US4042454A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing homogeneously doped n-type Si monocrystals by thermal neutron radiation
Assignee: Siemens AG
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Filing: 1974-11-06
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Granted: 1977-08-16
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Expires: 1994-11-06
Abstract
Abstract Si monocrystals of the n-type are produced by zone melting polycrystalline Si rods under conditions sufficient to produce monocrystal rods, measuring the specific conductivity of such monocrystal rods and subjecting such monocrystal rods to a controlled radiation by thermal neutrons based on the measured conductivity to produce a desired degree of n-conductivity in the ultimately attained rods.
Inventors
- 👤 Ernst Haas
- 👤 Joachim Martin
- 👤 Konrad Reuschel
- 👤 Manfred Schnoeller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 13:37
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/20; C30B31/22; C30B13/00; H; H10; H10P; H10P34/00; H10P34/20; Y; Y10; Y10S; Y10S148/00; Y10S148/153; Y10S148/165
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
173 words
A method of producing a homogeneously n-doped Si rod having a specific resistivity greater than 30 ohm × cm wherein a Si rod is subjected to radiation by thermal neutrons and a nuclear reaction occurs within such rod in accordance with: Si.sup.30 (n, γ) Si.sup.31 .sup.β.sup.- P.sup.31 comprising: subjecting a polycrystalline Si rod having a specific resistivity of 550 ohm × cm, n-type to at least one crucible-free zone melting process in a suitably protective environment so as to free said rod of any donor material present therein; converting the so-attained polycrystalline rod into a monocrystalline state in a conventional manner; measuring the specific resistivity of the so-produced monocrystalline rod; and subjecting said monocrystalline rod to controlled radiation by thermal neutrons in accordance with the measured resistivity, the intensity of such controlled radiation comprising 8 × 10 13 neutrons/cm 2 × sec. and the radiation duration comprising about one hour whereby an n-doped Si rod having a concentration of about 4 × 10 13 atoms of phosphorous/cm 3 of silicon therein is produced.
Claim 2
Independent Claim
173 words
A method of producing a homogeneously n-doped Si rod having a specific resistivity greater than 30 ohm × cm wherein a Si rod is subjected to radiation by thermal neutrons and a nuclear reaction occurs within such rod in accordance with: Si.sup.30 (n, γ) Si.sup.31 .sup.β.sup.- P.sup.31 comprising: subjecting a polycrystalline Si rod having a specific resistivity of 550 ohm × cm, n-type to at least one crucible-free zone melting process in a suitably protective environment so as to free said rod of any donor material present therein; converting the so-attained polycrystalline rod into a monocrystalline state in a conventional manner; measuring the specific resistivity of the so-produced monocrystalline rod; and subjecting said monocrystalline rod to controlled radiation by thermal neutrons in accordance with the measured resistivity, the intensity of such controlled radiation comprising 8 × 10 13 neutrons/cm 2 × sec. and the radiation duration comprising about one hour whereby an n-doped Si rod having a concentration of about 4 × 10 13 atoms of phosphorous/cm 3 of silicon therein is produced.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-08-15 | 1981-02-14 | 1981-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-08-15 | 1985-02-14 | 1985-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-08-15 | 1989-02-14 | 1989-08-16 | $7700.00 | Window Closed / Lapsed |