Manufacture of avalanche-photo-diode

Abstract

Abstract PURPOSE: To obtain planar type avalanche-photo-diode with high reliablity in excellent yield, by exposing a surface of a p-type epitaxial layer by selectively etching removing an insulating film through a window by means of an opening portion for transmitting light. CONSTITUTION: A P-type epitaxial layer 2 is formed on one side main surface of an N-type Si substrate 1, and an insulating film with the first ringed window 14 is made up on a surface of the layer 2. Here, an N-type diffusion layer is built up by diffusing the N-type impurities of an N-type porous layer 16 to the layer 2 contacting with the impurities, a photoresist film is formed on the insulating film while containing the inside of the window 14 and a surface of the insulating film is exposed to a film 18 on a fixed portion of the layer 2 surrounded by the layer 16 by means of the second film 19. An opening portion 9 for transmitting light is mounted which exposes the surface of the layer 2 by selectively etching removing the insulating film through the window 19. Thus, this planar type avalanche-photo-diode APD with high reliability can be manufactured in excellent yield. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Seiichi Nagai
• 👤 Kazuhisa Takahashi
• 👤 Saburo Takamiya
• 👤 Wataru Suzaki

Bibliographic Details