is about 30-50 ohm-cm, said resistivity throughout at least an active region of said body has a maximum variance of about 0.5%, said body further having a first body surface and a second body surface opposite to said first surface separated by edge surfaces, and a p-n junction between said first and second body surfaces, said second body surface comprising an entrance surface for receiving light image, said edge surfaces being contoured such that cross-sectional area of said body decreases from said first body surface to said second body surface, whereby premature avalanche breakdown is prevented; a plurality of signal contacts forming an array disposed on one of said first and second body surfaces; and electrical contact means for reverse biasing said signal contacts.
Claim 2
Dependent Claim
152 words
An avalanche photodiode array comprising: a body of n-type silicon semiconductor material having phosphorus uniformly distributed therein obtained by neutron transmutation doping, whereby the resistivity of said body is about 30-50 ohm-cm, said resistivity throughout at least an active region of said body has a maximum variance of about 0.5%, said body further having a first body surface and a second body surface opposite to said first surface separated by edge surfaces, and a p-n junction between said first and second body surfaces, said second body surface comprising an entrance surface for receiving light image, said edge surfaces being contoured such that cross-sectional area of said body decreases from said first body surface to said second body surface, whereby premature avalanche breakdown is prevented; a plurality of signal contacts forming an array disposed on one of said first and second body surfaces; and electrical contact means for reverse biasing said signal contacts.
Claim 3
Dependent Claim
22 words
The photodiode array of claim 1 in which said signal contacts are non-injecting contacts defined by n+ regions in said n-type silicon.
Claim 4
Dependent Claim
24 words
The photodiode array of claim 2 including junctions cut through said silicon body and through said p-n junction, isolating individual photodiodes from each other.
Claim 5
Dependent Claim
22 words
The photodiode array of claim 1 including means for multiplexing signals obtained from said signal contacts, electrically associated with said signal contacts.
Claim 6
Dependent Claim
27 words
The photodiode array of claim 2 in combination with a semiconductor multiplexing chip formed with a plurality of non-injecting contact regions bump bonded to said signal contacts.
Claim 7
Dependent Claim
22 words
The photodiode of claim 4 in which said means for multiplexing signals comprises multiplexing components integrally formed on said first body surface.
Claim 8
Dependent Claim
42 words
The photodiode array of claim 1 in which said signal contacts comprise field emission tips and in which said field emission tips are in contact with phosphor plate means for generating a light image corresponding to radiation received at said entrance surface.
Claim 9
Dependent Claim
59 words
The photodiode array of claim 1 in combination with: photocathode means for receiving radiation and emitting photoelectrons; means for obtaining a vacuum between said photocathode means and the entrance surface of said array; and means for applying a voltage between said photocathode means and said photodiode array whereby said photoelectrons are accelerated across said vacuum onto said entrance surface.
Claim 10
Dependent Claim
20 words
The photodiode array of claim 1 constituted by four integral photodiodes arranged in quadrature array and defining a juncture therebetween.
Claim 11
Dependent Claim
37 words
The photodiode array of claim 9 in combination with means for applying a light beam to the juncture of said quadrature array, and means for generating a correcting signal when said light beam moves from said juncture.
Claim 12
Dependent Claim
22 words
The photodiode array of claim 3 constituted by four integral but isolated photodiodes arranged in quadrature array and defining a juncture therebetween.
Claim 13
Dependent Claim
37 words
The photodiode array of claim 11 in combination with means for applying a light beam to the juncture of said quadrature array, and means for generating a correcting signal when said light beam moves from said juncture.
Claim 14
Dependent Claim
22 words
The photodiode array of claim 1 in which said p-n junction is defined by a p+ layer adjacent said second body surface.
Claim 15
Dependent Claim
49 words
The photodiode array of claim 1 in which said p-n junction is defined by a p+ region adjacent said second body surface, an n+ region is defined adjacent said first body surface, and said plurality of signal contacts are non-injecting contacts defined by p++ regions in said p+ region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-06-03 | 1994-12-03 | 1995-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-03 | 1998-12-03 | 1999-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-03 | 2002-12-03 | 2003-06-04 | $7700.00 | Window Closed / Lapsed |