Integrated photodetector with hysteresis

Claim 2

An integrated photodetector with hysteresis, comprising: a photodiode means for detecting the intensity of light; and optically controlled switch means switched on or off by the light, the photodiode means and the optically controlled switch means being integrated on a single chip, the optically controlled switch means connected in series to a power source and to the photodiode means at a connection point, the ON-level and OFF-level of the optically controlled switch means being determined by trigger level and holding current, respectively, thereof, to output one of low and high level signals from the connection point according to a comparison result between the intensity of the light and the trigger level/holding current.

Claim 3

The photodetector of claim 1, also including circuit means connected to the connection point for impedance conversion.

Claim 4

The photodetector of claim 1, wherein the optically controlled switch means includes PNP transistor means, NPN transistor means and first and second resistor means for connecting emitters and bases of the respective transistor means, the bases of the transistor means being connected to the collectors of the counterpart transistor means.

Claim 5

The photodetector of claim 3, wherein the trigger level and the holding current of the optically controlled switch means and adjusted by varying the resistances of the first and second resistors and the sensitivity of the photodiode means.

Claim 6

An integrated photodetector with hysteresis, comprising: photodiode means for detecting the intensity of light; and current source device means having hysteresis characteristics to output a first current value when a voltage applied from the photodiode means is lower than a predetermined voltage and a second current value when the applied voltage is higher than the predetermined voltage, the photodiode means and the current source device means being integrated on a single chip, the current source device means connected in series to a power source and to the photodiode means at a connection point, to output one of low and high level signals from the connection point according to whether the intensity of the light detected by the photodiode means becomes less or larger than a predetermined value.

Claim 7

An integrated photodetector with hysteresis, comprising: photodiode means for detecting the intensity of light; and current source device means having hysteresis characteristics to output a first current value when a voltage applied from the photodiode means is lower than a predetermined voltage and a second current value when the applied voltage is higher than the predetermined voltage, the photodiode means and the current source device means being integrated on a single chip, the current source device means connected in series to a power source and to the photodiode means at a connection point, to output one of low and high level signals from the connection point according to whether the intensity of the light detected by the photodiode means becomes less or larger than a predetermined value.

Claim 8

The photodetector of claim 5, also including circuit means connected to the connection point for impedence conversion.

Claim 9

The photodetector of claim 5, wherein the current source device means includes JFET means and MOS means connected in parallel with each other, the source and gate of the MOS means being connected, and wherein ON and OFF states of the MOS means are controlled by the intensity of the light detected by the photodiode means to output one of low and high level signals from the connection point.