Patent US5017265A successfully refreshed from Google Patents.
US5017265A
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US
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Method for removing residual material from a cavity during the manufacture of a semiconductor device by utilizing plasma scattering
Assignee: SK Hynix Inc
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Filing: 1989-12-20
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Granted: 1991-05-21
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Expires: 2009-12-20
Abstract
Abstract A method for removing residual material which remains in a cavity after an anisotropic etching process in the manufacture of a partially completed multi-layer semiconductor device, where the cavity is in contact with at least one anisotropic etch-stop layer and is accessible by an etchable layer is disclosed. A plasma etching apparatus which includes a chamber is utilized. The etchable layer is first etched by anisotropic etching in the chamber under predetermined conditions in the plasma etching apparatus until a top of the etch-stop layer is exposed. A plasma scattering etching process is then performed to remove the residual material in the cavity by changing the predetermined conditions of the anisotropic etching process to produce plasma scattering, thereby removing the residual material from the cavity.
Inventors
- 👤 Hae S. Park
- 👤 Sang I. Kim
- 👤 Sea C. Kim
- 👤 Kye S. Park
- 👤 Jin G. Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:11
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283; H10P50/286; H10P50/287
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
143 words
A method for removing residual material which remains in a cavity after an anisotropic etching process in the manufacture of a partially completed multi-layer semiconductor device, the cavity being in contact with at least one anisotropic etch-stop layer and where the cavity is accessible by an etchable layer, said method comprising the steps of: providing a plasma etching apparatus having a chamber: etching the etchable layer by anisotropic etching utilizing the plasma etching apparatus under predetermined conditions in the chamber of the plasma etching apparatus until a top of the etch-stop layer is exposed; and, performing a plasma scattering etching process to remove the residual material in the cavity by changing the predetermined conditions of the anisotropic etching process to produce plasma scattering upon completion of the exposure of the top of the etch-stop layer, thereby removing the residual material from the cavity.
Claim 2
Independent Claim
143 words
A method for removing residual material which remains in a cavity after an anisotropic etching process in the manufacture of a partially completed multi-layer semiconductor device, the cavity being in contact with at least one anisotropic etch-stop layer and where the cavity is accessible by an etchable layer, said method comprising the steps of: providing a plasma etching apparatus having a chamber: etching the etchable layer by anisotropic etching utilizing the plasma etching apparatus under predetermined conditions in the chamber of the plasma etching apparatus until a top of the etch-stop layer is exposed; and, performing a plasma scattering etching process to remove the residual material in the cavity by changing the predetermined conditions of the anisotropic etching process to produce plasma scattering upon completion of the exposure of the top of the etch-stop layer, thereby removing the residual material from the cavity.
Claim 3
Dependent Claim
46 words
The method of claim 1 whrein the predetermined conditions of the anisotropic etching process utilizing plasma gas are: chamber pressure of 280 m Torr, chamber RF power supply of 250 watt and a chamber mixture of gases being in a ratio of 100:150 (CCL 4 :He).
Claim 4
Dependent Claim
57 words
The method of claim 1 wherein the predetermined conditions are changed to enable performance of the plasma scattering etching process by providing: a chamber pressure of 300 m Torr, a chamber RF power supply of 250 watt and a chamber mixture of gases being in a ratio of 100:150:6 (CCL 4 :SE 6 ), in the chamber.
Claim 5
Independent Claim
196 words
A method for removing residual material which remains in a cavity after an anisotropic etching process in the manufacture of a partially completed multi-layer semiconductor device, the cavity being in contact with at least one anisotropic etch-stop layer and where the cavity is accessible by an etchable layer, said method comprising: providing a plasma etching apparatus having a chamber; etching the etchable layer by anisotropic etching utilizing the plasma etching apparatus until a top of the etch-stop layer is exposed wherein the predetermined conditions in the chamber of the anisotropic etching process utilizing plasma gas are: chamber pressure of 280 m Torr, chamber RF power supply of 250 watt and a chamber mixture of gases being in a ratio of 100:150 (CCL 4 :He); and, performing a plasma scattering etching process to remove the residual material in the cavity by changing the predetermined conditions of the etching process to: a chamber pressure of 300 m Torr, a chamber RF power supply of 250 watt and a chamber mixture of gases being in a ratio of 100:150:6 (CCL 4 :He:SE 6 ) thereby producing the plasma scattering effect whereby the residual material is removed from the cavity.
Claim 6
Independent Claim
196 words
A method for removing residual material which remains in a cavity after an anisotropic etching process in the manufacture of a partially completed multi-layer semiconductor device, the cavity being in contact with at least one anisotropic etch-stop layer and where the cavity is accessible by an etchable layer, said method comprising: providing a plasma etching apparatus having a chamber; etching the etchable layer by anisotropic etching utilizing the plasma etching apparatus until a top of the etch-stop layer is exposed wherein the predetermined conditions in the chamber of the anisotropic etching process utilizing plasma gas are: chamber pressure of 280 m Torr, chamber RF power supply of 250 watt and a chamber mixture of gases being in a ratio of 100:150 (CCL 4 :He); and, performing a plasma scattering etching process to remove the residual material in the cavity by changing the predetermined conditions of the etching process to: a chamber pressure of 300 m Torr, a chamber RF power supply of 250 watt and a chamber mixture of gases being in a ratio of 100:150:6 (CCL 4 :He:SE 6 ) thereby producing the plasma scattering effect whereby the residual material is removed from the cavity.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-20 | 1994-11-19 | 1995-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-20 | 1998-11-19 | 1999-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-20 | 2002-11-19 | 2003-05-21 | $7700.00 | Window Closed / Lapsed |